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LSI Test Technology for Evaluating Soft-Error-Rates in Combinational Logic Circuits

Research Project

Project/Area Number 18560359
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionJapan Aerospace Exploration Agency

Principal Investigator

KOBAYASHI Daisuke  Japan Aerospace Exploration Agency, Institute of Space and Astronautical Science, Assistant Professor (90415894)

Co-Investigator(Kenkyū-buntansha) HIROSE Kazuyuki  Institute of Space and Astronautical Science, 宇宙科学研究本部, Assistant Professor (00280553)
SAITO Hirobumi  Institute of Space and Astronautical Science, 宇宙科学研究本部, Professor (80150051)
Project Period (FY) 2006 – 2007
Project Status Completed (Fiscal Year 2007)
Budget Amount *help
¥3,660,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥360,000)
Fiscal Year 2007: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2006: ¥2,100,000 (Direct Cost: ¥2,100,000)
KeywordsSoft Errors / Single-Event Effects / Scan Designs / Design for Testability / Radiation / VLSIs / Combinational Circuits / SETs
Research Abstract

Very large scale integrations, VLSIs, exhibit transient errors called "soft errors" when exposed to radiation environments. As a result of aggressive miniaturization of transistors, the soft error is now becoming a serious failure source of logic VLSIs like CPUs. It is thus desired to evaluate experimentally soft-error rates of fabricated logic chips in irradiation tests. For the purpose, we have developed a new LSI test technology in this research project.
To evaluate soft-error rates of logic chips precisely, the following two requirements should he satisfied. Logic VLSIs consist of complicated networks of combinational logic circuits built with logic gates like inverters and sequential elements like flip-flops. It is required to count up the number of radiation-induced upsets of stored data at each sequential element scattered in the chips. Moreover, the data upsets are induced by not only direct radiation hits to the sequential elements and also latching pulse-type noises named "single-event transients, SETs, " which are generated by radiation hits to combinational logic circuits. The former is generally called "soft errors in sequential elements, " and the latter "soft errors in combinational logic circuits." It is now important to evaluate the impact of the soft errors in combinational logic circuits in particular. These both types of soft errors should be evaluated separately.
Our test technology is based on the scan test technology, which is widely used in today's logic chips for testing their operations because it enables us to write and read each sequential element directly. We have developed a scan flip- flop circuit and an irradiation test method for the soft-error rates evaluation. We have experimentally demonstrated the validity of the technology. Moreover, we have successfully revealed detailed pulse-width distributions of SETs in SOI-CMOS logic gates, and developed a fast and accurate estimation technique of SET waveforms.

Report

(3 results)
  • 2007 Annual Research Report   Final Research Report Summary
  • 2006 Annual Research Report
  • Research Products

    (47 results)

All 2008 2007 2006 Other

All Journal Article (19 results) (of which Peer Reviewed: 7 results) Presentation (28 results)

  • [Journal Article] Scan-architecture-based evaluation technique of SET and SEU soft-error rates at each flip-flop in logic VLSI systems2008

    • Author(s)
      Y.Yanagawa, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Scan-architecture-based evaluation technique of SET and SEU soft-errorrates at each fhip-flop in logic VLSI systems2008

    • Author(s)
      Y.Yanagawa, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science (印刷中)

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Feasibility study of a table-based SET-pulse estimation in logic cells from heavy-ion-induced transient currents measured in a single MOSFET2007

    • Author(s)
      D.Kobayashi, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science 54

      Pages: 2347-2354

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Annual Research Report 2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Estimation of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET2007

    • Author(s)
      D.Kobayashi, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science 54

      Pages: 1037-1041

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Feasibility study of a table-based SET-pulse estimation in logic cells from heavy-ion-induced transient currents measured in a single MOSFET2007

    • Author(s)
      D. Kobayashi, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science vol.54, no.6

      Pages: 2347-2354

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Estimation of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET2007

    • Author(s)
      D. Kobayashi, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science vol.54, no.4

      Pages: 1037-1041

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Estimation of single event transient voltage pulses in VLSI circuits fromheavy-ion・-induced transient currents measured in a single MOSFET2007

    • Author(s)
      D.Kobayashi, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science 54

      Pages: 1037-1041

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Estimation of single event transient voltage pulses in VLST circuits from heavy-ion-induced transients measured in a single MOSFET2007

    • Author(s)
      D.Kobayashi et al.
    • Journal Title

      IEEF Transactions on Nuclear Science 54(4)(印刷中)

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Estimation of single event transient voltage pluses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET2007

    • Author(s)
      D.Kobayashi et al.
    • Journal Title

      Proc. 2006 Radiation aeffects on Components and Systemes (RADECS) Workshop (印刷中)

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs2006

    • Author(s)
      D.Kobayashi, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science 53

      Pages: 3372-3378

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Direct measurement of SET pulse-widths in 0.2-μm SOI logic cells irradiated by heavy ions2006

    • Author(s)
      Y.Yanagawa, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science 53

      Pages: 3575-3578

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs2006

    • Author(s)
      D. Kobayashi, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science vol.53, no.6

      Pages: 3372-3378

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Direct measurement of SET pulse-widths in 0.2-μm SOI logic cells irradiated by heavy ions2006

    • Author(s)
      Y. Yanagawa, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science vol.53, no.6

      Pages: 3575-3578

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs2006

    • Author(s)
      D.Kobayashi et al.
    • Journal Title

      IEEF Transactions on Nuclear Science 53(6)

      Pages: 3372-3378

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Direct measurement of SET pulse-widths in 0.2-μm SOI logic cells irradiated by heavy ions2006

    • Author(s)
      Y.Yanagawa et al.
    • Journal Title

      IEEF Transactions on Nuclear Science 53(6)

      Pages: 3575-3578

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Time-domain component analysis of heavy-ion-induced transient-currents in fully-depleted SOi MOSFETs2006

    • Author(s)
      D.Kobayashi et al.
    • Journal Title

      Proc. 7th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA)

      Pages: 99-102

    • Related Report
      2006 Annual Research Report
  • [Journal Article] 単体トランジスタで観測された重イオン誘起過渡電流に基づくシングルイベント過渡電圧パルスの波形推定2006

    • Author(s)
      小林大輔 他
    • Journal Title

      第7回半導体の放射線照射効果研究会予稿集

      Pages: 45-48

    • Related Report
      2006 Annual Research Report
  • [Journal Article] 0.2μm FD-SOI論理セルにおけるシグナルイベント・トランジェントのパル幅測定2006

    • Author(s)
      柳川善光 他
    • Journal Title

      第7回半導体の放射線照射効果研究会

      Pages: 37-40

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Scan-architecture-based evaluation technique of SET and SEU soft-error rates at each flip-flop in logic VLSI systems"

    • Author(s)
      Y. Yanagawa, et. al.
    • Journal Title

      IEEE Transactions on Nuclear Science to be published (to be published)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental verification of scan-architecture-based evaluation technique of SET and SEU soft-error rates at each flip-flop in logic VLSI systems2008

    • Author(s)
      Y.Yanagawa, et. al.
    • Organizer
      2008 European Workshop on Radiation Effects on Components and Systems(RADECS)
    • Place of Presentation
      Jyvaskyla,Finland
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 民生SOI技術に基づく高信頼・高性能宇宙用論理LSIの研究2008

    • Author(s)
      牧野 高紘, 他
    • Organizer
      第8回宇宙科学シンポジウム
    • Place of Presentation
      宇宙科学研究本部(神奈川県相模原市)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Verification of Scan-Architecture-Based Evaluation Technique of SET and SEU Soft-Error Rates at Each Flip-Flop in Logic VLSI Systems2008

    • Author(s)
      Y. Yanagawa, et. al.
    • Organizer
      2008 European Workshop on Radiation Effect on Components and Systems(RADECS) , submitted for possible publication.
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Expehmental verification of scan-architecture-based evaluation techniqueof SET and SEU soft-error rates at each flip-flop in logic VLSI systems2008

    • Author(s)
      Y.Yanagawa, et. al.
    • Organizer
      2008 European Workshop on Radiation Effects on Components and Systems(RADECS)
    • Place of Presentation
      Jyvaskyla, Finland
    • Related Report
      2007 Annual Research Report
  • [Presentation] Scan-architecture-based evaluation technique of SET and SEU soft-error rates at each flip-flop in logic VLSI systems2007

    • Author(s)
      Y.Yanagawa, et. al.
    • Organizer
      2007 European Conference on Radiation Effects on Components and Systems(RADECS)
    • Place of Presentation
      Deauville,France
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 論理回路の新しいソフトエラーモード『シングルイベント・トランジェント』をデバイスレベルで考える2007

    • Author(s)
      小林大輔, 他
    • Organizer
      2007年秋季第68回応用物理学会学術講演会内シンポジウム「先端LSIに与える放射線の影響"ソフトエラーとハードエラー"」
    • Place of Presentation
      北海道工業大学(北海道札幌市)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Annual Research Report 2007 Final Research Report Summary
  • [Presentation] Feasibility study of a table-based SET-pulse estimation in logic cells from heavy-ion-induced transient currents measured in a single MOSFET2007

    • Author(s)
      D.Kobayashi, et. al.
    • Organizer
      2007 IEEE Nuclear and Space Radiation Effects Conference(NSREC)
    • Place of Presentation
      Honolulu,HI,USA
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Fast and physically-accurate estimation of single event transient pulses from radiation-induced transient currents measured in a single MOSFET:a simulation-based case study in bulk CMOS logic circuits2007

    • Author(s)
      D.Kobayashi, et. al.
    • Organizer
      2007 IEEE Workshop on Silicon Errors in Logic-System Effects(SELSE3)
    • Place of Presentation
      Austin,TX,USA
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] シングルイベント過渡パルスの高速・高精度な波形推定:1 原理2007

    • Author(s)
      小林大輔, 他
    • Organizer
      2007年春季第54回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学(神奈川県相模原市)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Scan-architecture-based evaluation technique of SET and SEU soft-error rates at each flip-flop in logic VLSI systems2007

    • Author(s)
      Y. Yanagawa, et. al.
    • Organizer
      2007 European Conference on Radiation Effect on Components and Systems(RADECS)
    • Place of Presentation
      Deauville, France(A-4)
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Feasibility study of a table-based SET-pulse estimation in logic cells from heavy-ion-induced transient currents measured in a single MOSFET2007

    • Author(s)
      D. Kobayashi, et. al.
    • Organizer
      2007 IEEE Nuclear and Space Radiation Effects Conference(NSREC)
    • Place of Presentation
      Honolulu, HI(paper H-6)
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Fast and physically-accurate estimation of single event transient pulses from radiation-induced transient currents measured in a single MOSFET: a simulation-based case study in bulk CMOS logic circuits2007

    • Author(s)
      D. Kobayashi, et. al.
    • Organizer
      2007 IEEE Workshop on Silicon Errors in Logic-Systems Effects(SELSE3)
    • Place of Presentation
      Austin, TX
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Scan-architecture-based evaluation technique of SET and SEU soft-errorrates at each flip-flop in logic VLSI svstems2007

    • Author(s)
      Y.Yanagawa, et. al.
    • Organizer
      2007 European Conference on Radiation Effects onComponents and Systems(RADECS)
    • Place of Presentation
      Deauville, France
    • Related Report
      2007 Annual Research Report
  • [Presentation] Feasibility study of a table-based SET-pulse estimation in logic cells fromheavy-ion-induced transient currents measured in a single MOSFET2007

    • Author(s)
      D.Kobayashi, et. al.
    • Organizer
      2007 IEEE Nuclear and Space Radiation Effects Conference(NSREC)
    • Place of Presentation
      Honolulu, HI, USA
    • Related Report
      2007 Annual Research Report
  • [Presentation] Fast and physically-accurate estimation of single event transient pulses from radiation-hlduced transient currents measured in a single MOSFET:a simulation-based case study in bulk CMOS logic circuits2007

    • Author(s)
      D.Kobayashi, et. al.
    • Organizer
      2007 IEEE Workshop on Silicon Errors in Logic-System Effects(SELSE3)
    • Place of Presentation
      Austin, TX, USA
    • Related Report
      2007 Annual Research Report
  • [Presentation] 単体トランジスタで観測された重イオン誘起過渡電流に基づくシングルイベント過渡電圧パルスの波形推定2006

    • Author(s)
      小林大輔, 他
    • Organizer
      第7回半導体の放射線照射効果研究会
    • Place of Presentation
      日本大学(千葉県船橋市)
    • Year and Date
      2006-12-09
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 0.2-μm FD-SOI論理セルにおけるシングルイベント・トランジェントのパルス幅測定2006

    • Author(s)
      柳川善光, 他
    • Organizer
      第7回半導体の放射線照射効果研究会
    • Place of Presentation
      日本大学(千葉県船橋市)
    • Year and Date
      2006-12-09
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 宇宙用SOI半導体部品の処理能力向上のための放射線誘起過渡現象の研究2006

    • Author(s)
      小林大輔, 他
    • Organizer
      第7回宇宙科学シンポジウム
    • Place of Presentation
      宇宙科学研究本部(神奈川県相模原市)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs2006

    • Author(s)
      D.Kobayashi, et. al.
    • Organizer
      7th Int.Workshop on Radiation Effects on Semiconductor Devices for Space Applications(RASEDA)
    • Place of Presentation
      Takasaki,Japan
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Estimation of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET2006

    • Author(s)
      D.Kobayashi, et. al.
    • Organizer
      2006 European Workshop on Radiation Effects on Components and Systems(RADECS)
    • Place of Presentation
      Athens,Greece
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 完全空乏型SOI MOSFETにおけるシングルイベント過渡電流の時間領域成分解析2006

    • Author(s)
      小林大輔, 他
    • Organizer
      2006年秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学(滋賀県草津市)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 0.2-μm FD-SOI論理セルにおけるシングルイベントトランジェントのパルス幅測定2006

    • Author(s)
      柳川善光, 他
    • Organizer
      2006年秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学(滋賀県草津市)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs2006

    • Author(s)
      D.Kobayashi, et. al.
    • Organizer
      2006 IEEE Nuclear and Space Radiation Effects Conference(NSREC)
    • Place of Presentation
      Ponte Vedra Beach,FL,USA
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Direct measurement of SET pulse-widths in 0.2-μm SOI logic cells irradiated by heavy ions2006

    • Author(s)
      Y.Yanagawa, et. al.
    • Organizer
      2006 IEEE Nuclear and Space Radiation Effects Conference(NSREC)
    • Place of Presentation
      Ponte Vedra Beach,FL,USA
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Time-domain component-analysis of heavy-ion-induced transient-currents in fully-depleted SOI MOSFETs2006

    • Author(s)
      D. Kobayashi, et. al.
    • Organizer
      7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application(RASEDA)
    • Place of Presentation
      Takasaki, Japan(pp.99-102)
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Estimation of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET2006

    • Author(s)
      D. Kobayashi, et. al.
    • Organizer
      2006 European Workshop on Radiation Effect on Components and Systems(RADECS) , late news paper LN-6
    • Place of Presentation
      Athens, Greece(late news paper LN-6)
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Time-domain component-analysis of heavy-ion-induced transient-currents in FD-SOI MOSFETs2006

    • Author(s)
      D. Kobayashi, et. al.
    • Organizer
      2006 IEEE Nuclear and Space Radiation Effects Conference(NSREC) , FL, late news paper PC-14L
    • Place of Presentation
      Ponte Vedra Beach(late news paper PC-14L)
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Direct measurement of SET pulse-widths in 0.2-μmSOI logic cells irradiated by heavy ions2006

    • Author(s)
      Y. Yanagawa, et. al.
    • Organizer
      2006 IEEE Nuclear and Space Radiation Effects Conference(NSREC) , FL, late news paper PE-12L
    • Place of Presentation
      Ponte Vedra Beach(late news paper PE-12L)
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary

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Published: 2006-04-01   Modified: 2016-04-21  

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