| Budget Amount *help |
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2020: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2019: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2018: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
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| Outline of Final Research Achievements |
In this work, we aimed to solve the conductivity mismatch problem at the interface of ferromagnetic metal / semiconductor by utilizing ballistic transport in nanoscale semiconductor channel. We fabricated nanoscale Si-based spin valve devices with Fe/(Mg)/MgO/Ge spin injector/detector and 20 nm-long Si channel, and achieved a large spin-valve ratio of -3.6% and large spin-dependent output voltage of 25 mV. We then fabricated fully epitaxial MnGa/GaAs/MnGa III-V semiconductor-based nanoscale spin valve devices, and achieved a world-record spin valve ratio of 12% and spin-dependent output voltage of 33 mV. Our results demonstrate that ballistic transport in nanoscale semiconductor is very promising for realization of high performance spin transistors.
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