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Clarification of physical properties in semi-insulating SiC wafers and fabrication of complimentary junction field-effect transistors

Research Project

Project/Area Number 18H03779
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Review Section Medium-sized Section 21:Electrical and electronic engineering and related fields
Research InstitutionKyoto University

Principal Investigator

Tsunenobu Kimoto  京都大学, 工学研究科, 教授 (80225078)

Co-Investigator(Kenkyū-buntansha) 西 佑介  京都大学, 工学研究科, 助教 (10512759)
Project Period (FY) 2018-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥44,460,000 (Direct Cost: ¥34,200,000、Indirect Cost: ¥10,260,000)
Fiscal Year 2020: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2019: ¥14,560,000 (Direct Cost: ¥11,200,000、Indirect Cost: ¥3,360,000)
Fiscal Year 2018: ¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Keywords炭化珪素 / 半絶縁性基板 / イオン注入 / 電界効果トランジスタ / 耐環境素子 / 深い準位 / 相補型素子 / 結晶欠陥
Outline of Final Research Achievements

SiC is a promising wide bandgap semiconductor for integrated circuits (ICs) operational under harsh environment such as high temperature. In this study, basic subjects on the SiC material, especially semi-insulating SiC, for IC applications and fabrication of SiC-based complimentary junction field-effect transistors (CJFETs), which we proposed, have been investigated. Based on several studies on ion implantation and device designing to avoid short-channel effects, a world-first SiC CJFET inverter has been demonstrated. The SiC CJFET inverter consisting of normally-off n- and p-channel JFETs exhibited good characteristics with very low static power consumption at a power-supply voltage as low as 1.4 V.

Academic Significance and Societal Importance of the Research Achievements

Si集積回路の進展は著しく、エレクトロニクス社会の根幹を支えるハードウェアとなっているが、Siの物性限界により、250℃以上の高温や放射線下で安定に動作する集積回路を作製することは困難である。高温動作に関しては、エンジン、ボイラー等の燃焼炉制御、資源(石油など)採掘など、放射線環境動作に関しては、原子炉モニター、宇宙探査などの応用があり、根強いニーズがある。本研究を通じて、SiC半導体の高温電子物性を明らかにでき、さらに低消費電力の相補型トランジスタ(CJFET)の室温~300℃動作を実証した。本研究により、SiC CJFETを用いた耐環境動作集積回路の基盤を築くことができた。

Report

(4 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • Research Products

    (40 results)

All 2021 2020 2019 2018

All Journal Article (14 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 14 results,  Open Access: 2 results) Presentation (25 results) (of which Int'l Joint Research: 25 results,  Invited: 12 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures2021

    • Author(s)
      M. Hara, M. Kaneko, and T. Kimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: SB Pages: SBBD14-SBBD14

    • DOI

      10.35848/1347-4065/abe3d8

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Tunneling Current in 4H-SiC p-n Junction Diodes2020

    • Author(s)
      M. Kaneko, X. Chi, and T. Kimoto
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 67 Issue: 8 Pages: 3329-3334

    • DOI

      10.1109/ted.2020.3001909

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Defect engineering in SiC technology for high-voltage power devices2020

    • Author(s)
      T. Kimoto and H. Watanabe
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 12 Pages: 120101-120101

    • DOI

      10.35848/1882-0786/abc787

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs2020

    • Author(s)
      M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 67 Issue: 10 Pages: 4538-4540

    • DOI

      10.1109/ted.2020.3017143

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces2020

    • Author(s)
      M. Hara, S. Asada, T. Maeda, and T. Kimoto
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 4 Pages: 041001-041001

    • DOI

      10.35848/1882-0786/ab7bcd

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate2019

    • Author(s)
      Nakajima M.、Kaneko M.、Kimoto T.
    • Journal Title

      IEEE Electron Device Letters

      Volume: 40 Issue: 6 Pages: 866-869

    • DOI

      10.1109/led.2019.2910598

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of vacuum annealing on interface properties of SiC (0001) MOS structures2019

    • Author(s)
      K. Ito, T. Kobayashi, and T. Kimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 7 Pages: 078001-078001

    • DOI

      10.7567/1347-4065/ab2557

    • NAID

      210000156265

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Demonstration of conductivity modulation in SiC bipolar junction transistors with reduced base spreading resistance2019

    • Author(s)
      S. Asada, J. Suda, and T. Kimoto
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 66 Issue: 11 Pages: 4870-4874

    • DOI

      10.1109/ted.2019.2941884

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation2019

    • Author(s)
      Kaneko Mitsuaki、Grossner Ulrike、Kimoto Tsunenobu
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 841-844

    • DOI

      10.4028/www.scientific.net/msf.963.841

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing2019

    • Author(s)
      T. Kobayashi, J. Suda, and T. Kimoto
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 3 Pages: 031001-031001

    • DOI

      10.7567/1882-0786/ab032b

    • NAID

      210000135625

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices2019

    • Author(s)
      T. Kimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 1 Pages: 018002-018002

    • DOI

      10.7567/1347-4065/aae896

    • NAID

      120006550407

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] High-temperature operation of n- and p-channel JFETs fabricated by ion implantation into a high-purity semi-insulating SiC substrate2018

    • Author(s)
      M. Kaneko and T. Kimoto
    • Journal Title

      IEEE Electron Device Letters

      Volume: 39 Issue: 5 Pages: 723-726

    • DOI

      10.1109/led.2018.2822261

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations2018

    • Author(s)
      S. Asada, J. Suda and T. Kimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Issue: 8 Pages: 088002-088002

    • DOI

      10.7567/jjap.57.088002

    • NAID

      120006552908

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Determination of surface recombination velocity from current-voltage characteristics in SiC p-n diodes2018

    • Author(s)
      S. Asada, J. Suda and T. Kimoto
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 65 Issue: 11 Pages: 4786-4791

    • DOI

      10.1109/ted.2018.2867545

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Presentation] Progress and Future Challenges of SiC Power MOSFETs2021

    • Author(s)
      T. Kimoto, T. Kobayashi, K. Tachiki, K. Ito, and M. Kaneko
    • Organizer
      5th IEEE Electron Devices Technology and Manufacturing Conference 2021
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Progress and Future Prospects of High-Voltage SiC Power Devices2020

    • Author(s)
      T. Kimoto and M. Kaneko
    • Organizer
      2020 Int. Symp. on VLSI Technology, Systems and Applications
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Reverse Field Emission Current in Heavily-Doped SiC Schottky Barrier Diodes2020

    • Author(s)
      M. Hara, S. Asada, T. Maeda, and T. Kimoto
    • Organizer
      International Symposium on Creation of Advanced Photonic and Electronic Devices 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals2020

    • Author(s)
      M. Hara, M. Kaneko, and T. Kimoto
    • Organizer
      2020 Int. Conf. on Solid State Devices and Materials
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate2020

    • Author(s)
      Q. Jin, M. Nakajima, M. Kaneko, and T. Kimoto
    • Organizer
      2020 Int. Conf. on Solid State Devices and Materials
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Progress and future challenges of SiC power devices for energy efficiency2020

    • Author(s)
      T. Kimoto and M. Kaneko
    • Organizer
      12th Int. Symp. on Advanced Plasma Sci. & Its Applications for Nitrides and Nanomaterials
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] SiC power devices: Overview, defect electronics, and reliability2019

    • Author(s)
      T. Kimoto
    • Organizer
      2019 IEEE Int. Reliability Physics Symposium
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Growth and defect reduction of SiC for low-loss power devices2019

    • Author(s)
      T. Kimoto
    • Organizer
      2nd Nucreation and Growth Research Conference
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Progress and future challenges of SiC power devices2019

    • Author(s)
      T. Kimoto
    • Organizer
      Cambridge Power Electronics Colloquium 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Promise and future challenges of SiC power MOSFETs2019

    • Author(s)
      T. Kimoto, T. Kobayashi, K. Tachiki, and K. Ito
    • Organizer
      International Conference on Insulating Films on Semiconductors 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Reduction of interface states in 4H-SiC/SiO2 near both conduction and valence band edges by high-temperature nitrogen annealing2019

    • Author(s)
      K. Tachiki and T. Kimoto
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Interface state density distributions near the conduction band edge originating from the conduction band fluctuation in SiO2/SiC systems2019

    • Author(s)
      K. Ito, T. Kobayashi, and T. Kimoto
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Experimental study on short-channel effects in side-gate SiC JFETs2019

    • Author(s)
      M. Nakajima, Q. Jin, M. Kaneko, and T. Kimoto
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Forward thermionic field emission current and barrier height lowering in heavily-doped 4H-SiC Schottky barrier diodes2019

    • Author(s)
      M. Hara, S. Asada, T. Maeda, and T. Kimoto
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Impacts of high-temperature annealing and thermal oxidation on electrical properties of high-purity semi-insulating 4H-SiC substrates grown by HTCVD2019

    • Author(s)
      C. Koo, M. Kaneko, and T. Kimoto
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Depth profiles of deep levels generated by ICP-RIE in 4H-SiC2019

    • Author(s)
      K. Kanegae, T. Okuda, M. Horita, J. Suda, and T. Kimoto
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Breakdown characteristics of lateral PIN diodes fully fabricated by ion implantation into HTCVD-grown high-purity semi-insulating SiC substrate2019

    • Author(s)
      M. Kaneko, A. Tsibizov, T. Kimoto, and U. Grossner
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Resistivity of high-purity semi-insulating 4H-SiC substrates2019

    • Author(s)
      C. Koo, M. Kaneko, and T. Kimoto
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Impacts of channel length on electrical characteristics in side-gate SiC JFETs2019

    • Author(s)
      M. Nakajima, Q. Jin, M. Kaneko, and T. Kimoto
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Breakdown phenomena in high- and low-voltage SiC devices2019

    • Author(s)
      T. Kimoto, X. Chi, Y. Zhao, H. Niwa, and M. Kaneko
    • Organizer
      Materials Research Meeting 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Defect electronics in SiC for high-voltage power devices and future prospects2019

    • Author(s)
      T. Kimoto
    • Organizer
      KIEEME-Silicon Carbide Conference
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 400℃ operation of normally-off n- and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate2018

    • Author(s)
      M. Nakajima, M. Kaneko, and T. Kimoto
    • Organizer
      European Conf. on Silicon Carbide and Related Materials 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Reduction of interface state density in SiC (0001) MOS structures by very-low-oxygen-partial-pressure annealing2018

    • Author(s)
      T. Kobayashi, K. Tachiki, K. Ito, Y. Matsushita, T. Kimoto
    • Organizer
      European Conf. on Silicon Carbide and Related Materials 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] SiC vertical-channel n- and p-JFETs fully fabricated by ion implantation2018

    • Author(s)
      M. Kaneko, U. Grossner, and T. Kimoto
    • Organizer
      European Conf. on Silicon Carbide and Related Materials 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Defect electronics in SiC for high-voltage power devices2018

    • Author(s)
      T. Kimoto, A. Iijima, S. Yamashita, and H. Niwa
    • Organizer
      4th Intensive Discussion on Growth of Nitride Semiconductors
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Patent(Industrial Property Rights)] SiC相補型電界効果トランジスタ2020

    • Inventor(s)
      金子光顕、木本恒暢
    • Industrial Property Rights Holder
      京都大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2020-104834
    • Filing Date
      2020
    • Related Report
      2020 Annual Research Report

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Published: 2018-04-23   Modified: 2022-01-27  

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