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Control of the energy distribution of trap levels in the charge trapping films

Research Project

Project/Area Number 18K04244
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionTokai University

Principal Investigator

Kobayashi Kiyoteru  東海大学, 工学部, 教授 (90408005)

Project Period (FY) 2018-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2020: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2019: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2018: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Keywords不揮発性半導体メモリ / フラッシュメモリ / 電荷トラップ / シリコン窒化膜 / 電子保持特性 / 常磁性欠陥 / 点欠陥 / 欠陥準位 / 不揮発性メモリ / 正孔捕獲 / トラップ準位 / 電荷捕獲膜
Outline of Final Research Achievements

(a) In order to improve the reliability and to increase the capacity of flash memories, we have searched for elements that can create deep defect levels in silicon nitride films. First-principles calculations were carried out on the energy band of β-Si3N4 crystal containing an impurity element inside, and it was found that the 3d orbitals of Mn and V atoms generate defect levels in the forbidden band of the β- Si3N4 crystal. Next, memory devices with Mn-doped silicon nitride films were fabricated. It was found that, in the memory devices, the electron retention characteristics at room temperature was slightly improved and the recombination of holes and electrons in the silicon nitride films might be suppressed.
(b) A novel method for determining the energy depth of electrons trapped in silicon nitride films and a method for determining the charge centroid and the density of trapped holes have been developed.

Academic Significance and Societal Importance of the Research Achievements

本研究の(a)によって,シリコン窒化膜を電荷捕獲膜とするフラッシュメモリの信頼性の向上と大容量化に対し,不純物元素(本研究ではMnとV)のドープが有効な手段と成り得ることを見出した。この知見は,高性能フラッシュメモリの実現のための一つの技術指針を与えると考えられる。
また,(b)で言及した二つの方法によって,不純物元素をドープしたシリコン窒化膜や新規材料の電荷捕獲膜を開発する際に,電子トラップのエネルギー深さと正孔のチャージセントロイド,捕獲可能な最大の正孔密度を比較的容易に求めることが可能となる。これによって,高性能フラッシュメモリの開発を加速できる可能性がある。

Report

(4 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Research-status Report
  • 2018 Research-status Report
  • Research Products

    (20 results)

All 2020 2019 2018 Other

All Journal Article (3 results) (of which Peer Reviewed: 3 results) Presentation (15 results) (of which Int'l Joint Research: 2 results) Remarks (2 results)

  • [Journal Article] First-Principles Study of Defect Levels Caused by Transition Metal Atoms in Silicon Nitride for Non-Volatile Memory Applications2020

    • Author(s)
      R. Agrawal and K. Kobayashi
    • Journal Title

      ECS Transactions

      Volume: 98 Issue: 8 Pages: 65-75

    • DOI

      10.1149/09808.0065ecst

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hole trapping capability of silicon carbonitride charge trap layers2020

    • Author(s)
      Kiyoteru Kobayashi and Hiroshi Mino
    • Journal Title

      Eur. Phys. J. Appl. Phys.

      Volume: 91 Issue: 1 Pages: 10101-10101

    • DOI

      10.1051/epjap/2020190297

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Experimental Extraction of the Charge Centroid of Holes Trapped in Metal-Oxide-Nitride-Oxide-Semiconductor Memories2018

    • Author(s)
      Mino Hiroshi、Kobayashi Kiyoteru
    • Journal Title

      ECS Transactions

      Volume: 86 Issue: 3 Pages: 23-32

    • DOI

      10.1149/08603.0023ecst

    • Related Report
      2018 Research-status Report
    • Peer Reviewed
  • [Presentation] First-Principles Calculations of Transition Metal Defects in Silicon Nitride Charge Trap Material2020

    • Author(s)
      Rahul Agrawal and Kiyoteru Kobayashi
    • Organizer
      第84回半導体・集積回路技術シンポジウム
    • Related Report
      2020 Annual Research Report
  • [Presentation] First-Principles Study of Defect Levels Caused By Transition Metal Atoms in Silicon Nitride for Non-Volatile Memory Applications2020

    • Author(s)
      R. Agrawal and K. Kobayashi
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid-State Science 2020 (PRiME 2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] First-Principles Calculations of Energy Levels in Metal-Doped Silicon Nitride for Charge Trap Memory Applications2020

    • Author(s)
      Rahul Agrawal and Kiyoteru Kobayashi
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Determination of Charge Centroid and Density of Holes Trapped in Metal-Oxide-Nitride-Oxide-Semiconductor-type Non-Volatile Memory Devices2019

    • Author(s)
      Kiyoteru Kobayashi
    • Organizer
      28th International Conference on Amorphous and Nano-crystalline Semiconductors (ICANS)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] The effect of Hf-ion implantation on the charge trapping characteristics of MONOS-type memory devices2019

    • Author(s)
      Rahul Agrawal, Takashi Kuroi, Naoya Matsuoka, Ayato Sakurai, Reo Mazaki, Koudai Nakamura, Akinari Okano, Riku Ito, and Kiyoteru Kobayashi
    • Organizer
      第83回半導体・集積回路技術シンポジウム
    • Related Report
      2019 Research-status Report
  • [Presentation] The effect of Hf-ion implantation on the charge trapping characteristics of MONOS-type memory devices2019

    • Author(s)
      Rahul Agrawal and Kiyoteru Kobayashi
    • Organizer
      第80回応用物理学会秋季学術講演会 講演予稿集
    • Related Report
      2019 Research-status Report
  • [Presentation] ハフニウムを添加したシリコン窒化膜の窒素原子空孔の欠陥準位2019

    • Author(s)
      新里 健也、小林 清輝
    • Organizer
      2019年第66回応用物理学会春季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] トンネル電流解析によるMONOS型不揮発性メモリの捕獲正孔密度の決定2019

    • Author(s)
      美濃 暢、小林 清輝
    • Organizer
      2019年第66回応用物理学会春季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] Determination of the Charge Centroid of Holes Trapped in MONOS-Type Memories at High Gate Voltages2018

    • Author(s)
      H. Mino and K. Kobayashi
    • Organizer
      18th Non-Volatile Memory Technology Symposium (NVMTS 2018)
    • Related Report
      2018 Research-status Report
  • [Presentation] Experimental Extraction of the Charge Centroid of Holes Trapped in Metal-Oxide-Nitride-Oxide-Semiconductor Memories2018

    • Author(s)
      H. Mino and K. Kobayashi
    • Organizer
      2018 ECS and SMEQ Joint International Meeting (AiMES 2018)
    • Related Report
      2018 Research-status Report
  • [Presentation] シリコン窒化膜の窒素原子空孔による欠陥準位の第一原理計算2018

    • Author(s)
      新里 健也、小林 清輝
    • Organizer
      第82回半導体・集積回路技術シンポジウム
    • Related Report
      2018 Research-status Report
  • [Presentation] MONOS型不揮発性メモリの電子保持特性2018

    • Author(s)
      岸田拓朗、小林清輝
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] 山口真司、小林清輝2018

    • Author(s)
      1050℃熱処理において生成したシリコン窒化膜の常磁性欠陥(Ⅱ)
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] 高電圧で MONOS 型メモリに捕獲された正孔のチャージセントロイドの決定2018

    • Author(s)
      美濃 暢、小林 清輝
    • Organizer
      第82回半導体・集積回路技術シンポジウム
    • Related Report
      2018 Research-status Report
  • [Presentation] N/Si 組成比が異なるシリコン窒化膜の紫外線照射後の伝導電流の変化2018

    • Author(s)
      小林大泰、岸田拓朗 、山口真司、小林清輝
    • Organizer
      第82回半導体・集積回路技術シンポジウム
    • Related Report
      2018 Research-status Report
  • [Remarks] 東海大学 小林研究室

    • URL

      http://www.ei.u-tokai.ac.jp/lab/kkbys/html/research-announce.html

    • Related Report
      2020 Annual Research Report
  • [Remarks] 東海大学 小林研究室

    • URL

      http://www.ei.u-tokai.ac.jp/lab/kkbys/index.html

    • Related Report
      2018 Research-status Report

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Published: 2018-04-23   Modified: 2022-01-27  

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