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Study of precision control of metal-assisted wet-chemical etching of Si using metal multi-layer as a catalyst

Research Project

Project/Area Number 18K04916
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 28050:Nano/micro-systems-related
Research InstitutionKansai University

Principal Investigator

Tomohiro Shimizu  関西大学, システム理工学部, 教授 (80581165)

Co-Investigator(Kenkyū-buntansha) 新宮原 正三  関西大学, システム理工学部, 教授 (10231367)
伊藤 健  関西大学, システム理工学部, 教授 (50426350)
Project Period (FY) 2018-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2020: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2019: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2018: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
KeywordsMacEtch / Mace / Si加工 / MEMS / TSV / 化学エッチング / Si高アスペクト比構造 / 界面活性剤 / エッチング / Si / 基板加工技術 / メタルアシストエッチング / シリコン深堀エッチング / 金属触媒 / 半導体基板加工
Outline of Final Research Achievements

To improve the Meta-assisted chemical Etching (MacEtch) process to be applicable to the manufacturing of Si devices, hard-diffusion materials used as catalysts or the introduction of diffusion barrier layers between the noble metal and Si are required to eliminate undesirable metal diffusion into the Si substrate, as well as formation of well-defined vertical holes in the substrate by this method. In this study, the usefulness of a metal interlayer interposed between the metal catalyst and Si was demonstrated for the formation of vertical microscale holes in a Si(100) substrate by MacEtch, and the effect of the interlayer was indicated. Additionally, we also showed additives of etching solution is also important to obtain well-defined vertical Si holes using MacEtch.

Academic Significance and Societal Importance of the Research Achievements

AuをSiに直接製膜する場合は、慣例的にTiが密着層が用いられてきた。Au触媒を用いたSi基板の湿式エッチングにおいても、密着層としてTiが用いてきたが、本研究により密着層としての役割だけでなく、Au-Siの相互拡散を抑止し、ランダムエッチングを防ぐ効果があることが初めて明らかとなった。ランダムエッチングの抑止は湿式Si加工の信頼性を向上し、精密さ信頼性が必要とされる用途にも今後応用が期待できる。

Report

(5 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Research-status Report
  • 2019 Research-status Report
  • 2018 Research-status Report
  • Research Products

    (22 results)

All 2022 2021 2020 2019 2018

All Journal Article (4 results) (of which Peer Reviewed: 4 results,  Open Access: 1 results) Presentation (18 results) (of which Int'l Joint Research: 10 results,  Invited: 3 results)

  • [Journal Article] Effect of etching solution concentration on preparation of Si holes by metal-assisted chemical etching2022

    • Author(s)
      村田恭介、依岡拓也、白岩直哉、伊藤健、新宮原正三、清水智弘
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: -

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Formation of MoS2 nanostructure arrays using anodic aluminum oxide template2020

    • Author(s)
      Okamoto Takaki、Shimizu Tomohiro、Takase Koichi、Ito Takeshi、Shingubara Shoso
    • Journal Title

      Micro and Nano Engineering

      Volume: 9 Pages: 100071-100071

    • DOI

      10.1016/j.mne.2020.100071

    • Related Report
      2020 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Effect of a metal interlayer under Au catalyst for the preparation of microscale holes in Si substrate by metal-assisted chemical etching2019

    • Author(s)
      Shimizu Tomohiro、Niwa Ryosuke、Ito Takeshi、Shingubara Shoso
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SA Pages: SAAE07-SAAE07

    • DOI

      10.7567/1347-4065/aaec15

    • NAID

      210000135223

    • Related Report
      2018 Research-status Report
    • Peer Reviewed
  • [Journal Article] Effect of additives on preparation of vertical holes in Si substrate using metal assisted chemical etching2019

    • Author(s)
      Shimizu Tomohiro、Niwa Ryosuke、Ito Takeshi、Shingubara Shoso
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 印刷中

    • NAID

      210000156072

    • Related Report
      2018 Research-status Report
    • Peer Reviewed
  • [Presentation] シリコン基板湿式エッチング及びAl陽極酸化を用いた微細構造形成2022

    • Author(s)
      清水智弘、新宮原正三
    • Organizer
      表面技術協会145回講演大会
    • Related Report
      2021 Annual Research Report
    • Invited
  • [Presentation] Effect of concentration of the etching solution on preparation of Si holes using MacEtch process2021

    • Author(s)
      K. Murata, T. Yorioka, T. Ito, S. Shingubara, and T. Shimizu
    • Organizer
      Advanced Metallization Conference 2021 30th
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effect of concentration ratio of the etching solution on preparation of vertical Si holes using metal assisted chemical etching2021

    • Author(s)
      K. Murata, T. Yorioka, T. Ito, S. Shingubara, and T. Shimizu
    • Organizer
      72nd Annual Meeting of the International Society of Electrochemistry
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] MacEtchを用いたTSV形成におけるHF-H2O2濃度比の効果2021

    • Author(s)
      村田恭輔,依岡拓也,伊藤健,新宮原正三,清水智弘
    • Organizer
      第85回半導体・集積回路技術シンポジウム
    • Related Report
      2021 Annual Research Report
  • [Presentation] Effect of Polarity of Surfactant on Formation of through-Silicon Via Using Metal-Assisted Chemical Etching2020

    • Author(s)
      S. Hanatani, T. Yorioka, T. Shimizu, T. Ito, S. Shingubara
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid State Science 2020
    • Related Report
      2020 Research-status Report
    • Int'l Joint Research
  • [Presentation] 貴金属触媒を用いた湿式Si-TSV 形成 におけるエッチング溶液濃度の検討2019

    • Author(s)
      依岡拓也、花谷俊輔、清水智弘、伊藤健、新宮原正三
    • Organizer
      第29回マイクロエレクトロニクスシンポジウム
    • Related Report
      2019 Research-status Report
  • [Presentation] MacEtchによるTSV形成における界面活性剤添加の効果2019

    • Author(s)
      花谷俊輔、依岡拓也、清水智弘、伊藤健、新宮原正三
    • Organizer
      半導体集積回路技術シンポジウム
    • Related Report
      2019 Research-status Report
  • [Presentation] Influence of additives on formation of through-Si via in Si substrate using metal assisted chemical etching2019

    • Author(s)
      T. Shimizu, S. Hanatani, T. Yorioka, N. Niwa, T. Ito, S. Shingubara
    • Organizer
      235th ECS Meeting
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] 貴金属触媒を用いた湿式Si-TSV 形成 におけるエッチング溶液濃度の検討2019

    • Author(s)
      依岡拓也、花谷俊輔、清水智弘、伊藤健、新宮原正三
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] Formation of through-Si via using metal assisted chemical etching method2019

    • Author(s)
      T. Shimizu and S. Shingubara
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces (ISCSI)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Preparation of Si-TSVs Using Metal-Assisted Chemical Etching -Effect of Concentration of the Etching Solution2019

    • Author(s)
      T. Yorioka, S. Hanatani, T. Shimizu, T. Ito and S. Shingubara,
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces (ISCSI)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] 貴金属触媒を用いた湿式選択Siエッチングにおける界面活性剤の効果2019

    • Author(s)
      花谷俊輔,依岡拓也,清水智弘,伊藤健,新宮原正三
    • Organizer
      電気化学会第87回大会
    • Related Report
      2019 Research-status Report
  • [Presentation] Effect of an interlayer under Au catalyst for preparation of microscale holes in Si substrate by metal-assisted chemical etching2018

    • Author(s)
      Ryosuke Niwa, Tomohiro Shimizu, Michio Matsumura, Takeshi Ito and Shoso Shingubara
    • Organizer
      ISPlasma 2018
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Effect of Annealing Condition on Formation of Cu2ZnSnS4 Thin Films Using CS22018

    • Author(s)
      K. Yoshikawa, T. Shimizu, S. Tanaka, T. Ito, S. Shingubara
    • Organizer
      35th European Photovoltaic Solar Energy Conference and Exhibition
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Effect of additives on metal-assisted chemical etching2018

    • Author(s)
      T. Shimizu
    • Organizer
      3rd International Conference on Emerging Advanced Nanomaterials(ISEAN2018)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Effect of Additives for Preparation of Vertical Holes in Si Substrate Using Metal-Assisted Chemical Etching2018

    • Author(s)
      R. Niwa, T. Shimizu, T. Ito, S. Shingubara
    • Organizer
      31st International Microprocesses and Nanotechnology Conference(MNC2018)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] 貴金属触媒を用いた湿式Si-TSVエッチングにおける添加剤の効果2018

    • Author(s)
      丹羽良輔、花谷俊輔、山口嵩人、清水智弘、伊藤健、新宮原正三
    • Organizer
      第28回マイクロエレクトロニクスシンポジウム 秋季大会(MES2018)
    • Related Report
      2018 Research-status Report
  • [Presentation] MacEtchを用いた垂直孔形成における添加剤の効果2018

    • Author(s)
      花谷俊輔、清水智弘、伊藤健、新宮原正三
    • Organizer
      応用物理学会 界面ナノ電子化学研究会 第四回ポスター発表展
    • Related Report
      2018 Research-status Report

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Published: 2018-04-23   Modified: 2023-01-30  

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