| Budget Amount *help |
¥44,330,000 (Direct Cost: ¥34,100,000、Indirect Cost: ¥10,230,000)
Fiscal Year 2021: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2020: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2019: ¥12,350,000 (Direct Cost: ¥9,500,000、Indirect Cost: ¥2,850,000)
Fiscal Year 2018: ¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
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| Outline of Final Research Achievements |
In this project, we have aimed to develop new spin-dependent functionalities inherent to materials by using ultra-high quality single-crystal heterostructures. We have succeeded in extremely efficient spin-charge current conversion in oxide-based two-dimensional electron-gas systems. In semiconductor-based ferromagnetic materials, we have found that magnetization reversal occurs simply by applying a current through a single ferromagnetic layer. We have successfully observed magnetization reversal at the lowest current density ever reported for spin-orbit torque magnetization reversal. In oxide-based magnetic tunnel junctions, by using the unique density of states of the ferromagnetic oxide interface, we have discovered that 90-degree rotation of magnetization occurs at a current density about 8 orders of magnitude smaller than that required for metallic magnetic tunnel junctions. In summary, we have obtained various new fundamental findings that are promising for device applications.
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