Study on ferroelectric HfxZr1-xO2 ultra-thin films fabricated using atomic layer deposition for three-dimensional device applications

• Project/Area Number: 18J22998
• Research Category: Grant-in-Aid for JSPS Fellows
• Allocation Type: Single-year Grants
• Section: 国内
• Research Field: Electronic materials/Electric materials
• Research Institution: Meiji University
• Principal Investigator: 女屋 崇 明治大学, 明治大学大学院 理工学研究科, 特別研究員(DC1)
• Project Period (FY): 2018-04-25 – 2021-03-31
• Project Status: Completed (Fiscal Year 2020)
• Budget Amount: ¥2,200,000 (Direct Cost: ¥2,200,000); Fiscal Year 2020: ¥700,000 (Direct Cost: ¥700,000); Fiscal Year 2019: ¥700,000 (Direct Cost: ¥700,000); Fiscal Year 2018: ¥800,000 (Direct Cost: ¥800,000)
• Keywords: ハフニウムジルコニウム酸化膜 / ハフニア / ジルコニア / 強誘電体 / 原子層堆積法 / プラズマ原子層堆積法 / 低温形成 / 疲労特性 / 極薄膜 / 核生成層

Outline of Annual Research Achievements

本年度は、HfxZr1-xO2 (HZO)膜の結晶構造制御及び強誘電性の向上に寄与するZrO2膜を用いた(a) HZO/ZrO2積層膜による強誘電体HZO膜の信頼性の改善、及び(b) 強誘電体HZO膜の低温形成技術確立へ向けた原子層堆積(ALD)法における酸化剤ガスの検討に取り組んだ。
(a) 先行研究で培った知識を生かして高耐圧且つ良好な強誘電性を維持したHZO/ZrO2積層膜を作製して、実デバイス応用へ向けたこれらHZO/ZrO2積層膜の有用性を実証した。また、実用上有益な長期信頼性に関しても評価を加え、新たな強誘電体不揮発性メモリの実現に資する有益な成果が得られたことは大きな発展である。
(b) 酸化剤ガスとして各々H2O及びO2プラズマを用いた熱及びプラズマALD法、及び300~400°Cの低温熱処理によりHZO膜を形成して、放射光Ｘ線源を用いた詳細な結晶構造解析に取り組んだ。ALD法による成膜時の酸化剤ガス及び熱処理温度が強誘電相である直方晶相の形成に及ぼす効果を詳細に評価したことで、実験室系X線回折による結晶構造評価では困難であったHZO膜の結晶構造と強誘電性の重要な関係を解明した。また、低温形成技術確立へ向けたHZO膜の成膜手法としてプラズマALD法が有効であると結論付けた。
以上の成果は、学術論文だけでなく、国際・国内会議で積極的に報告した。また、MANA International Symposium 2021では、Excellent Poster Presentation Awardを受賞したことから、これらHZO膜の新たな作製技術が世界的に関心を集めている結果であると考えている。
なお、これらの研究は、テキサス大学ダラス校、ブルックヘブン国立研究所及び国立研究開発法人 物質・材料研究機構との共同研究によって実施された。

Research Progress Status

令和2年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

令和2年度が最終年度であるため、記入しない。

Research Products

• [Int'l Joint Research] The University of Texas at Dallas/Brookhaven National Laboratory(米国)
• [Int'l Joint Research] The University of Texas at Dallas/Brookhaven National Laboratory(米国)
• [Journal Article] Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis (2021)
  • Author(s): Onaya Takashi、Nabatame Toshihide、Jung Yong Chan、Hernandez-Arriaga Heber、Mohan Jaidah、Kim Harrison Sejoon、Sawamoto Naomi、Nam Chang-Yong、Tsai Esther H. R.、Nagata Takahiro、Kim Jiyoung、Ogura Atsushi
  • Journal Title: APL Materials Volume: 9 Issue: 3 Pages: 031111-031111
  • DOI: 10.1063/5.0035848
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon (2021)
  • Author(s): Mohan Jaidah、Hernandez-Arriaga Heber、Jung Yong Chan、Onaya Takashi、Nam Chang-Yong、Tsai Esther H. R.、Kim Si Joon、Kim Jiyoung
  • Journal Title: Applied Physics Letters Volume: 118 Issue: 10
  • DOI: 10.1063/5.0035579
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress (2021)
  • Author(s): Kobayashi Riku、Nabatame Toshihide、Onaya Takashi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Tsukagoshi Kazuhito、Ogura Atsushi
  • Journal Title: Japanese Journal of Applied Physics Volume: 60 Issue: SC Pages: SCCM01-SCCM01
  • DOI: 10.35848/1347-4065/abe685
  • Peer Reviewed
• [Journal Article] Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3 (2021)
  • Author(s): Kobayashi Riku、Nabatame Toshihide、Onaya Takashi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Tsukagoshi Kazuhito、Ogura Atsushi
  • Journal Title: Japanese Journal of Applied Physics Volume: 60 Issue: 3 Pages: 030903-030903
  • DOI: 10.35848/1347-4065/abde54
  • Peer Reviewed
• [Journal Article] Overseas Research and Life in Texas (2020)
  • Author(s): ONAYA Takashi
  • Journal Title: Vacuum and Surface Science Volume: 63 Issue: 2 Pages: 84-85
  • DOI: 10.1380/vss.63.84
  • NAID: 130007796324
  • ISSN: 2433-5835, 2433-5843
  • Year and Date: 2020-02-10
• [Journal Article] Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1-xO2/ZrO2 bilayer by atomic layer deposition (2020)
  • Author(s): Onaya Takashi、Nabatame Toshihide、Inoue Mari、Jung Yong Chan、Hernandez-Arriaga Heber、Mohan Jaidah、Kim Harrison Sejoon、Sawamoto Naomi、Nagata Takahiro、Kim Jiyoung、Ogura Atsushi
  • Journal Title: Applied Physics Letters Volume: 117 Issue: 23 Pages: 232902-232902
  • DOI: 10.1063/5.0029709
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1-XO2/ZrO2 Bi-layer (2020)
  • Author(s): Onaya Takashi、Nabatame Toshihide、Inoue Mari、Jung Yong Chan、Hernandez-Arriaga Heber、Mohan Jaidah、Kim Harrison Sejoon、Sawamoto Naomi、Nagata Takahiro、Kim Jiyoung、Ogura Atsushi
  • Journal Title: ECS Transactions Volume: 98 Issue: 3 Pages: 63-70
  • DOI: 10.1149/09803.0063ecst
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Improvement in ferroelectricity of HfxZr1-xO2 thin films using top- and bottom-ZrO2 nucleation layers (2019)
  • Author(s): Onaya Takashi、Nabatame Toshihide、Sawamoto Naomi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Ogura Atsushi
  • Journal Title: APL Materials Volume: 7 Issue: 6 Pages: 061107-061107
  • DOI: 10.1063/1.5096626
  • Peer Reviewed / Open Access
• [Journal Article] Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition (2019)
  • Author(s): Onaya Takashi、Nabatame Toshihide、Sawamoto Naomi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Ogura Atsushi
  • Journal Title: Microelectronic Engineering Volume: 215 Pages: 111013-111013
  • DOI: 10.1016/j.mee.2019.111013
  • Peer Reviewed
• [Journal Article] Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress (2019)
  • Author(s): Kurishima Kazunori、Nabatame Toshihide、Onaya Takashi、Tsukagoshi Kazuhito、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Ogura Atsushi
  • Journal Title: 2019 Electron Devices Technology and Manufacturing Conference (EDTM) Volume: - Pages: 74-76
  • DOI: 10.1109/edtm.2019.8731167
  • Peer Reviewed
• [Journal Article] Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3 (2019)
  • Author(s): Kobayashi Riku、Nabatame Toshihide、Kurishima Kazunori、Onaya Takashi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Tsukagoshi Kazuhito、Ogura Atsushi
  • Journal Title: ECS Transactions Volume: 92 Issue: 3 Pages: 3-13
  • DOI: 10.1149/09203.0003ecst
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Improved leakage current properties of ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors (2018)
  • Author(s): Onaya Takashi、Nabatame Toshihide、Sawada Tomomi、Kurishima Kazunori、Sawamoto Naomi、Ohi Akihiko、Chikyow Toyohiro、Ogura Atsushi
  • Journal Title: Thin Solid Films Volume: 655 Pages: 48-53
  • DOI: 10.1016/j.tsf.2018.02.010
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Ferroelectricity of HfxZr1?xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniques (2018)
  • Author(s): Onaya Takashi, Nabatame Toshihide, Sawamoto Naomi, Kurishima Kazunori, Ohi Akihiko, Ikeda Naoki, Nagata Takahiro, Ogura Atsushi
  • Journal Title: ECS Transactions Volume: 86 Issue: 6 Pages: 31-38
  • DOI: 10.1149/08606.0031ecst
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Reliability of Al2O3/In-Si-O-C Thin-Film Transistors with an Al2O3 Passivation Layer under Gate-Bias Stress (2018)
  • Author(s): Kurishima Kazunori、Nabatame Toshihide、Onaya Takashi、Tsukagoshi Kazuhito、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Ogura Atsushi
  • Journal Title: ECS Transactions Volume: 86 Issue: 11 Pages: 135-145
  • DOI: 10.1149/08611.0135ecst
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Presentation] パルス測定法による低温度作製したHfxZr1－xO2薄膜の強誘電体スイッチング特性及び分極疲労メカニズムの研究 (2021)
  • Author(s): 女屋 崇, 生田目 俊秀, 井上 万里, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, 澤本 直美, 長田 貴弘, Jiyoung Kim, 小椋 厚志
  • Organizer: 電子デバイス界面テクノロジー研究会 －材料・プロセス・デバイス特性の物理－ (第26回研究会)
• [Presentation] 放射光X線による低温形成したHfxZr1－xO2薄膜の直方晶相同定の検討 (2021)
  • Author(s): 女屋 崇, 生田目 俊秀, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, 澤本 直美, Chang-Yong Nam, Esther H. R. Tsai, 長田 貴弘, Jiyoung Kim, 小椋 厚志
  • Organizer: 第68回応用物理学会春季学術講演会
• [Presentation] Control of ferroelectric phase formation in HfxZr1－xO2 thin films using nano-ZrO2 nucleation layer technique (2021)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, and Atsushi Ogura
  • Organizer: MANA International Symposium 2021
  • Int'l Joint Research
• [Presentation] HfxZr1－xO2/ZrO2積層構造による強誘電体厚膜の強誘電性の向上 (2020)
  • Author(s): 女屋 崇, 生田目 俊秀, 井上 万里, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, 澤本 直美, 長田 貴弘, Jiyoung Kim, 小椋 厚志
  • Organizer: 第81回応用物理学会秋季学術講演会
• [Presentation] Air及びN2雰囲気のバイアスストレスによるアモルファスCarbon-doped In2O3TFTのトランジスタ特性 (2020)
  • Author(s): 小林 陸, 生田目 俊秀, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志
  • Organizer: 第81回応用物理学会秋季学術講演会
• [Presentation] Ferroelectricity of 300°C Low Temperature Fabricated HfxZr1－xO2 Thin Films by Plasma-Enhanced Atomic Layer Deposition using Hf/Zr Cocktail Precursor (2020)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, Ava Khosravi, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Robert M. Wallace, Jiyoung Kim, and Atsushi Ogura
  • Organizer: 20th International Conference on Atomic Layer Deposition (ALD 2020)
  • Int'l Joint Research
• [Presentation] Ferroelectricity of Ferroelectric HfxZr1－xO2/Antiferroelectric ZrO2 Stack Structure Fabricated by Atomic Layer Deposition (2020)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, Ava Khosravi, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Robert M. Wallace, Jiyoung Kim, and Atsushi Ogura
  • Organizer: 20th International Conference on Atomic Layer Deposition (ALD 2020)
  • Int'l Joint Research
• [Presentation] Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1－xO2/ZrO2 Bi-layer (2020)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, and Atsushi Ogura
  • Organizer: Pacific Rim Meeting on Electrochemical and Solid State Science 2020 (PRiME 2020)
  • Int'l Joint Research
• [Presentation] Possibility of Above 20-nm-Thick HfxZr1－xO2/ZrO2 and HfxZr1－xO2/HfO2 Bilayers for High Polarization and Breakdown Voltage (2020)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, and Atsushi Ogura
  • Organizer: 51st IEEE Semiconductor Interface Specialists Conference (SISC 2020)
  • Int'l Joint Research
• [Presentation] Study of ALD HfO2-based high-k for GaN power devices and Ferroelectric devices (2020)
  • Author(s): Toshihide Nabatame, Takashi Onaya, Erika Maeda, Masashi Hirose, Yoshihiro Irokawa, Koji Shiozaki, and Yasuo Koide
  • Organizer: 20th International Conference on Atomic Layer Deposition (ALD 2020)
  • Int'l Joint Research / Invited
• [Presentation] The effect of oxygen source on ferroelectricity of atomic layer deposited Hf0.5Zr0.5O2 thin film (2020)
  • Author(s): Yong Chan Jung, Jaidah Mohan, Harrison S. Kim, Heber Hernandez-Arriga, Takashi Onaya, Kihyun Kim, Namhun Kim, Si Joon Kim, Atsushi Ogura, Rino Choi, Jinho Ahn, and Jiyoung Kim
  • Organizer: 20th International Conference on Atomic Layer Deposition (ALD 2020)
  • Int'l Joint Research
• [Presentation] A Combinatorial Approach to the Ferroelectric Properties in HfxZr1-xO2 Deposited by Atomic Layer Deposition (2020)
  • Author(s): Jaidah Mohan, Si Joon Kim, Heber Hernandez-Arriga, Yong Chan Jung, Takashi Onaya, Harrison S. Kim, Namhun Kim, Kihyun Kim, Atsushi Ogura, Rino Choi, Myung Mo Sung, and Jiyoung Kim
  • Organizer: 20th International Conference on Atomic Layer Deposition (ALD 2020)
  • Int'l Joint Research
• [Presentation] Investigation of Hydrogen Effect on Ferroelectricity of Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Film (2020)
  • Author(s): Yong Chan Jung, Jaidah Mohan, Harrison S. Kim, Heber Hernandez-Arriga, Takashi Onaya, Kihyun Kim, Namhun Kim, Si Joon Kim, Atsushi Ogura, Rino Choi, Jinho Ahn, and Jiyoung Kim
  • Organizer: Pacific Rim Meeting on Electrochemical and Solid State Science 2020 (PRiME 2020)
  • Int'l Joint Research
• [Presentation] Influence of adsorbed O2 on the gate-bias stress stability of back-gate-type TFT with carbon-doped In2O3 channel (2020)
  • Author(s): Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, and Atsushi Ogura
  • Organizer: 33rd International Microprocesses and Nanotechnology Conference (MNC 2020)
  • Int'l Joint Research
• [Presentation] プラズマ原子層堆積法で300 °C低温形成した強誘電体HfxZr1-xO2薄膜の疲労特性 (2020)
  • Author(s): 女屋 崇, 生田目 俊秀, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, Ava Khosravi, 澤本 直美, 長田 貴弘, Robert M. Wallace, Jiyoung Kim, 小椋 厚志
  • Organizer: 第67回応用物理学会春季学術講演会
• [Presentation] ALD法で作製したC-doped及びC-free In2O3膜をチャネルとした酸化物TFTの比較 (2020)
  • Author(s): 小林 陸, 生田目 俊秀, 栗島 一徳, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志
  • Organizer: 電子デバイス界面テクノロジー研究会 －材料・プロセス・デバイス特性の物理－ (第25回研究会)
• [Presentation] NBS及びPBSによるアモルファスCarbon-doped In2O3 TFTの信頼性評価 (2020)
  • Author(s): 小林 陸, 生田目 俊秀, 栗島 一徳, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志
  • Organizer: 第67回応用物理学会春季学術講演会
• [Presentation] Ferroelectricity of HfxZr1-xO2 thin films fabricated using plasma-enhanced atomic layer deposition and low temperature annealing process (2019)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, and Atsushi Ogura
  • Organizer: 21th Conference of Insulating Films on Semiconductors (INFOS 2019)
  • Int'l Joint Research
• [Presentation] Reliability of Ferroelectric HfxZr1-xO2 Thin Films Using 300°C Low Temperature Process with Plasma-Enhanced Atomic Layer Deposition (2019)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, Ava Khosravi, Naomi Sawamoto, Takahiro Nagata, Robert M. Wallace, Jiyoung Kim, and Atsushi Ogura
  • Organizer: 50th IEEE Semiconductor Interface Specialists Conference (SISC 2019)
  • Int'l Joint Research
• [Presentation] Comparison of Reliability of Ferroelectric HfxZr1-xO2 Thin Films Fabricated by Several Processes with Plasma-Enhanced and Thermal Atomic Layer Deposition (2019)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, Ava Khosravi, Naomi Sawamoto, Takahiro Nagata, Robert M. Wallace, Jiyoung Kim, and Atsushi Ogura
  • Organizer: The 19th Annual Non-Volatile Memory Technology Symposium (NVMTS 2019)
  • Int'l Joint Research
• [Presentation] Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3 (2019)
  • Author(s): Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, and Atsushi Ogura
  • Organizer: 236th ECS Meeting, G02-1127 (Oral)
  • Int'l Joint Research
• [Presentation] Characteristics of Oxide TFT with Amorphous Carbon-Doped In2O3 Channel Using 150 °C Low Temperature Process with ALD and O3 Annealing (2019)
  • Author(s): Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, and Atsushi Ogura
  • Organizer: 2019 International Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (2019 IWDTF)
  • Int'l Joint Research
• [Presentation] 低温ALD法で作製したCドープIn2O3膜を用いた酸化物TFTの特性 (2019)
  • Author(s): 小林 陸, 生田目 俊秀, 栗島 一徳, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志
  • Organizer: 第80回応用物理学会秋季学術講演会
• [Presentation] 原子層堆積法の酸化剤ガスが強誘電体HfxZr1－xO2薄膜の低温形成へ及ぼす効果 (2019)
  • Author(s): 女屋 崇, 生田目 俊秀, 澤本 直美, 大井 暁彦, 池田 直樹, 長田 貴弘, 小椋 厚志
  • Organizer: 電子デバイス界面テクノロジー研究会 －材料・プロセス・デバイス特性の物理－ (第24回研究会)
• [Presentation] 300 °C低温形成したHfxZr1－xO2薄膜の強誘電性 (2019)
  • Author(s): 女屋 崇, 生田目 俊秀, 澤本 直美, 大井 暁彦, 池田 直樹, 長田 貴弘, 小椋 厚志
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress (2019)
  • Author(s): Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhiko Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
  • Organizer: 3rd Electron Devices Technology and Manufacturing (EDTM) Conference 2019
  • Int'l Joint Research
• [Presentation] 低温度ALD法を用いてAl2O3及びSiO2下地基板へ形成したIn2O3膜の特性 (2019)
  • Author(s): 小林 陸, 生田目 俊秀, 栗島 一徳, 木津 たきお, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志
  • Organizer: 電子デバイス界面テクノロジー研究会 －材料・プロセス・デバイス特性の物理－ (第24回研究会)
• [Presentation] Al2O3パッシベーション膜によるIn-Si-O-C TFTの正負バイアスストレス特性の改善 (2019)
  • Author(s): 栗島 一徳, 生田目 俊秀, 女屋 崇, 塚越 一仁, 大井 暁彦, 池田 直樹, 長田 貴弘, 小椋 厚志
  • Organizer: 電子デバイス界面テクノロジー研究会 －材料・プロセス・デバイス特性の物理－ (第24回研究会)
• [Presentation] Effect of ZrO2 Capping-layer on Ferroelectricity of HfxZr1－xO2 Thin Films by ALD Using Hf/Zr Cocktail Precursor (2018)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow, Atsushi Ogura
  • Organizer: 18th International Conference on Atomic Layer Deposition (ALD 2018)
  • Int'l Joint Research
• [Presentation] Impact of Top-ZrO2 Nucleation Layer on Ferroelectricity of HfxZr1－xO2 Thin Films for Ferroelectric Field Effect Transistor Application (2018)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Kazunori Kurishima, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
  • Organizer: 2018 International Conference on Solid State Devices and Materials (SSDM2018)
  • Int'l Joint Research
• [Presentation] Ferroelectricity of HfxZr1－xO2 Thin Films Fabricated Using TiN Stressor Layer and ZrO2 Nucleation Layer (2018)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Kazunori Kurishima, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
  • Organizer: Americas International Meeting on Electrochemistry and Solid State Science (AiMES 2018)
  • Int'l Joint Research
• [Presentation] Improvement of Ferroelectricity of HfxZr1－xO2 Thin Films by New ZrO2 Nucleation Technique (2018)
  • Author(s): Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
  • Organizer: 49th IEEE Semiconductor Interface Specialists Conference (SISC 2018)
  • Int'l Joint Research
• [Presentation] ナノZrO2核生成層を用いた強誘電体HfxZr1－xO2薄膜の作製技術 (2018)
  • Author(s): 女屋 崇、生田目 俊秀、澤本 直美、大井 暁彦、池田 直樹、長田 貴弘、小椋 厚志
  • Organizer: 第79回応用物理学会秋季学術講演会
  • Invited
• [Presentation] Reliability of Al2O3/In-Si-O-C Thin-Film Transistors with an Al2O3 Passivation Layer under Gate-Bias Stress (2018)
  • Author(s): Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhiko Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
  • Organizer: Americas International Meeting on Electrochemistry and Solid State Science (AiMES 2018)
  • Int'l Joint Research
• [Presentation] ZrO2シード層による強誘電体HfxZr1-xO2薄膜形成 (2018)
  • Author(s): 生田目 俊秀, 女屋 崇, 澤本 直美、大井 暁彦, 池田 直樹, 小椋 厚志
  • Organizer: 第79回応用物理学会秋季学術講演会
  • Invited
• [Presentation] NBIS測定によるAl2O3パッシベーション膜を用いたIn1-xSixO1-yCy TFTの信頼性評価 (2018)
  • Author(s): 栗島 一徳, 生田目 俊秀, 女屋 崇, 塚越 一仁, 大井 暁彦, 池田 直樹, 長田 貴弘, 小椋 厚志
  • Organizer: 第79回応用物理学会秋季学術講演会