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Investigation of spin transport phenomena in Si for application of spin device

Research Project

Project/Area Number 18J22869
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Electron device/Electronic equipment
Research InstitutionKyoto University

Principal Investigator

李 垂範  京都大学, 工学研究科, 特別研究員(DC1)

Project Period (FY) 2018-04-25 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 2020: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2019: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2018: ¥1,000,000 (Direct Cost: ¥1,000,000)
Keywordsスピントロニクス / シリコンスピントロニクス / 半導体スピントロニクス / スピン輸送 / 電気的スピン注入 / スピントランジスタ / スピン軌道相互作用 / ラシュバ / シリコン / スピン注入
Outline of Annual Research Achievements

スピン-軌道相互作用はスピン流-電流相互変換や外部磁場を使わないスピン流の電気的な操作などに用いられる.さらに,スピン-軌道相互作用は小さいエネルギースケールを持ち,基礎物理から応用まで広い範囲で注目を浴びている.これまでは既にスピン-軌道相互作用が内在されている重金属系,低次元電子系や物質,閃亜鉛鉱構造の結晶などがスピン-軌道相互作用の主な研究対象であった.一方で,シリコンはその小さい原子番号(14番)と結晶の空間反転対称性により,スピン-軌道相互作用の研究領域では研究対象として排除されてきた.しかし,シリコンスピンデバイスのチャネルはゲート電圧を印加するため金属/酸化物/半導体(MOS)構造となっており,このMOS構造でシリコンと二酸化シリコンの界面は空間反転対称性が敗れていることに着目した.シリコン/二酸化シリコンのMOS構造でゲート電圧を印加すると2次元の電子層が生成される且つ,面直方向に電界が生じるため,界面由来のスピン-軌道相互作用が発現するための条件を充足させる.
令和2年度の研究では,シリコンスピンデバイスにおける電子のスピンとその軌道間の相互作用に調査した.スピン-軌道相互作用の証拠としてスピン寿命がスピン方向に依存して異なるスピン寿命の異方性を,外部電界(ゲート電圧)を印加しながら評価した.その結果,シリコンスピンデバイスでゲート電圧を印加することでスピン寿命の異方性が変化することが観測された.この結果はシリコン/二酸化シリコンの界面由来のスピン-軌道相互作用が人工的に引き起こされたことを示唆する初めての報告である.

Research Progress Status

令和2年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

令和2年度が最終年度であるため、記入しない。

Report

(3 results)
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • Research Products

    (15 results)

All 2020 2019 2018

All Journal Article (7 results) (of which Peer Reviewed: 7 results,  Open Access: 2 results) Presentation (8 results) (of which Int'l Joint Research: 4 results)

  • [Journal Article] Enhancement of spin signals by thermal annealing in silicon-based lateral spin valves2020

    • Author(s)
      Yamashita N.、Lee S.、Ohshima R.、Shigematsu E.、Koike H.、Suzuki Y.、Miwa S.、Goto M.、Ando Y.、Shiraishi M.
    • Journal Title

      AIP Advances

      Volume: 10 Issue: 9 Pages: 095021-095021

    • DOI

      10.1063/5.0022160

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves2020

    • Author(s)
      Koike Hayato、Lee Soobeom、Ohshima Ryo、Shigematsu Ei、Goto Minori、Miwa Shinji、Suzuki Yoshishige、Sasaki Tomoyuki、Ando Yuichiro、Shiraishi Masashi
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 8 Pages: 083002-083002

    • DOI

      10.35848/1882-0786/aba22c

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Gate-Tunable Spin xor Operation in a Silicon-Based Device at Room Temperature2020

    • Author(s)
      Ishihara Ryoma、Ando Yuichiro、Lee Soobeom、Ohshima Ryo、Goto Minori、Miwa Shinji、Suzuki Yoshishige、Koike Hayato、Shiraishi Masashi
    • Journal Title

      Physical Review Applied

      Volume: 13 Issue: 4 Pages: 1-9

    • DOI

      10.1103/physrevapplied.13.044010

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Investigation of gating effect in Si spin MOSFET2020

    • Author(s)
      Soobeom Lee, Fabien Rortais, Ryo Ohshima, Yuichiro Ando, Minori Goto, Shinji Miwa, Yoshishige Suzuki, Hayato Koike, and Masashi Shiraishi
    • Journal Title

      Applied Physics Letters

      Volume: 116 Issue: 2 Pages: 022403-022403

    • DOI

      10.1063/1.5131823

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Stability of spin XOR gate operation in silicon based lateral spin device with large variations in spin transport parameters2019

    • Author(s)
      Ryoma Ishihara, Soobeom Lee, Yuichiro Ando, Ryo Ohshima, Minori Goto, Shinji Miwa, Yoshishige Suzuki, Hayato Koike, and Masashi Shiraishi
    • Journal Title

      AIP Advances

      Volume: 9 Issue: 12 Pages: 125326-125326

    • DOI

      10.1063/1.5129980

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a nondegenerate Si-based spin valve2019

    • Author(s)
      Lee Soobeom、Rortais Fabien、Ohshima Ryo、Ando Yuichiro、Miwa Shinji、Suzuki Yoshishige、Koike Hayato、Shiraishi Masashi
    • Journal Title

      Physical Review B

      Volume: 99 Issue: 6

    • DOI

      10.1103/physrevb.99.064408

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Spin-orbit coupling induced by bismuth doping in silicon thin films2018

    • Author(s)
      F. Rortais, S. Lee, R. Ohshima, S. Dushenko, Y. Ando, and M. Shiraishi
    • Journal Title

      Applied Physics Letters

      Volume: 113 Issue: 12 Pages: 122408-122408

    • DOI

      10.1063/1.5046781

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Presentation] Electric gating effect in Si spin MOSFET2019

    • Author(s)
      S. Lee, F. Rortais, R. Ohshima, Y. Ando, Y. Suzuki, H. Koike, and M. Shiraishi
    • Organizer
      International Symposium on Photonics and Electronics Science and Engineering 2020
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Understanding of mechanism for gate-controlled spin accumulation in Si-based lateral spin valve2019

    • Author(s)
      S. Lee, F. Rortais, R. Ohshima, Y. Ando, Y. Suzuki, H. Koike, and M. Shiraishi
    • Organizer
      The 64th Annual Conference on MMM
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Investigation of anisotropy of spin relaxation in Si-based lateral spin valve2019

    • Author(s)
      Soobeom Lee, Fabien Rortais, Ryo Ohshima, Yuichiro Ando, Minori Goto, Shinji Miwa, Yoshishige Suzuki, Hayato Koike, Masashi Shiraishi
    • Organizer
      第67回応用物理学会春季講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Gate voltage dependence of local spin accumulation voltage in Si-based lateral spin valve2019

    • Author(s)
      Soobeom Lee, Fabien Rortais, Ryo Ohshima, Yuichiro Ando, Yoshishige Suzuki, Hayato Koike and Masashi Shiraishi
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Bias dependence of spin accumulation voltages in non-degenerate Si spin valves2019

    • Author(s)
      S. Lee, F. Rortais, R. Ohshima, Y. Ando, S. Miwa, Y. Suzuki, H. Koike and M. Shiraishi
    • Organizer
      APS March Meeting
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Bias dependence of spin signals in Si spin MOSFET2018

    • Author(s)
      S. Lee, F. Rortais, Y. Ando, S. Miwa, Y. Suzuki, H. Koike and M. Shiraishi
    • Organizer
      10th Physics and Applications of Spin Phenomena in Solids
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Bias dependence of spin signals in Si spin MOSFET2018

    • Author(s)
      S. Lee, F. Rortais, Y. Ando, S. Miwa, Y. Suzuki, H. Koike and M. Shiraishi
    • Organizer
      日本物理瓦解2018年秋季大会
    • Related Report
      2018 Annual Research Report
  • [Presentation] SiスピンMOSFETでのスピン信号のバイアス依存性2018

    • Author(s)
      S. Lee, F. Rortais, R. Ohshima, Y. Ando, S. Miwa, Y. Suzuki, H. Koike and M. Shiraishi
    • Organizer
      第37回電子材料シンポジウム
    • Related Report
      2018 Annual Research Report

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Published: 2018-05-01   Modified: 2024-03-26  

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