Development of new functional optical devices using near-field excitation at the hetero interface in nanometer-scale
| Project/Area Number |
18H01470
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Basic Section 21050:Electric and electronic materials-related
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| Research Institution | Toyohashi University of Technology (2020-2021)
The University of Tokyo (2018-2019) |
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Principal Investigator |
Yatsui Takashi 豊橋技術科学大学, 工学(系)研究科(研究院), 教授 (80505248)
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| Project Period (FY) |
2018-04-01 – 2021-03-31
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| Project Status |
Completed (Fiscal Year 2021)
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| Budget Amount *help |
¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
Fiscal Year 2020: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2019: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2018: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
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| Keywords | 近接場光 / 非一様光場 / 波数励起 / 近接場光励起 / ヘテロ界面 / 受光センサ / シリコン / 間接遷移半導体 |
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| Outline of Final Research Achievements |
We developed a Si photodetector with high efficiency by utilizing the effect of wavevector excitation and second harmonic generation by the optical near-field. To realize this, we fabricated Si photodetector with nanosctuctures of gold nanoparticle, we examined the efficiency.
We successfully realized that the efficiency was increased as increase in the wavelength to the band gap wavelength around 1100 nm. The efficiency was increased by 20 times in comparison with that without nanosctuctures.
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| Academic Significance and Societal Importance of the Research Achievements |
間接遷移半導体であるSiの光吸収増大を実証することで、太陽電池分野への応用利用が期待される。Si以外にも受光感度が低い間接遷移半導体の利用範囲が広がる。また、二次高調波発生により、バンド端波長よりも長波長帯の利用可能性が広まり、アイセーフ波長光の利用の更なる拡大を図る上で、環境にもやさしいSiを受光材料とする受光センサ実現が期待される。近年自動運転や、ドローンなどに利用される受光センサの開発が盛んであるが、本課題で開発された高感度Si受光センサの実現により、アイセーフ波長用受光センサの低コスト化とそれに伴う広範な普及が進むと期待される。
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Report
(4 results)
Research Products
(22 results)
