Interface structure and in-plane spin transport in MnAs/III-V-based heterostructures on (111)B

• Project/Area Number: 18K04227
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Japan Advanced Institute of Science and Technology
• Principal Investigator: Akabori Masashi 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 准教授 (50345667)
• Project Period (FY): 2018-04-01 – 2021-03-31
• Project Status: Completed (Fiscal Year 2020)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2020: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2019: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2018: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
• Keywords: スピン軌道結合 / MnAs/InAs / スピンバルブ素子 / 界面構造 / 面内スピン伝播 / 分子線エピタキシー / MnAs / InAs / 非局所

Outline of Final Research Achievements

We have studied MnAs/InAs heterostructures on GaAs(111)B for spin field-effect transistors based on hybrid structures consisting of semiconductor channel with large spin-orbit coupling and ferromagnetic metal electrodes. In the present study, we first found the enhancement of spin signals and injection efficiency in local and non-local spin valve devices by increasing measurement temperatures. Then we obtained the information of lattice relaxation around heterointerfaces by RHEED and STEM. Also we confirmed tunneling effect in vertical transport, and metal direct patterning by N2 GFIS-FIB.

Academic Significance and Societal Importance of the Research Achievements

本研究の成果は、将来の量子情報処理などを担う可能性がある、半導体をベースとしたスピンデバイスの実現に寄与するものである。本研究はナノテクノロジーをベースとしており、半導体InAs・GaAsと強磁性体MnAsを組み合わせた新構造の開発および構造評価や、新構造をもとにしたスピンデバイス開発および特性評価と多岐に渡っており、マテリアルサイエンス、ナノテクノロジー、スピントロニクスの発展にも貢献している。

Research Products

• [Int'l Joint Research] CAC(アルゼンチン)
• [Int'l Joint Research] CNRS(フランス)
• [Journal Article] Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature (2021)
  • Author(s): Helman C.、Camjayi A.、Islam E.、Akabori M.、Thevenard L.、Gourdon C.、Tortarolo M.
  • Journal Title: Physical Review B Volume: 103 Issue: 13
  • DOI: 10.1103/physrevb.103.134408
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature (2019)
  • Author(s): Islam Md. Earul、Hayashida Kazuki、Akabori Masashi
  • Journal Title: AIP Advances Volume: 9 Issue: 11 Pages: 115215-115215
  • DOI: 10.1063/1.5126242
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Presentation] 分子線エピタキシーにより成長したMnAs/GaAs/InAs/GaAs(111)Bハイブリッド構造における界面周辺での格子緩和 (2020)
  • Author(s): 金塚渉 、赤堀誠志 、陳桐民 、大島義文
  • Organizer: 令和二年度 応用物理学会 北陸・信越支部 学術講演会
• [Presentation] MATERIALS STUDY FOR SPIN FIELD EFFECT TRANSISTORS USING MOLECULAR BEAM EPITAXY (2018)
  • Author(s): Masashi Akabori, Md. Earul Islam, Dat Quoc Tran
  • Organizer: 11th Scientific Conference of University of Science, Viet Nam National University Ho Chi Minh City
  • Invited