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Investigation of vapor phase epitaxy growth conditions for high quality bulk GaN and their crystal growth process

Research Project

Project/Area Number 18K04957
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 30010:Crystal engineering-related
Research InstitutionMie University

Principal Investigator

Kawamura Takahiro  三重大学, 工学研究科, 助教 (80581511)

Project Period (FY) 2018-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2020: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2019: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2018: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Keywords窒化ガリウム / 第一原理計算 / 不純物 / OVPE成長 / 結晶成長
Outline of Final Research Achievements

We carried out first-principles calculations to clarify the GaN crystal growth mechanism in OVPE method. First, we examined O adsorption and desorption on the GaN surface with kink, step, and terrace structures and found that O and OH hardly desorbs from the GaN surface. Second, we simulated surface reconstruction on the polar, nonpolar, and semi-polar surface. The relationships of stable surface orientations and surface structures with the growth conditions of Ga pressure and temperature were examined. It was shown that as the Ga partial pressure increases, the (1-101) reconstructed surface with O impurity is more likely to appear, so that the amount of O impurities also increase.

Academic Significance and Societal Importance of the Research Achievements

本研究により明らかになったGaN結晶表面におけるO不純物の吸着・脱離反応やその際にエネルギーの評価、また各面方位における表面生成エネルギーの絶対値を比較することで明らかにした成長条件と安定な面方位および表面構造との関係は、高品質かつ安価なGaN基板用のバルクGaN結晶成長法として期待されているOVPE法における結晶品質と不純物濃度制御の改善に貢献することが期待される。また、本研究を通して習得した手法はGaNにおける他の不純物に関する解析や、仮定する成長条件を変えることで様々な成長条件における安定な面方位や結晶形状の予測に応用することが出来る。

Report

(4 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Research-status Report
  • 2018 Research-status Report
  • Research Products

    (11 results)

All 2021 2020 2019 2018 Other

All Journal Article (3 results) (of which Peer Reviewed: 3 results,  Open Access: 1 results) Presentation (7 results) (of which Int'l Joint Research: 3 results,  Invited: 1 results) Remarks (1 results)

  • [Journal Article] Activation free energies for formation and dissociation of N-N, C-C, and C-H bonds in a Na-Ga melt2021

    • Author(s)
      Kawamura Takahiro、Imanishi Masayuki、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada
    • Journal Title

      Computational Materials Science

      Volume: 194 Pages: 110366-110366

    • DOI

      10.1016/j.commatsci.2021.110366

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Absolute surface energies of oxygen-adsorbed GaN surfaces2020

    • Author(s)
      Kawamura Takahiro、Akiyama Toru、Kitamoto Akira、Imanishi Masayuki、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi
    • Journal Title

      Journal of Crystal Growth

      Volume: 549 Pages: 125868-125868

    • DOI

      10.1016/j.jcrysgro.2020.125868

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth2018

    • Author(s)
      Kawamura Takahiro、Kitamoto Akira、Imade Mamoru、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi、Akiyama Toru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Issue: 11 Pages: 115504-115504

    • DOI

      10.7567/jjap.57.115504

    • NAID

      210000149765

    • Related Report
      2018 Research-status Report
    • Peer Reviewed
  • [Presentation] 酸素不純物を考慮したGaN表面エネルギーの面方位依存性2019

    • Author(s)
      河村貴宏,北本啓,今西正幸,吉村政志,森勇介,森川良忠,寒川義裕,柿本浩一
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] First-principles calculation of absolute surface energies of GaN during oxide vapor phase epitaxy growth2019

    • Author(s)
      Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
    • Organizer
      19th International Conference on Crystal Growth and Epitaxy
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] キンクおよびステップ構造を持つGaN極性表面におけるO不純物の脱離エネルギーの解析2019

    • Author(s)
      河村貴宏、竹田浩基、北本啓、今西正幸、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] First-principles analysis of oxygen adsorption on kinked GaN(0001) surface2018

    • Author(s)
      Hiroki Takeda, Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
    • Organizer
      The International Workshop on Nitride Semiconductors 2018
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] 第一原理計算によるGaN結晶成長に関する研究2018

    • Author(s)
      河村貴宏
    • Organizer
      第47回結晶成長国内会議
    • Related Report
      2018 Research-status Report
    • Invited
  • [Presentation] OVPE成長条件下におけるGaN(0001)面のkink表面構造の解析2018

    • Author(s)
      竹田浩基、河村貴宏、鈴木泰之、北本啓、今西正幸、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] First-Principles Calculations of GaN Surface Structures under OVPE Growth Conditions and Desorption Energies of Oxygen Impurities2018

    • Author(s)
      Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Remarks] 量子物性工学研究室 Study(研究内容)

    • URL

      http://www.qm.mach.mie-u.ac.jp/study.html

    • Related Report
      2018 Research-status Report

URL: 

Published: 2018-04-23   Modified: 2022-01-27  

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