| Budget Amount *help |
¥43,680,000 (Direct Cost: ¥33,600,000、Indirect Cost: ¥10,080,000)
Fiscal Year 2022: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
Fiscal Year 2021: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2020: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2019: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
Fiscal Year 2018: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
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| Outline of Final Research Achievements |
Extreme ultraviolet (EUV) radiation will be used as a light source in the high volume production of semiconductor devices. The EUV radiation with the wavelength of 13.5 nm is an ionizing radiation and capable of resolving 8 nm optical image. However, there is a barrier against the development of resist materials responding to 8 nm optical resolution. The scientific foundation for material design should be established. In this study, we clarified the reaction mechanism of EUV resists. The reactions induced in resist films by EUV were modeled for the development of simulation code based on Monte Carlo method. Using the developed simulation code, the resist patter formation was simulated for various parameter sets. Based on simulation results, the generation mechanism of stochastic defects was clarified. The defect risk indicator was also proposed. By applying the machine learning to the experimental and simulation data, the material design for single nano resists was obtained.
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