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Novel development of inter-subband transition optical devices using II-VI compound semiconductors on InP substrates

Research Project

Project/Area Number 18K04243
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionSophia University

Principal Investigator

NOMURA ICHIROU  上智大学, 理工学部, 教授 (00266074)

Project Period (FY) 2018-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2020: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2019: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2018: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywordsサブバンド間遷移 / Ⅱ-Ⅵ族半導体 / InP基板 / 超格子 / 光通信波長帯 / 伝導帯バンド不連続 / ヘテロ障壁 / 共鳴トンネルダイオード / ヘテロ接合 / 光導波路 / 微分負性抵抗 / 光デバイス / 光閉じ込め係数 / ショットキー性 / 量子カスケードレーザ
Outline of Final Research Achievements

Inter-subband transition (ISBT) wavelength in ZnCdSe/BeZnTe and MgSe/ZnCdSe superlattices (SLs) was investigated. From theoretical calculations, it was shown that the ISBT wavelength can be controlled in the optical fiber communication wavelength, i.e., 1.5 um range. In addition, optical waveguide structures consisting of a ZnCdSe/BeZnTe SL core and MgZnCdSe cladding layers were analyzed. As a result, it was shown that optical confinement factors sufficient for device applications were obtained. On the other hand, an ideal carrier injection method with low resistivity in devices was found by investing electrical characteristics of the ZnCdSe/MgZnCdSe hetero-junction. Furthermore, fabrication of novel MgSe/ZnCdSe resonant tunnel diodes succeeded.

Academic Significance and Societal Importance of the Research Achievements

ZnCdSe/BeZnTe超格子やMgSe/ZnCdSe超格子は可視光だけでなく光通波長帯への応用の可能性も見出され、当該超格子材料の新たな特長が示された。また、ヘテロ接合でのキャリア注入特性が明らかになり、低抵抗化に向けた手法が提案される等、ヘテロ接合での電気特性解析に重要な進展が得られた。これらは学術的に意義のある成果であると言える。

Report

(4 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Research-status Report
  • 2018 Research-status Report
  • Research Products

    (12 results)

All 2020 2019 2018

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (11 results) (of which Int'l Joint Research: 5 results)

  • [Journal Article] Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates2019

    • Author(s)
      Kenta Ishii, Ryosuke Amagasu, and Ichirou Nomura
    • Journal Title

      Journal of Crystal Growth

      Volume: 512 Pages: 96-99

    • DOI

      10.1016/j.jcrysgro.2019.02.014

    • Related Report
      2018 Research-status Report
    • Peer Reviewed
  • [Presentation] InP基板上Ⅱ-Ⅵ族半導体レーザ構造におけるp側ヘテロ接合の基礎検討2020

    • Author(s)
      米国シン、野村一郎
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] MgSe/ZnCdSe共鳴トンネルダイオード特性の理論解析と素子構造依存性の検討2020

    • Author(s)
      章燕瀛嬌、前田慶治、野村一郎
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] InP基板上Ⅱ-Ⅵ族半導体光デバイスにおけるp側正孔伝導特性の理論解析2019

    • Author(s)
      小林穂貴、前田慶治、野村一郎
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] InP基板上MgSe/ZnCdSe共鳴トンネルダイオードの特性解析2019

    • Author(s)
      前田慶治、酒井琢己、野村一郎
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] Theoretical analysis of current-voltage characteristics in II-VI compound semiconductor hetero-junctions on InP substrates2019

    • Author(s)
      Hodaka Kobayashi, Keiji Maeda, and Ichirou Nomura
    • Organizer
      The 19th International Conference on II-VI Compounds and Related Materials (II-VI 2019)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] Electrical characteristic analysis of MgSe/ZnCdSe resonant tunneling diodes on InP substrates2019

    • Author(s)
      Keiji Maeda, Takumi Sakai, and Ichirou Nomura
    • Organizer
      The 19th International Conference on II-VI Compounds and Related Materials (II-VI 2019)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] InP基板上ZnCdSe/MgZnCdSe/MgZnSeTe黄色レーザダイオード構造の検討2019

    • Author(s)
      前田慶治、石井健太、小林穂貴、野村一郎
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] MgSe/ZnCdSe II-VI compound semiconductor resonant tunneling diodes on InP substrates,2018

    • Author(s)
      Takumi Sakai and Ichirou Nomura
    • Organizer
      20th International Conference on Molecular Beam Epitaxy (ICMBE)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Investigation of the conduction band discontinuity of the MgSe/ZnCdSe hetero-structure on InP substrates using the n-i-n diode2018

    • Author(s)
      Hodaka Kobayashi, Yudai Momose, Takumi Sakai, and Ichirou Nomura
    • Organizer
      20th International Conference on Molecular Beam Epitaxy (ICMBE)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates2018

    • Author(s)
      Kennta Ishii, Ryosuke Amagasu, Hodaka Kobayashi, and Ichirou Nomura
    • Organizer
      20th International Conference on Molecular Beam Epitaxy (ICMBE)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] InP基板上Ⅱ-Ⅵ族半導体光デバイスにおけるn側構造の電気特性解析2018

    • Author(s)
      小林穂貴、石井健太、前田慶治、野村一郎
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Research-status Report

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Published: 2018-04-23   Modified: 2022-01-27  

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