| Budget Amount *help |
¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
Fiscal Year 2021: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2020: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2019: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2018: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
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| Outline of Final Research Achievements |
For the purpose of establishing a global safe and secure life and adapting to an information-oriented society with ultra-high speed and ultra-large capacity while ensuring global environmental protection, I aimed to fabricate α-Al2(1-x)Ga2xO3 based deep ultraviolet LED and high mobility transistors by mist CVD. A technique for manipulating the composition and characteristics of various functional thin films have been built and a technique for controlling the surface roughness of Ga2O3 based functional thin films and the advantages of using mist CVD in synthesizing them have been found. Also, a Schottky barrier diode (SBD) and a high electron mobility transistor (HEMT) have been fabricated and a Si:AlGaOx thin film device with a bandgap of 6.22 eV, which is equivalent to AlN, have been succeeded in demonstration. On the other hand, due to budgetary problems and countermeasures against new infectious diseases, some research cannot be carried out and it is regrettable.
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