Development of ultrahigh efficiency planer-type electron emission devices using a stacked structure of atomic layer materials

• Project/Area Number: 18H01505
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Murakami Katsuhisa 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (20403123)
• Co-Investigator(Kenkyū-buntansha): 山田 洋一 筑波大学, 数理物質系, 准教授 (20435598)
• Project Period (FY): 2018-04-01 – 2021-03-31
• Project Status: Completed (Fiscal Year 2020)
• Budget Amount: ¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000); Fiscal Year 2020: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2019: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000); Fiscal Year 2018: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
• Keywords: グラフェン / 六方晶窒化ホウ素 / 化学気相成長 / 電子放出 / 平面型電子放出デバイス / 電子放出デバイス

Outline of Final Research Achievements

The planar type electron emission devices using atomic layered materials of graphene and hexagonal boron nitride (h-BN) were developed to suppress inelastic electron scattering within the device structure. High emission efficiency of 48.5 % and high emission current density of more than 100 mA/cm^2 were achieved by the suppression of the inelastic electron scattering within the topmost gate electrode using graphene. In addition, highly monochromatic electron emission with an energy spread of 0.18 eV in the full width at half maximum were realized by the suppression of the inelastic electron scattering within the topmost gate electrode and insulating layer using the graphene/h-BN heterostructure.

Academic Significance and Societal Importance of the Research Achievements

本研究では、原子層物質であるグラフェンや六方晶窒化ホウ素の電子透過性を活用した平面型電子放出デバイスを提案し、その特性を従来素子と比較して飛躍的に向上させることに成功した。特に、放出電子のエネルギー幅0.18eVは、従来最も単色性の高い電子源であるタングステン冷陰極のエネルギー幅0.3eVを凌駕するものであり、電子顕微鏡や電子線分析装置、半導体製造分野へ与えるインパクトは大きい。また、デバイス内部での電子散乱を放出電子のエネルギー分布から分析することで、従来計測が困難であった10eV帯低エネルギー電子の原子層物質内での電子散乱機構を明らかにでき、学術的にも興味深い知見が得られた。

Research Products

• [Journal Article] Origin of monochromatic electron emission from planar-type graphene/hexagonal boron nitride/n-type silicon electron emission devices (2021)
  • Author(s): Tomoya Igari, Masayoshi Nagao, Kazutaka Mitsuishi, Masahiro Sasaki, Yoichi Yamada and Katsuhisa Murakami
  • Journal Title: Physical Review Applied Volume: 15 Issue: 1 Pages: 014044-014044
  • DOI: 10.1103/physrevapplied.15.014044
  • Peer Reviewed
• [Journal Article] Development of High-performance Electron Sources and Its Application (2020)
  • Author(s): NAGAO Masayoshi、MURAKAMI Katsuhisa
  • Journal Title: Vacuum and Surface Science Volume: 63 Issue: 1 Pages: 7-12
  • DOI: 10.1380/vss.63.7
  • NAID: 130007784334
  • ISSN: 2433-5835, 2433-5843
  • Year and Date: 2020-01-10
  • Peer Reviewed
• [Journal Article] Mechanism of Highly Efficient Electron Emission from Graphene/Oxide/Semiconductor Structure (2020)
  • Author(s): Katsuhisa Murakami, Manabu Adachi, Joji Miyaji, Ryo Furuya, Masayoshi Nagao, Yoichi Yamada, Yoichiro Neo, Yoshinori Takao, Masahiro Sasaki, and Hidenori Mimura
  • Journal Title: ACS Appl. Electron. Mater. Volume: 2 Issue: 7 Pages: 2265-2273
  • DOI: 10.1021/acsaelm.0c00449
  • Peer Reviewed
• [Journal Article] Low-power-consumption, high-current-density, and propellantless cathode using graphene-oxide-semiconductor structure array (2020)
  • Author(s): Furuya Ryo、Takao Yoshinori、Nagao Masayoshi、Murakami Katsuhisa
  • Journal Title: Acta Astronautica Volume: 174 Pages: 48-54
  • DOI: 10.1016/j.actaastro.2020.04.014
  • Peer Reviewed
• [Journal Article] Electron emission properties of planar-type electron emission sources based on nanocrystalline silicon (2020)
  • Author(s): Shimawaki H.、Murakami K.、Nagao M.、Mimura H.
  • Journal Title: Technical Digest of 33rd International Vacuum Nanoelectronics Conference Volume: 1 Pages: 82-83
  • DOI: 10.1109/ivnc49440.2020.9203289
• [Journal Article] High-performance planar-type electron source based on a graphene-oxide-semiconductor structure (2019)
  • Author(s): Murakami Katsuhisa、Miyaji Joji、Furuya Ryo、Adachi Manabu、Nagao Masayoshi、Neo Yoichiro、Takao Yoshinori、Yamada Yoichi、Sasaki Masahiro、Mimura Hidenori
  • Journal Title: Applied Physics Letters Volume: 114 Issue: 21 Pages: 213501-213501
  • DOI: 10.1063/1.5091585
  • NAID: 120007127634
  • Peer Reviewed / Open Access
• [Journal Article] Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure (2019)
  • Author(s): Murakami Katsuhisa、Igari Tomoya、Mitsuishi Kazutaka、Nagao Masayoshi、Sasaki Masahiro、Yamada Yoichi
  • Journal Title: ACS Applied Materials & Interfaces Volume: 12 Issue: 3 Pages: 4061-4067
  • DOI: 10.1021/acsami.9b17468
  • Peer Reviewed
• [Journal Article] 小型イオンエンジン用Graphene/SiO2/Si積層型mA級平面電子源の開発 (2019)
  • Author(s): 古家 遼、長尾 昌善、村上 勝久、鷹尾 祥典
  • Journal Title: 信学技報 Volume: 119 Pages: 21-24
• [Journal Article] Graphene/h-BNの積層構造を用いた平面型電子源 (2019)
  • Author(s): Graphene/h-BNの積層構造を用いた平面型電子源
  • Journal Title: 信学技報 Volume: 119 Pages: 63-66
• [Journal Article] Development of Low-Voltage-Driven Propellantless Cathodes with High-Current Density Based on Graphene-Oxide-Semiconductor Structure (2019)
  • Author(s): R. Furuya, K. Murakami, M. Nagao, Y. Takao
  • Journal Title: Proceedings of 36th International Electric Propulsion Conference Volume: HS6-A153 Pages: 1-5
• [Journal Article] Graphene-oxide-semiconductor planar-type electron emission device and its applications (2018)
  • Author(s): Murakami Katsuhisa、Miyaji Joji、Furuya Ryo、Adachi Manabu、Nagao Masayoshi、Yoshihiro Nemoto、Takeguchi Masaki、Neo Yoichiro、Takao Yoshinori、Yamada Yoichi、Sasaki Masahiro、Mimura Hidenori
  • Journal Title: Technical digest 31st International Vacuum Nanoelectronics Conference Volume: 31 Pages: 36-37
  • DOI: 10.1109/ivnc.2018.8520076
• [Journal Article] Improvement of Electron Emission Efficiency of Graphene-Oxide-Semiconductor Planar-Type Electron Sources for Nanosatellite Neutralizers (2018)
  • Author(s): Furuya Ryo、Murakami Katsuhisa、Nagao Masayoshi、Takao Yoshinori
  • Journal Title: Technical digest 31st International Vacuum Nanoelectronics Conference Volume: 31 Pages: 188-189
  • DOI: 10.1109/ivnc.2018.8519982
• [Journal Article] Evaluation of electron emission properties of graphene-oxide-silicon planar type cold cathode for an electron microscope (2018)
  • Author(s): Miyaji Joji、Murakami Katsuhisa、Nagao Masayoshi、Neo Yoichiro、Mimura Hidenori
  • Journal Title: Technical digest 31st International Vacuum Nanoelectronics Conference Volume: 31 Pages: 204-205
  • DOI: 10.1109/ivnc.2018.8520285
• [Journal Article] Interface-induced perpendicular magnetic anisotropy of Co nanoparticles on single-layer h-BN/Pt(111) (2018)
  • Author(s): Watanabe Takahiro、Yamada Yoichi、Koide Akihiro、Entani Shiro、Li Songtian、Popov Zakhar I.、Sorokin Pavel B.、Naramoto Hiroshi、Sasaki Masahiro、Amemiya Kenta、Sakai Seiji
  • Journal Title: Applied Physics Letters Volume: 112 Issue: 2 Pages: 022407-022407
  • DOI: 10.1063/1.5010836
  • NAID: 120007133813
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Dirac Cone Spin Polarization of Graphene by Magnetic Insulator Proximity Effect Probed with Outermost Surface Spin Spectroscopy (2018)
  • Author(s): Sakai Seiji、Erohin Sergei V.、Popov Zakhar I.、Haku Satoshi、Watanabe Takahiro、Yamada Yoichi、Entani Shiro、Li Songtian、Avramov Pavel V.、Naramoto Hiroshi、Ando Kazuya、Sorokin Pavel B.、Yamauchi Yasushi
  • Journal Title: Advanced Functional Materials Volume: 28 Issue: 20 Pages: 1800462-1800462
  • DOI: 10.1002/adfm.201800462
  • Peer Reviewed / Int'l Joint Research
• [Presentation] Resistance Investigation of Graphene-Oxide-Semiconductor Planar-Type Electron Sources against Atomic Oxygen (2021)
  • Author(s): Naoyuki Matsumoto, Katsuhisa Murakami, Masayoshi Nagao, and Yoshinori Takao
  • Organizer: The 10th Asian Joint Conference on Propulsion and Power
  • Int'l Joint Research
• [Presentation] 六方晶窒化ホウ素による平面型グラフェン電子源の酸素耐性向上と特性評価 (2020)
  • Author(s): 松本直之、村上勝久、長尾昌善、鷹尾祥典
  • Organizer: 第64回宇宙科学技術連合講演会
• [Presentation] Electron emission properties of planar-type electron emission sources based on nanocrystalline silicon (2020)
  • Author(s): Hidetaka Shimawaki, Katsuhisa Murakami, Masayoshi Nagao, and Hidenori Mimura
  • Organizer: 33rd International Vacuum Nanoelectronics Conference
  • Int'l Joint Research
• [Presentation] Graphene/h-BN平面型電子源からの単色電子放出 (2020)
  • Author(s): 猪狩 朋也、長尾 昌善、三石 和貴、佐々木 正洋、山田 洋一、村上 勝久
  • Organizer: 第67回応用物理学会春季学術講演会，東京
  • Invited
• [Presentation] Development of Planar-type Electron Emission Device Based on a Graphene/h-BN Heterostructure (2019)
  • Author(s): T. Igari, M. Nagao, Y. Yamada, M. Sasaki, and K. Murakami,
  • Organizer: Joint meeting of International Vacuum Nanoelectronics Conference and International Vacuum Electron Sources, Cincinnati, USA
  • Int'l Joint Research
• [Presentation] Development of Low-Voltage-Driven Propellantless Cathodes with High-Current Density Based on Graphene-Oxide-Semiconductor Structure (2019)
  • Author(s): R. Furuya, K. Murakami, M. Nagao, and Y. Takao
  • Organizer: 36th International Electric Propulsion Conference, Austria
  • Int'l Joint Research
• [Presentation] Graphene/h-BN を用いた原子層物質積層平面型電子源 (2019)
  • Author(s): 猪狩 朋也、長尾 昌善、三石 和貴、佐々木 正洋、山田 洋一、村上勝久
  • Organizer: 第80回応用物理学会秋期学術講演会，札幌
• [Presentation] 超小型イオンエンジン用Graphene/SiO2/Si積層平面型電子源の大電流化 (2019)
  • Author(s): 古家 遼、村上 勝久、長尾 昌善、鷹尾 祥典
  • Organizer: 日本表面真空学会学術講演会，つくば市
• [Presentation] 低電圧駆動可能な小型中和器実現に向けたグラフェン/SiO2/Si積層型平面電子源の大電流化 (2019)
  • Author(s): 古家 遼、村上 勝久、長尾 昌善、鷹尾 祥典
  • Organizer: 第63回宇宙科学技術連合講演会，徳島
• [Presentation] 小型イオンエンジン用Graphene/SiO2/Si積層型mA級平面電子源の開発 (2019)
  • Author(s): 古家 遼、長尾 昌善、村上 勝久、鷹尾 祥典
  • Organizer: 電子情報通信学会電子デバイス研究会，東京
• [Presentation] Graphene/h-BNの積層構造を用いた平面型電子源 (2019)
  • Author(s): 猪狩 朋也、長尾 昌善、三石 和貴、佐々木 正洋、山田 洋一、村上 勝久
  • Organizer: 電子情報通信学会電子デバイス研究会，東京
• [Presentation] 小型イオンエンジン用平面型グラフェン電子源の電子電流特性評価 (2019)
  • Author(s): 古家 遼、村上 勝久、長尾 昌善、鷹尾 祥典
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] 宇宙利用を目指した平面型グラフェン電子源の放出電子電流向上 (2019)
  • Author(s): 古家 遼、村上 勝久、長尾 昌善、鷹尾 祥典
  • Organizer: 宇宙輸送シンポジウム
• [Presentation] Graphene-oxide-semiconductor planar-type electron emission device and its applications (2018)
  • Author(s): K. Murakami
  • Organizer: 31st International Vacuum Nanoelectronics Conference
  • Int'l Joint Research / Invited
• [Presentation] 絶縁基板上へのグラフェンの直接合成技術と新規電子デバイスへの応用 (2018)
  • Author(s): 村上 勝久、長尾 昌善
  • Organizer: 産業技術連携推進会議 情報通信・エレクトロニクス部会 第14回電子技術分科会
• [Presentation] 平面型グラフェン電子源の放出効率向上と 大電流化に向けた取り組み (2018)
  • Author(s): 古家 遼、村上 勝久、長尾 昌善、鷹尾 祥典
  • Organizer: 第62回宇宙科学技術連合講演会
• [Presentation] 超小型人工衛星に搭載可能なマイクロ電気推進機 (2018)
  • Author(s): 鷹尾 祥典、土屋 智由、長尾 昌善、村上 勝久
  • Organizer: 安全工学シンポジウム2018
• [Patent(Industrial Property Rights)] 電子放出素子およびその製造方法 (2024)
  • Inventor(s): 村上勝久、長尾昌善
  • Industrial Property Rights Holder: 国立研究開発法人産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Acquisition Date: 2024
  • Overseas
• [Patent(Industrial Property Rights)] 電子放出素子およびその製造方法 (2023)
  • Inventor(s): 村上勝久、長尾昌善
  • Industrial Property Rights Holder: 国立研究開発法人産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Acquisition Date: 2023
• [Patent(Industrial Property Rights)] 電子放出素子およびその製造方法 (2021)
  • Inventor(s): 村上 勝久, 長尾 昌善
  • Industrial Property Rights Holder: 産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Filing Date: 2021
  • Overseas
• [Patent(Industrial Property Rights)] 電子放出素子およびその製造方法 (2021)
  • Inventor(s): 村上 勝久, 長尾 昌善
  • Industrial Property Rights Holder: 国立研究開発法人産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Filing Date: 2021
  • Overseas
• [Patent(Industrial Property Rights)] 平面型電子放出素子 (2020)
  • Inventor(s): 村上勝久、長尾昌善
  • Industrial Property Rights Holder: 国立研究開発法人産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2020-051288
  • Filing Date: 2020
• [Patent(Industrial Property Rights)] 電子放出素子及び電子顕微鏡 (2019)
  • Inventor(s): 村上勝久、長尾昌善
  • Industrial Property Rights Holder: 国立研究開発法人産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2019-088138
  • Filing Date: 2019