| Budget Amount *help |
¥34,450,000 (Direct Cost: ¥26,500,000、Indirect Cost: ¥7,950,000)
Fiscal Year 2020: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
Fiscal Year 2019: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
Fiscal Year 2018: ¥13,260,000 (Direct Cost: ¥10,200,000、Indirect Cost: ¥3,060,000)
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| Outline of Final Research Achievements |
Barium disilicide (BaSi2) is one of the emerging materials for solar cell applications. It has a large absorption coefficient and a suitable band gap of 1.3 eV. In the past, p-BaSi2/n-Si heterojunction solar cells have been achieved. However, photons absorbed in the n-Si side contribute mostly to photocurrents. In this work, we achieved the first demonstration of BaSi2-pn homojunction solar cells and n-ZnO/p-BaSi2 heterojunction solar cells, wherein photogenerated carriers in the BaSi2 layers contribute mostly to the photocurrent.
We have also investigated defects in BaSi2 films. According to first-principles calculations, Si vacancies are most likely to form. We found by experiment that these defects are inactivated by atomic hydrogen doping, and the mechanism of inactivations is clarified based on first-principles studies. We further developed the BaSi2 thin-film growth technique by sputtering, and demonstrated the first operation of n-BaSi2/p-Si solar cells.
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