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Method of Crystal Growth Informatics

Research Project

Project/Area Number 18H03839
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Review Section Medium-sized Section 26:Materials engineering and related fields
Research InstitutionNagoya University

Principal Investigator

Ujihara Toru  名古屋大学, 未来材料・システム研究所, 教授 (60312641)

Co-Investigator(Kenkyū-buntansha) 佐藤 正英  金沢大学, 総合メディア基盤センター, 教授 (20306533)
原田 俊太  名古屋大学, 未来材料・システム研究所, 准教授 (30612460)
岡野 泰則  大阪大学, 基礎工学研究科, 教授 (90204007)
Project Period (FY) 2018-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥44,200,000 (Direct Cost: ¥34,000,000、Indirect Cost: ¥10,200,000)
Fiscal Year 2020: ¥14,950,000 (Direct Cost: ¥11,500,000、Indirect Cost: ¥3,450,000)
Fiscal Year 2019: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
Fiscal Year 2018: ¥14,820,000 (Direct Cost: ¥11,400,000、Indirect Cost: ¥3,420,000)
Keywords結晶成長 / プロセスインフォマティクス / SiC / 機械学習 / 最適化 / シミュレーション
Outline of Final Research Achievements

Materials development is said to take more than 20 years. The majority of this time is for process development. The ultimate objective of this research is to overwhelmingly increase the speed of process development using informatics technologies such as machine learning. We have achieved overwhelmingly high-quality SiC crystals using the solution-growth method. The next step is to increase the diameter of SiC crystals. The macrostep structure formed on the crystal growth surface is the key to achieve high quality. In this study, we first constructed a multi-physics simulation that reflects the relationship between macroscopic in-solution flow and macrostep structure. Next, by combining machine learning, we constructed a method to represent the surface structure in latent space.

Academic Significance and Societal Importance of the Research Achievements

ここで構築する方法論は、シミュレーションさえできれば、気相成長から溶液成長、バルク成長から薄膜成長まで、応用可能である。また、結晶成長に限るものではない。これらのプロセスにおいて、開発のスピードを遅らせてきた「最適化」、この最も時間を要していたところを一瞬にして突破できるようになる。さらに本研究では、シミュレーションと機械学習の一つである深層学習で、最適解を高速検索するシステムを開発する。結晶成長プロセスへの適用に際して二つの課題があり、一つはデータ不足であり、もう一つは「形状」の特徴量化である。これらを解決している。

Report

(4 results)
  • 2021 Final Research Report ( PDF )
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • Research Products

    (24 results)

All 2022 2021 2019 2018 Other

All Int'l Joint Research (3 results) Journal Article (7 results) (of which Int'l Joint Research: 4 results,  Peer Reviewed: 7 results) Presentation (13 results) (of which Int'l Joint Research: 10 results,  Invited: 10 results) Patent(Industrial Property Rights) (1 results)

  • [Int'l Joint Research] ビクトリア大学(カナダ)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] ニューヨーク州立大学(米国)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] University of Victoria(カナダ)

    • Related Report
      2018 Annual Research Report
  • [Journal Article] Geometrical design of a crystal growth system guided by a machine learning algorithm2021

    • Author(s)
      Yu Wancheng、Zhu Can、Tsunooka Yosuke、Huang Wei、Dang Yifan、Kutsukake Kentaro、Harada Shunta、Tagawa Miho、Ujihara Toru
    • Journal Title

      CrystEngComm

      Volume: 23 Issue: 14 Pages: 2695-2702

    • DOI

      10.1039/d1ce00106j

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth2021

    • Author(s)
      Dang Yifan、Zhu Can、Ikumi Motoki、Takaishi Masaki、Yu Wancheng、Huang Wei、Liu Xinbo、Kutsukake Kentaro、Harada Shunta、Tagawa Miho、Ujihara Toru
    • Journal Title

      CrystEngComm

      Volume: 23 Issue: 9 Pages: 1982-1990

    • DOI

      10.1039/d0ce01824d

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal2021

    • Author(s)
      TAKEHARA Yuto、SEKIMOTO Atsushi、OKANO Yasunori、UJIHARA Toru、DOST Sadik
    • Journal Title

      Journal of Thermal Science and Technology

      Volume: 16 Issue: 1 Pages: JTST0009-JTST0009

    • DOI

      10.1299/jtst.2021jtst0009

    • NAID

      130007965495

    • ISSN
      1880-5566
    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal2019

    • Author(s)
      Liu Xinbo、Zhu Can、Harada Shunta、Tagawa Miho、Ujihara Toru
    • Journal Title

      CrystEngComm

      Volume: 21 Issue: 47 Pages: 7260-7265

    • DOI

      10.1039/c9ce01338e

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method2019

    • Author(s)
      Wang L.、Horiuchi T.、Sekimoto A.、Okano Y.、Ujihara T.、Dost S.
    • Journal Title

      Journal of Crystal Growth

      Volume: 520 Pages: 72-81

    • DOI

      10.1016/j.jcrysgro.2019.05.017

    • Related Report
      2019 Annual Research Report 2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process2019

    • Author(s)
      Horiuchi Takashi、Wang Lei、Sekimoto Atsushi、Okano Yasunori、Ujihara Toru、Dost Sadik
    • Journal Title

      Journal of Crystal Growth

      Volume: 517 Pages: 59-63

    • DOI

      10.1016/j.jcrysgro.2019.04.001

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide2019

    • Author(s)
      Horiuchi Takashi、Wang Lei、Sekimoto Atsushi、Okano Yasunori、Yamamoto Takuya、Ujihara Toru、Dost Sadik
    • Journal Title

      Crystal Research and Technology

      Volume: 54 Issue: 5 Pages: 1900014-1900014

    • DOI

      10.1002/crat.201900014

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Presentation] デジタルツインを用いた結晶成長プロセス最適化技術(SiC溶液成長を中心に)2022

    • Author(s)
      宇治原徹
    • Organizer
      CVD反応分科会第35回シンポジウム
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 大口径SiC結晶成長のためのプロセスインフォマティクス技術の開発2021

    • Author(s)
      宇治原徹
    • Organizer
      先進セラミックス学振124委員会 第166回講演会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 溶液法による6インチSiC結晶の成長とそれに活用したプロセス・インフォマティクス技術2021

    • Author(s)
      宇治原徹
    • Organizer
      応用物理学会先進パワー半導体分科会第8回講演会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] Machine learning for SiC crystal growth (modeling, optimization and visualization)2019

    • Author(s)
      T. Ujihara
    • Organizer
      International Symposium & School on Crystal Growth Fundamentals
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Threading Screw Dislocations Conversion and Suppression of Inclusions in 3-inch 4° off-axis C-face 4H-SiC Solution Growth with Pure Si2019

    • Author(s)
      TAKAMA UNNO, CAN ZHU, SHUNTA HARADA, HARUHIKO KOIZUMI, MIHO TAGAWA, TORU UJIHARA
    • Organizer
      ICSCRM2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] The control of conduction type in high quality bulk solution growth of SiC2019

    • Author(s)
      Can Zhu, Shunta Harada, Miho Tagawa, Toru Ujihara
    • Organizer
      ICSCRM2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Application of high-quality SiC solution growth to large size crystal2019

    • Author(s)
      Can Zhu, Tomoki Endo, Takama Unno, Haruhiko Koizumi, Shunta Harada, Miho Tagawa, Toru Ujihara
    • Organizer
      ICSCRM2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] PREDICTION MODEL OF COMPUTATIONAL FLUID DYNAMICS BASED ON NEURAL NETWORK CONSTRUCTED BY MACHINE LEARNING AND PROCESS OPTIMIZATION OF SIC SOLUTION GROWTH2019

    • Author(s)
      T. Ujihara, Y. Tsunooka, H. Lin, C. Zhu, T. Narumi, K. Kutsukake, S. Harada, M. Tagawa
    • Organizer
      ICCGE-19
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Application of Machine Learning for High Quality SiC Crystal Growth2019

    • Author(s)
      T. Ujihara
    • Organizer
      the 5th International Conference on Advanced Electromaterials (ICAE 2019)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] The control of conduction type in high quality bulk solution growth of SiC2019

    • Author(s)
      Can Zhu, Shunta Harada, Miho Tagawa, Toru Ujihara
    • Organizer
      the International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Threading Screw Dislocations Conversion and Suppression of Inclusions in 3-inch 4° off-axis C-face 4H-SiC Solution Growth with Pure Si2019

    • Author(s)
      TAKAMA UNNO, CAN ZHU, SHUNTA HARADA, HARUHIKO KOIZUMI, MIHO TAGAWA, TORU UJIHARA
    • Organizer
      the International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] ESTIMATION OF HIGH-TEMPERATURE PHYSICAL PROPERTIES BY MACHINE LEARNING TOWARD ACCURATE NUMERICAL MODELING OF CRYSTAL GROWTH2019

    • Author(s)
      K. Ando, H. Lin, Y. Tsunooka, T. Narumi, C. Zhu, K. Kutsukake, S. Harada, K. Matsui, I. Takeuchi, Y. Koyama, Y. Kawajiri, M. Tagawa, T. Ujihara
    • Organizer
      the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] PREDICTION MODEL OF COMPUTATIONAL FLUID DYNAMICS BASED ON NEURAL NETWORK CONSTRUCTED BY MACHINE LEARNING AND PROCESS OPTIMIZATION OF SIC SOLUTION GROWTH2019

    • Author(s)
      T. Ujihara, Y. Tsunooka, H. Lin, C. Zhu, T. Narumi, K. Kutsukake, S. Harada, M. Tagawa
    • Organizer
      the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Patent(Industrial Property Rights)] 結晶成長条件の決定方法2018

    • Inventor(s)
      朱燦, 遠藤友樹, 原田俊太, 宇治原徹
    • Industrial Property Rights Holder
      朱燦, 遠藤友樹, 原田俊太, 宇治原徹
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Related Report
      2018 Annual Research Report

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Published: 2018-04-23   Modified: 2024-12-25  

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