GaN単結晶における貫通転位の漏れ電流特性を支配する物理的要因の抽出

• Project/Area Number: 18K04236
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Osaka University
• Principal Investigator: 竹内 正太郎 大阪大学, 基礎工学研究科, 助教 (70569384)
• Project Period (FY): 2018-04-01 – 2021-03-31
• Project Status: Declined (Fiscal Year 2018)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2020: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000); Fiscal Year 2019: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2018: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)