Lanthanoid doped GaN quantum sensors electrically operated at room temperature
| Project/Area Number |
18H01483
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Basic Section 21050:Electric and electronic materials-related
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| Research Institution | National Institutes for Quantum Science and Technology |
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Principal Investigator |
Sato Shin-ichiro 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 主幹研究員 (40446414)
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| Co-Investigator(Kenkyū-buntansha) |
西村 智朗 法政大学, イオンビーム工学研究所, 教授 (80388149)
出来 真斗 名古屋大学, 工学研究科, 准教授 (80757386)
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| Project Period (FY) |
2018-04-01 – 2022-03-31
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| Project Status |
Completed (Fiscal Year 2021)
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| Budget Amount *help |
¥17,030,000 (Direct Cost: ¥13,100,000、Indirect Cost: ¥3,930,000)
Fiscal Year 2021: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2020: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2019: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2018: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
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| Keywords | 半導体工学 / 材料科学 / 量子ビーム科学 / 量子技術 / 量子センシング / 窒化ガリウム半導体 / ランタノイド / 発光ダイオード |
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| Outline of Final Research Achievements |
We have demonstrated nanoscale thermometry (quantum sensing) using photon emissions from Pr ions implanted in GaN. Also, we have shown that Pr-doped GaN quantum sensing under indirect excitation, in other words, electrical control of Pr-doped GaN quantum sensor was feasible. Prior to obtain those outcome, we have systematically clarified effects of implantation temperature and post-annealing conditions on optical activation of implanted Pr ions. In addition, to obtain signals from Pr/Nd ions implanted into nanoscale regions with high signal to background contrast, we have clarified optical properties such as resonant excitation conditions, dependence on excitation power, and luminescence lifetime. Those findings are indispensable to optically manipulate Pr and Nd ions implanted into nanoscale regions in GaN.
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| Academic Significance and Societal Importance of the Research Achievements |
ランタノイドドープGaN量子センシングを提案し、実験的に実証したことは、近年世界的に注目されている量子技術のひとつである量子センシングをさらに発展させる社会的意義の大きい成果である。また、近年開発が進められているGaNパワー半導体の診断技術へと応用できれば、GaNパワーエレクトロニクスの発展に寄与でき、デバイス高効率化による省エネ・CO2削減へと貢献できる。また、今回の成果のベースとなる高温Prイオン注入によるPr活性化および照射欠陥の回復に関する知見は、材料科学分野において学術的意義が高く、GaNイオン注入技術の発展にも寄与するものと考えられる。
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Report
(5 results)
Research Products
(25 results)
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[Presentation] Quantum Sensing Using Lanthanoid Doped Gallium Nitride2021
Author(s)
Shin-ichiro Sato, Manato Deki, Tomoaki Nishimura, Shuo Li, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Andrew D. Greentree, Brant C. Gibson, Hiroshi Amano, and Takeshi Ohshima
Organizer
13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science
Related Report
Int'l Joint Research / Invited
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[Presentation] Enhanced Photon Extraction from Praseodymium Ions Implanted with Gallium Nitride NanopillarsARS2020
Author(s)
Shin-ichiro Sato, Shuo Li, Manato Deki, Tomoaki Nishimura, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Brant C. Gibson, Andrew D. Greentree, Hiroshi Amano, and Takeshi Ohshima
Organizer
4th QST International Symposium
Related Report
Int'l Joint Research
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