| Project/Area Number |
18560333
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Shizuoka University |
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Principal Investigator |
INOUE Yoku Shizuoka University, Engineering, Associate professor (90324334)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIDA Akihiro Shizuoka University, Engineering, Professor (70183738)
MIMURA Hedenori Shizuoka University, Research Insititute of Electronics, Professor (90144055)
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| Project Period (FY) |
2006 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥270,000)
Fiscal Year 2007: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2006: ¥2,600,000 (Direct Cost: ¥2,600,000)
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| Keywords | UV light / nano-phosphor / GaN / nanowire / field electron emission device / CNT / ナノ蛍光 |
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| Research Abstract |
We studied new deep-UV light-emitting devices based on nitride semiconductor nanocrystals. We have proposed a new device structure that GaN nanocrystals emit light excited by electron beam from nanosized field electron emission device. The study has carried along with three themes of research, which are nano-phosphor development, development of nanosized field electron emission devices and the lump structure that combines the nano-phosphor and the field emitter. GaN nanocrystals were grown on sapphire substrate and emitted ultraviolet light through a sapphire substrate. We researched on GaN nanowire fabrication technology for GaN nanocrystal synthesis of large amounts of material and for the development of field-emission devices. lb clarify the V12 growth mechanisms of nanowire, detailed experiments were carried. We found that the nanowire morphology strongly depends on the surface Ga diffusion length. In addition, we conducted a study on the synthesis of carbon nanotubes (CNT) for the material of field emission device. We developed a new synthesis technology of ultra-long bulk growth of CNT employing iron chloride as a catalyst material. High-speed growth of 2-mm in 20 min has been achieved. This new one-step growth technology will contribute to the development of new CNT applications. These results indicate feasibility of electron impact UV light source based on GaN nanostructures.
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