| Budget Amount *help |
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2020: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2019: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2018: ¥14,170,000 (Direct Cost: ¥10,900,000、Indirect Cost: ¥3,270,000)
|
|---|
| Outline of Final Research Achievements |
In this study, we studied HfO2-based farroelectric device in terms of material, device and application. For material, we found that oxide semiconductor IGZO forms defect-less interface with ferroelectric-HfO2 and clarified the mechanism of the emergence of ferroelectricity in HfO2 thin film by using first-principles calculation. For device, we developed comprehensive device model of ferroelectric-HfO2 FeFET including the dynamics of polarization and charge trapping, and demonstrated prototype FeFET memory toward 3D vertically stacked memory device application. For application, we proposed and demonstrated IGZO access transistor that drives ferroelectric HfO2 capacitor for monolithic integration of embedded FeRAM.
|
