| Project/Area Number |
18H03779
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Medium-sized Section 21:Electrical and electronic engineering and related fields
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| Research Institution | Kyoto University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
西 佑介 京都大学, 工学研究科, 助教 (10512759)
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| Project Period (FY) |
2018-04-01 – 2021-03-31
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| Project Status |
Completed (Fiscal Year 2020)
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| Budget Amount *help |
¥44,460,000 (Direct Cost: ¥34,200,000、Indirect Cost: ¥10,260,000)
Fiscal Year 2020: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2019: ¥14,560,000 (Direct Cost: ¥11,200,000、Indirect Cost: ¥3,360,000)
Fiscal Year 2018: ¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
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| Keywords | 炭化珪素 / 半絶縁性基板 / イオン注入 / 電界効果トランジスタ / 耐環境素子 / 深い準位 / 相補型素子 / 結晶欠陥 |
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| Outline of Final Research Achievements |
SiC is a promising wide bandgap semiconductor for integrated circuits (ICs) operational under harsh environment such as high temperature. In this study, basic subjects on the SiC material, especially semi-insulating SiC, for IC applications and fabrication of SiC-based complimentary junction field-effect transistors (CJFETs), which we proposed, have been investigated. Based on several studies on ion implantation and device designing to avoid short-channel effects, a world-first SiC CJFET inverter has been demonstrated. The SiC CJFET inverter consisting of normally-off n- and p-channel JFETs exhibited good characteristics with very low static power consumption at a power-supply voltage as low as 1.4 V.
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| Academic Significance and Societal Importance of the Research Achievements |
Si集積回路の進展は著しく、エレクトロニクス社会の根幹を支えるハードウェアとなっているが、Siの物性限界により、250℃以上の高温や放射線下で安定に動作する集積回路を作製することは困難である。高温動作に関しては、エンジン、ボイラー等の燃焼炉制御、資源（石油など）採掘など、放射線環境動作に関しては、原子炉モニター、宇宙探査などの応用があり、根強いニーズがある。本研究を通じて、SiC半導体の高温電子物性を明らかにでき、さらに低消費電力の相補型トランジスタ(CJFET)の室温～300℃動作を実証した。本研究により、SiC CJFETを用いた耐環境動作集積回路の基盤を築くことができた。
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