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酸化濃縮法を用いた高性能薄膜Ge-On-Insulator FETに関する研究

Research Project

Project/Area Number 18J14311
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Electron device/Electronic equipment
Research InstitutionThe University of Tokyo

Principal Investigator

JO KWANGWON  東京大学, 工学系研究科, 特別研究員(DC2)

Project Period (FY) 2018-04-25 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2019: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2018: ¥800,000 (Direct Cost: ¥800,000)
KeywordsGe-on-insulator / SiGe / Ge / Ge condensation / Compressive strain / Tensile strain / GOI / Strain / Ge condnesantion / pMOSFET / ETB
Outline of Annual Research Achievements

We propose and demonstrate a new channel strain control technology enabling to realize both high performance tensile strain Ge-on-insulator (GOI) n-MOSFETs and compressive strain GOI p-MOSFETs on a same substrate. It is found that additional oxidation at 850 oC after Ge condensation changes the strain condition in GOI from 1.8 % compressive strain to 0.5% tensile strain, resulting in the electron mobility enhancement of 2.1. Furthermore, thinning GOI channel thickness introduces significant mobility enhancement attributable to GOI band modulation, leading to electron mobility of 777 cm2/Vs in n-MOSFETs with GOI thickness of 2.5 nm. For performance enhancement of p-MOSFETs, (110)-oriented SGOI formation by Ge condensation is studied. It is found that SGOI with the Ge fraction of 54 % maximizes the hole mobility from the viewpoints of both strain and Ge fractions. Record high hole mobility of 837 cm2/Vs is demonstrated with compressive strain (110) 27-nm-thick Si0.46G0.54OI p-MOSFETs, compared with mobility in planar GOI/SGOI p-MOSFETs reported so far. In addition, high hole mobility of 295 cm2/Vs is still maintained for 5-nm-thick extremely-thin body (110) Si0.46G0.54OI p-MOSFETs.
As a result aforementioned contents of our research were reported at 2019 International Electron Devices Meeting (IEDM), which is one of most famous conferences in the research field.

Research Progress Status

令和元年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

令和元年度が最終年度であるため、記入しない。

Report

(2 results)
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • Research Products

    (13 results)

All 2020 2019 2018

All Journal Article (5 results) (of which Int'l Joint Research: 3 results,  Peer Reviewed: 3 results) Presentation (6 results) (of which Int'l Joint Research: 3 results) Funded Workshop (2 results)

  • [Journal Article] P-channel TFET Operation of Bilayer Structures with Type-II Hetero Tunneling Junction of Oxide- and Group-IV-Semiconductors2020

    • Author(s)
      K. Kato, K.W. Jo, H. Matsui, H. Tabata, T. Mori, Y. Morita, T. Matsukawa, M. Takenaka, S. Takagi
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 67 Issue: 4 Pages: 1880-1886

    • DOI

      10.1109/ted.2020.2975582

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation2019

    • Author(s)
      Jo K. - W.、Lim C.- M.、Kim W. - K.、Toprasertpong K.、Takenaka M.、Takagi S.
    • Journal Title

      IEDM conference paper

      Volume: 1 Pages: 1-3

    • DOI

      10.1109/iedm19573.2019.8993595

    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Journal Article] Impact of SiGe Layer Thickness in Starting Substrates on Strained Ge-on-Insulator pMOSFETs Fabricated by Ge Condensation Method2019

    • Author(s)
      K.-W. Jo, W.-K. Kim, M. Takenaka and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 114 Issue: 6 Pages: 062101-062101

    • DOI

      10.1063/1.5068713

    • Related Report
      2019 Annual Research Report 2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Hole mobility enhancement in extremely-thin-body strained GOI and SGOI pMOSFETs by improved Ge condensation method2018

    • Author(s)
      Jo K.-W.、Kim W.-K.、Takenaka M.、Takagi S.
    • Journal Title

      018 IEEE Symposium on VLSI Technology

      Volume: 1 Pages: 195-196

    • DOI

      10.1109/vlsit.2018.8510646

    • Related Report
      2018 Annual Research Report
  • [Journal Article] Ultrathin-body Ge-On-Insulator MOSFET and TFET technologies2018

    • Author(s)
      S. Takagi, W.-K. Kim, K.-W. Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae, K. Kato and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 86 Issue: 7 Pages: 75-86

    • DOI

      10.1149/08607.0075ecst

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Presentation] Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation2019

    • Author(s)
      KWANG-WON JO、Lim C.- M.、Kim W. - K.、Toprasertpong K.、Takenaka M.、Takagi S.
    • Organizer
      2019 IEEE International Electron Devices Meeting (IEDM)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Impact of SiGe Layer Thickness in Starting Substrates on Properties of Ultrathin Body Ge-on-insulator pMOSFETs fabricated by Ge Condensation2018

    • Author(s)
      Kwang-Won Jo, W.-K. Kim, M. Takenaka and S. Takagi
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Hole mobility enhancement in extremely-thin-body strained GOI and SGOI pMOSFETs by improved Ge condensation method2018

    • Author(s)
      Kwang-Won Jo, W.-K. Kim, M. Takenaka, and S. Takagi
    • Organizer
      Symposia on VLSI Technology
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Extremely-Thin Body GOI structures and MOSFETs2018

    • Author(s)
      S. Takagi, W.-K. Kim, Kwang-Won Jo, X. Yu and M. Takenaka
    • Organizer
      11th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI2018

    • Author(s)
      S. Takagi, K. Kato, W.-K. Kim, Kwang-Won Jo, R. Matsumura, R. Takaguchi, D.-H. Ahn, T. Gotow and M. Takenaka
    • Organizer
      48th European Solid-State Device Research Conference (ESSDERC)
    • Related Report
      2018 Annual Research Report
  • [Presentation] Ultrathin-body Ge-On-Insulator MOSFET and TFET technologies2018

    • Author(s)
      S. Takagi, W.-K. Kim, Kwang-Won Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae, K. Kato and M. Takenaka
    • Organizer
      AiMES 2018 (ECS and SMEQ Joint International Meeting)
    • Related Report
      2018 Annual Research Report
  • [Funded Workshop] SSDM20192019

    • Related Report
      2019 Annual Research Report
  • [Funded Workshop] 2018 IEEE International Electron Devices Meeting2018

    • Related Report
      2018 Annual Research Report

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Published: 2018-05-01   Modified: 2024-03-26  

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