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Growth of SiC bulk crystals by chemical vapor deposition

Research Project

Project/Area Number 18K04252
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

Masumoto Keiko  国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員 (60635324)

Project Period (FY) 2018-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2020: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2019: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2018: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywords炭化珪素 / エピタキシャル成長 / スパイラル成長 / on-axis / 炭化ケイ素 / 3Cインクルージョン / SiC / CVD / エピタキシャル / バルク
Outline of Final Research Achievements

I investigated the conditions surrounding SiC spiral growth to realize SiC bulk crystals grown by chemical vapor deposition. The defect density at a high growth rate drastically decreased by optimizing the growth conditions at the initial growth stage. I succeeded in growing a thick SiC epitaxial layer with a thickness of 194 μm on a 3-inch substrate at a growth rate of 40 μm/h for 5 h, and demonstrating its free-standing epitaxial layer, which could be handled using tweezers.

Academic Significance and Societal Importance of the Research Achievements

次世代パワー半導体SiCはCO2排出抑制のキーデバイスとして注目を集めており、本研究の成果によりCVD法によるSiCバルク結晶成長が実現すると、SiCデバイスのコストが低減し、更なる普及につながる。また、SiCは様々な多形が安定であるため、エピタキシャル成長においてスパイラル成長の安定化は困難であると考えられていたが、成長初期の過飽和度の制御等、スパイラル成長実現のための重要な要素を示すことができた。

Report

(4 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Research-status Report
  • 2018 Research-status Report
  • Research Products

    (3 results)

All 2020 2019

All Journal Article (1 results) (of which Peer Reviewed: 1 results,  Open Access: 1 results) Presentation (2 results)

  • [Journal Article] Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers2020

    • Author(s)
      Masumoto Keiko、Kojima Kazutoshi、Yamaguchi Hiroshi
    • Journal Title

      Materials

      Volume: 13 Issue: 21 Pages: 4818-4818

    • DOI

      10.3390/ma13214818

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Presentation] SiC on-axisエピタキシャル層を用いた自立基板の作製と3Cインクルージョン発生原因の評価2019

    • Author(s)
      升本恵子、児島一聡、奥村元
    • Organizer
      先進パワー半導体分科会 第6回講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] 4H-SiC C面 on-axis基板上の厚膜エピタキシャル成長2019

    • Author(s)
      升本恵子、児島一聡、奥村元
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Research-status Report

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Published: 2018-04-23   Modified: 2022-01-27  

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