| Budget Amount *help |
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2021: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2020: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2019: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2018: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
|
|---|
| Outline of Final Research Achievements |
To reduce the effect of the density of states at the interface between InSb and Al2O3, we tried to insert the thin GaSb layer between InSb and Al2O3. The devices with the structure showed lower device performance compared with the previous one (without thin GaSb layer). So it is necessary to study the reason.
We tried to fabricate p-MOSFETs using GaSb/Si, and characterized their device performance. We succeeded in fabricating p-MOSFETs. However, their device performance and/or yield was not good. So it is necessary to improve device performance of p-MOSFETs for realization of CMOS.
|
