Development of Dielectric Constant Nano-Imaging Method Using SNDM and its Application to Materials and Device Characterization
| Project/Area Number |
18K04932
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 29020:Thin film/surface and interfacial physical properties-related
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2018-04-01 – 2023-03-31
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| Project Status |
Completed (Fiscal Year 2022)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2020: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2019: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2018: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | プローブ顕微鏡 / 走査型非線形誘電率顕微鏡 / 誘電率分布計測 / 半導体計測 / 誘電体 / 誘電率イメージング / 半導体 / キャリア分布イメージング / 走査型プローブ顕微鏡 / 誘電率 |
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| Outline of Final Research Achievements |
Dielectric constant imaging in the nanoscale region is expected to become one of the most important evaluation techniques in the future, in conjunction with the development of electronic devices that are becoming increasingly miniaturized and have higher performance. In this study, we developed a method for linear dielectric constant imaging (∂C/∂z-SNDM method) using a scanning nonlinear dielectric constant microscope (SNDM) with extremely high capacitance detection sensitivity in the order of 10^-22 F.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究を通じて∂C/∂z-SNDM法がナノスケール領域における誘電率分布を可視化する手法として有効であることが示された．本手法は今後様々な様々な測定対象に展開されてゆくと考えられる．具体的には，微細化するFETデバイス等における酸化膜のナノスケール評価への展開が期待される． また，近年開発が盛んなナノコンポジット材料やナノ結晶材料，ナノシート材料などの新奇ナノ材料も，本手法が有用となる測定対象の例として挙げることができる．
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Report
(6 results)
Research Products
(20 results)
