| Budget Amount *help |
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2021: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2020: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2019: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2018: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
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| Outline of Final Research Achievements |
Tunnel transistors on two-dimensional materials were fabricated, in which the power consumption in data processing expected to be reduced, and their transistor operation was demonstrated. A semiconductor of transition metal dichalcogenides was used in the channel, and hexagonal boron nitride layer was used in the dielectric layer. For the source/drain electrodes, platinum and nickel were placed in parallel to form a hybrid contact structure to realize injection of both electrons and holes from both source and drain contacts. The difference of the work function in these two metals were utilized to realize electrostatic doping to form n- and p-type regions in a single transistor device which were controlled by two independent gate electrodes. Band-to-band tunneling current was detected in the drain current of this device by tuning the polarity of two gate electrodes.
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