| Budget Amount *help |
¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2020: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2019: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2018: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Outline of Final Research Achievements |
I have fabricated a 2DTI (two-dimensional topological insulator) like Bi monolayer film (called Bismuthene) by using a molecular-beam-epitaxy and characterized the electronic state like Dirac-electron and topological non-trivial edge state by angle-resolved photoemission spectroscopy (ARPES). Firstly, by developing a semiconductor hydrogen-annealing system, I obtained a clean hydrogen-terminated SiC (H-SIC) semiconductor surface. After depositing Bi atoms into H-SiC substrate, I clearly observed not only the superstructure patterns by LEED but also the hole-like dispersive feature by ARPES. These results indicate that we have succeeded in fabricating Bismuthene on H-SiC. In the future, I would clarify the band-gap feature of Dirac electrons and the edge-state in 2DTI. In this study. I also developed a new method for controlling the Dirac electrons by 2DTI heterostructures.
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