| Budget Amount *help |
¥13,650,000 (Direct Cost: ¥10,500,000、Indirect Cost: ¥3,150,000)
Fiscal Year 2020: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2019: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2018: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
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| Outline of Final Research Achievements |
The room-temperature crystal growth of wide-gap Ga2O3 thin films with n- and p-type impurities was successfully achieved by irradiating amorphous Ga2O3 thin films on sapphire substrates at room temperature from the backside of the substrates with UV pulsed laser. TEM analysis revealed that room-temperature crystal growth occurred at the thin film/substrate interface. Furthermore, the presence of Li as p-type Ga2O3 impurity in the film was confirmed by SIMS analysis. In addition, we succeeded for the first time in synthesizing an oriented Ga2O3 crystal thin film on a polymer sheet at room temperature by laser irradiation of the surface of an amorphous Ga2O3 film on a polymer sheet with a buffer layer (amorphous Al2O3 film/ZnO oriented film).
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