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Development of basic process for fabrication of large single crystals of hexagonal boron nitride in wafer shape

Research Project

Project/Area Number 18K04231
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionShizuoka University

Principal Investigator

Hara Kazuhiko  静岡大学, 電子工学研究所, 教授 (80202266)

Project Period (FY) 2018-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2020: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2019: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2018: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Keywords六方晶窒化ホウ素 / 化学気相法 / 薄膜 / エピタキシャル成長 / 固有励起子発光 / 薄膜成長 / サファイア基板 / シリコン基板 / 窒化ホウ素 / 結晶成長
Outline of Final Research Achievements

In terms of process development for the fabrication of hexagonal boron nitride (h-BN) single crystals in wafer form, the final goal has not been achieved because the grain structure of the thin film was not improved to the target level. On the other hand, it is considered technologically significant that the quality of h-BN thin film on sapphire and Si substrates have been improved to the point where it shows the world's highest level of luminescence properties. Specifically, the results of this research can be summarized as follows: (1) fabrication of a sample that shows band-edge luminescence equivalent to that of high-quality bulk crystals by controlling the growth pressure, (2) significant reduction of carbon impurities in the thin film by improving the CVD equipment to a cold-wall type, and (3) the first observation of intrinsic exciton emission from a thin film grown on a Si substrate.

Academic Significance and Societal Importance of the Research Achievements

サファイアおよびSiを基板とする六方晶窒化ホウ素(h-BN)薄膜としては世界最高レベルの発光特性を示すまで高品質化が図られたことは学術的に有意義と言える。h-BNは2次元材料電子デバイスの他に深紫外光源への応用が期待されている。発光材料としての特徴は、215 nmにシャープな発光を示すことであるが、この波長域の紫外光源は人体に無害な殺菌用のランプとして、昨年からの世界的な新型コロナウイルス感染症の拡大のなか大きな注目を浴びている。本研究で得られた知見により、h-BN薄膜の発光特性をさらに向上できれば、使用しやすいフラットパネル型の殺菌用深紫外光源などの開発に結び付くことが期待される。

Report

(4 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Research-status Report
  • 2018 Research-status Report
  • Research Products

    (12 results)

All 2021 2020 2019 2018

All Presentation (12 results) (of which Int'l Joint Research: 6 results,  Invited: 4 results)

  • [Presentation] Chemical vapor deposition of hexagonal boron nitride thin films on a Si substrate2021

    • Author(s)
      Kazuhiko Hara, T. Nakama, K. Matsushita, T. Watanabe, H. Kominami
    • Organizer
      6th International Conference on Nanoscience and Nanotechnology
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] コールドウォール反応管を用いた減圧化学気相法による c面サファイア基板上への六方晶窒化ホウ素薄膜の成長2021

    • Author(s)
      渡邊 泰良, 松下 一貴, 田中 佑樹, 吉岡 陸, 増田 克仁 , 小南 裕子, 原 和彦
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] c面サファイアおよびSi (111)基板上への六方晶BN薄膜のCVD成長2020

    • Author(s)
      名嘉眞朝泰・松下一貴・渡邊泰良・小南裕子・原 和彦,
    • Organizer
      2020年発光型/非発光型ディスプレイ合同研究会
    • Related Report
      2019 Research-status Report
  • [Presentation] Improvement in the luminescence property of hexagonal boron nitride grown by CVD on a c-plane sapphire substrate2019

    • Author(s)
      Kazuhiko Hara, Naoki Umehara, Kohei Shima, Kazunobu Kojima and Shigefusa F. Chichibu
    • Organizer
      The 4th International Conference on Physics of 2D Crystals
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] 六方晶窒化ホウ素薄膜のCVD成長におけるグレイン成長と結合2019

    • Author(s)
      名嘉眞 朝泰、松下 一貴、渡邊 泰良、小南 裕子、原 和彦
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] 減圧化学気相法を用いたSi (111)基板上への六方晶窒化ホウ素薄膜成長2019

    • Author(s)
      松下 一貴、名嘉眞 朝泰、渡邊 泰良、小南 裕子、原 和彦
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] Low-pressure CVD and characterization of hexagonal boron nitride thin films2019

    • Author(s)
      Kazuhiko Hara, Naoki Umehara
    • Organizer
      5th Int'l Conf. on Nanoscience and Nanotechnology
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrate2018

    • Author(s)
      Shigefusa F. Chichibu Naoki Umehara, Kohei Shima, Kazunobu Kojima, and Kazuhiko Hara
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Chemical vapor deposition of GaN films using gallium vapor as a gallium source on a c-plane sapphire substrate2018

    • Author(s)
      K. Hara, Y. Masuda, W. Kunieda, H. Kominami
    • Organizer
      17th Int'l Conf on Global Research and Education
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] LUMINESCENCE SPECTRA OF HEXAGONAL BN THIN FILMS GROWN BY CHEMICAL VAPOR DEPOSITION ON A c-PLANE Al2O3 SUBSTRATE2018

    • Author(s)
      S. F. Chichibu, N. Umehara, K. Shima, K. Kojima and K. Hara
    • Organizer
      The 3rd International Conference on Physics of 2D Crystals
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] CVD成長六方晶窒化ホウ素薄膜の高品質化に向けた基板加熱方法の検討2018

    • Author(s)
      名嘉眞 朝泰、川原崎 匠、松下 一貴、小南 裕子、原 和彦
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] サファイア基板に気相成長させたh-BN薄膜の発光ダイナミクス2018

    • Author(s)
      秩父 重英, 嶋 紘平, 梅原 直己, 小島 一信, 原 和彦
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Research-status Report

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Published: 2018-04-23   Modified: 2022-01-27  

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