| Budget Amount *help |
¥44,330,000 (Direct Cost: ¥34,100,000、Indirect Cost: ¥10,230,000)
Fiscal Year 2020: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
Fiscal Year 2019: ¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
Fiscal Year 2018: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
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| Outline of Final Research Achievements |
We found that Co-Ti can decrease the growth rate of Co monosilicide (CoSi) that had an epitaxial relation with Si. By overlaying SiO2, SBH could be decreased from 0.7 to 0.3 eV. When TiO2 or TiNbO2 was used in place of SiO2, their small band offset could bring about a low SBH of 0.3 eV consistently. However, apparent contact resistivity remained high because of their high resistance. We also investigated the contact property of n-GaN. The growth of epitaxial Ga2O3 oxide on GaN could reduce DIGS, while the insulating property of the oxide could reduce MIGS, which brought about a very low SBH of 0.1 eV and three-orders lower contact resistivity than the samples without the oxide.
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