| Project/Area Number |
18560356
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Osaka Electro-Communication University |
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Principal Investigator |
MATSUURA Hideharu Osaka Electro-Communication University, Faculty of Engineering, Professor (60278588)
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| Co-Investigator(Kenkyū-buntansha) |
TANIGUCHI Kazuo Osaka Electro-Communication University, Faculty of Engineering, Professor (50076832)
SUSAKI Wataru Osaka Electro-Communication University, Faculty of Engineering, Professor (00268294)
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| Project Period (FY) |
2006 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥4,010,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥510,000)
Fiscal Year 2007: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2006: ¥1,800,000 (Direct Cost: ¥1,800,000)
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| Keywords | X-ray detector / X-ray fluorescence / silicon drift detector / semi-insulating semiconductor / 4H-SiC / radiation-resistance |
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| Research Abstract |
1. Research and development of highly-sensitive silicon drift detector (SDD) for high-energy X-ray fluorescence
In order for SDD to detect high-energy X-ray fluorescence from a trace of pollutants such as Cd, the thickness of Si substrate for SDD required to be thicker than 1 mm. The Si substrate with resistivity higher than 5 kΩcm is necessary to deplete the whole Si substrate by an appropriate reverse bias voltage, but SDD with the Si substrate with resistivity higher than 5 kΩcm has not been materialized to date.
We have discussed the problem of how to materialize the SDD with the Si substrate with resistivity higher than 5 kΩcm, and have proposed a new structure of SDD using Si substrate with resistivity higher than 5 kΩcm.
2. Research of room-temperature-operating X-ray detector made of semi-insulating semiconductor
Deep levels in semiconductors degrade the performance of X-ray detector. Because the typical method (DLTS: deep level transient spectroscopy) for characterization of deep levels in low-resistivity semiconductors is not suitable for high-resistivity semiconductors and insulators, we have determined the densities and emission rates of deep levels in high-purity semi-insulating semiconductors such as 4H-SiC by discharge current transient spectroscopy (DCTS) that we have proposed. From the temperature dependence of each emission rate, moreover, the activation energy (i.e., energy level of each deep level) has been determined.
3. Study of radiation resistance of semiconductor for X-ray detector
Since these X-ray detectors are expected to be used in radiation environments, we have investigated the radiation resistance of semiconductors such as Si and SiC using Hall-effect measurements. The density of acceptors in p-type Si or p-type SiC is found to be decreased by irradiation of high-energy electrons. On the other hand, Si is found to be radiation-resistant more than SiC.
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