Improve the understanding of the mechanism of spin-orbit torque induced magnetization reversal and construct the material and device technologies based on it

• Project/Area Number: 18K13796
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: Tohoku University
• Principal Investigator: Zhang Chaoliang 東北大学, 学際科学フロンティア研究所, 助教 (80807678)
• Project Period (FY): 2018-04-01 – 2021-03-31
• Project Status: Completed (Fiscal Year 2020)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2020: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2019: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2018: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
• Keywords: スピントロニクス / スピン軌道トルク

Outline of Final Research Achievements

Magnetoresistive random-access memory has attracted significant attention these years as a promising alternative to the current volatile random-access memory technologies. Since it stores information as the magnetization directions of ferromagnetic thin films in magnetic tunnel junctions (MTJs), no energy is required to retain bit information. Meanwhile, the schemes which can reverse the magnetization direction with lower power consumption and faster speed become extremely important. In this work, we systematically study the magnetization reversal via spin-transfer torque (STT) and spin-orbit torque (SOT) in the ultra-fast regime 200 ps < tp < 1ns. We find that low-current fast switching can be achieved by modifying the combination of STT and SOT. Our findings are expected to provide clues for understanding the magnetization reversal mechanism with STT&SOT and eventually pave the way towards the nonvolatile spintronics device with high-speed and low-power-consumption performance.

Academic Significance and Societal Importance of the Research Achievements

本研究により、高性能なSOT-MTJ素子の材料設計、デバイス設計に関する系統的な理解が得られる。これらの知見を応用することで、製造が容易な構造で、高速動作、高信頼性、高い書き込み耐性を実現できるメモリ素子の実現が期待される。このため学術界に大きなインパクトを与える同時に、産業界へも高い貢献にもつながると考えられる。

Research Products

• [Journal Article] Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin?orbit torque (2021)
  • Author(s): Zhang Chaoliang、Takeuchi Yutaro、Fukami Shunsuke、Ohno Hideo
  • Journal Title: Applied Physics Letters Volume: 118 Issue: 9 Pages: 092406-092406
  • DOI: 10.1063/5.0039061
  • Peer Reviewed
• [Journal Article] Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition (2020)
  • Author(s): Natsui Masanori、Tamakoshi Akira、Honjo Hiroaki、Watanabe Toshinari、Nasuno Takashi、Zhang Chaoliang、Tanigawa Takaho、Inoue Hirofumi、Niwa Masaaki、Yoshiduka Toru、Noguchi Yasuo、Yasuhira Mitsuo、Ma Yitao、Shen Hui、Fukami Shunsuke、Sato Hideo、Ikeda Shoji、Ohno Hideo、Endoh Tetsuo、Hanyu Takahiro
  • Journal Title: IEEE Journal of Solid-State Circuits Volume: 56 Issue: 4 Pages: 1116-1128
  • DOI: 10.1109/jssc.2020.3039800
  • Peer Reviewed
• [Journal Article] Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage (2020)
  • Author(s): Natsui M.、Tamakoshi A.、Honjo H.、Watanabe T.、Nasuno T.、Zhang C.、Tanigawa T.、Inoue H.、Niwa M.、Yoshiduka T.、Noguchi Y.、Yasuhira M.、Ma Y.、Shen H.、Fukami S.、Sato H.、Ikeda S.、Ohno H.、Endoh T.、Hanyu T.
  • Journal Title: 2020 IEEE Symposium on VLSI Circuits Volume: 1 Pages: 1-2
  • DOI: 10.1109/vlsicircuits18222.2020.9162774
  • Peer Reviewed
• [Journal Article] Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance (2019)
  • Author(s): Okada Atsushi、Takeuchi Yutaro、Furuya Kaito、Zhang Chaoliang、Sato Hideo、Fukami Shunsuke、Ohno Hideo
  • Journal Title: Physical Review Applied Volume: 12 Issue: 1
  • DOI: 10.1103/physrevapplied.12.014040
• [Journal Article] Artificial Neuron and Synapse Realized in an Antiferromagnet/Ferromagnet Heterostructure Using Dynamics of Spin?Orbit Torque Switching (2019)
  • Author(s): Kurenkov Aleksandr、DuttaGupta Samik、Zhang Chaoliang、Fukami Shunsuke、Horio Yoshihiko、Ohno Hideo
  • Journal Title: Advanced Materials Volume: 31 Issue: 23 Pages: 1900636-1900636
  • DOI: 10.1002/adma.201900636
  • Peer Reviewed / Open Access
• [Journal Article] Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance (2019)
  • Author(s): Takahashi Yu、Takeuchi Yutaro、Zhang Chaoliang、Jinnai Butsurin、Fukami Shunsuke、Ohno Hideo
  • Journal Title: Applied Physics Letters Volume: 114 Issue: 1 Pages: 012410-012410
  • DOI: 10.1063/1.5075542
• [Journal Article] Spin-orbit torques in high-resistivity-W/CoFeB/MgO (2018)
  • Author(s): Takeuchi Yutaro、Zhang Chaoliang、Okada Atsushi、Sato Hideo、Fukami Shunsuke、Ohno Hideo
  • Journal Title: Applied Physics Letters Volume: 112 Issue: 19 Pages: 192408-192408
  • DOI: 10.1063/1.5027855
• [Presentation] Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage (2020)
  • Author(s): M. Natsui,A. Tamakoshi,H. Honjo,T. Watanabe,T. Nasuno,C. Zhang,T. Tanigawa,H. Inoue,M. Niwa,T. Yoshiduka,Y. Noguchi,M. Yasuhira,Y. Ma,H. Shen,S. Fukami,H. Sato,S. Ikeda,H. Ohno,T. Endoh,T. Hanyu
  • Organizer: Symposia on VLSI Technology and Circuits
  • Int'l Joint Research
• [Presentation] Uniform artificial synapse and neuron based on spintronic devices (2019)
  • Author(s): A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, and H. Ohno
  • Organizer: 17th RIEC International Workshop on Spintronics and 10th JSPS Core-to-Core Workshop on “New-Concept Spintronic Devices”
  • Int'l Joint Research / Invited
• [Presentation] Artificial Synapse and Neuron Based on the Dynamics of Spintronic Devices (2019)
  • Author(s): A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, and H. Ohno
  • Organizer: 64th Annual Conference on Magnetism and Magnetic Materials (MMM2019)
  • Int'l Joint Research / Invited
• [Presentation] Antiferromagnet/ferromagnet heterostructures as synapses and neurons (2019)
  • Author(s): A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio and H. Ohno
  • Organizer: SPICE Workshop on Antiferromagnetic Spintronics: from topology to neuromorphic computing
  • Int'l Joint Research / Invited
• [Presentation] First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology (2019)
  • Author(s): H. Honjo, A. Nguyen Thi Van, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshizuka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. Ma, H. Koike, Y. Takahashi, K. Furuya, H. Shen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
  • Organizer: 2019 IEEE International Electron Devices Meeting (IEDM2019)
  • Int'l Joint Research
• [Presentation] Magnetization reversal via the combination of spin-orbit torque and spin-transfer torque in sub-ns region (2019)
  • Author(s): C. Zhang, Y. Takeuchi, S. Fukami and H. Ohno
  • Organizer: 17th RIEC International Workshop on Spintronics and 10th JSPS Core-to-Core Workshop on “New-Concept Spintronic Devices”
  • Int'l Joint Research
• [Presentation] Antiferromagnet/ferromagnet heterostructures for artificial neurons and synapses (2019)
  • Author(s): A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, and H. Ohno
  • Organizer: York-Tohoku-Kaiserslautern Research Symposium on “New-Concept Spintronics Devices”
  • Int'l Joint Research
• [Presentation] Efficient control of magnetization utilizing spin-orbit torque and spin-transfer torque (2019)
  • Author(s): C. Zhang, Y. Takeuchi, Y. Takahashi, S. Fukami, and H. Ohno
  • Organizer: York-Tohoku-Kaiserslautern Research Symposium on “New-Concept Spintronics Devices”
  • Int'l Joint Research
• [Presentation] Antiferromagnet/Ferromagnet Heterostructures for Artificial Neurons and Synapses (2019)
  • Author(s): A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, H. Ohno
  • Organizer: 第80回応用物理学会秋季学術講演会
• [Presentation] Sub-ns switching by combining SOT and STT in MTJ devices (2019)
  • Author(s): C. Zhang, Y. Takeuchi, Y. Takahashi, S. Fukami, and H. Ohno
  • Organizer: The 2nd Symposium for World Leading Research Centers
  • Int'l Joint Research
• [Presentation] Relationship between spin-orbit torque switching efficiency and W resistivity in W/CoFeB/MgO (2019)
  • Author(s): K. Furuya, Y. Takeuchi, C. Zhang, B. Jinnai, S. Fukami, and H. Ohno
  • Organizer: 2019 Joint MMM-Intermag Conference
  • Int'l Joint Research
• [Presentation] Sub-ns and low-power magnetization switching by combination of spin-orbit torque and spin-transfer torque (2019)
  • Author(s): C. Zhang, Y. Takeuchi, Y. Takahashi, S. Fukami and H. Ohno
  • Organizer: 2019 Joint MMM-Intermag Conference
  • Int'l Joint Research
• [Presentation] Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodots detected using planar Hall effect (2019)
  • Author(s): Y. Takahashi, Y. Takeuchi, C. Zhang, B. Jinnai, S. Fukami and H. Ohno
  • Organizer: 16th RIEC International Workshop on Spintronics and 8th JSPS Core-to-Core Workshop on “New-Concept Spintronic Devices”
  • Int'l Joint Research
• [Presentation] Time and spatial evolution of spin-orbit torque-induced switching in W/CoFeB/MgO (2019)
  • Author(s): C. Zhang, S. Fukami, S. DuttaGupta, H. Sato and H. Ohno
  • Organizer: 16th RIEC International Workshop on Spintronics and 8th JSPS Core-to-Core Workshop on “New-Concept Spintronic Devices
  • Int'l Joint Research
• [Presentation] Determination of spin-orbit torque by spin-torque ferromagnetic resonance free from spin-pumping (2019)
  • Author(s): A. Okada, Y. Takeuchi, K. Furuya, C. Zhang, H. Sato, S. Fukami, and H. Ohno
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] Enhancement of spin-orbit torque in W/CoFeB/MgO by controlling W resistivity (2019)
  • Author(s): K. Furuya, Y. Takeuchi, C. Zhang, B. Jinnai, Y. Takahashi, S. Fukami, and H. Ohno
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] Associative memory operation using analog spin-orbit torque device (2018)
  • Author(s): S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno
  • Organizer: SPICE Workshop - Spintronics meets Neuromorphics
  • Int'l Joint Research / Invited
• [Presentation] Spin-orbit torque switching in nanoscale devices, physics and material engineering (2018)
  • Author(s): C. Zhang, Y. Takeuchi, S. Fukami, and H. Ohno
  • Organizer: KITS Workshop 2018
  • Int'l Joint Research / Invited
• [Presentation] Analog spintronics device for artificial neural networks (2018)
  • Author(s): S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno
  • Organizer: The 2018 International Symposium on Nonlinear Theory and Its Applications (NOLTA2018)
  • Int'l Joint Research / Invited
• [Presentation] Neuromorphic computing with analog spin-orbit torque devices (Invited) (2018)
  • Author(s): S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno
  • Organizer: The 10th International School and Conference on Physics and Applications of Spin Phenomena in Solids
  • Int'l Joint Research / Invited
• [Presentation] Spin-orbit torque switching device for high-performance and low-power integrated circuits (2018)
  • Author(s): S. Fukami, C. Zhang, B. Jinnai, and H. Ohno
  • Organizer: The 23rd International Colloquium on Magnetic Films and Surfaces (ICMFS-2018)
  • Int'l Joint Research / Invited
• [Presentation] Analog spin-orbit torque devices for artificial neural networks (2018)
  • Author(s): S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno
  • Organizer: The 21st International Conference on Magnetism
  • Int'l Joint Research / Invited
• [Presentation] Neuromorphic computing with analog spin-orbit torque device (2018)
  • Author(s): S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno
  • Organizer: Workshop on Spintronics and Nanomagnetism for Neuromorphic Computing
  • Int'l Joint Research / Invited
• [Presentation] Spintronic analog memory for neuromorphic computing (2018)
  • Author(s): S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno
  • Organizer: 14th International Conference on Modern Materials and Technologies
  • Int'l Joint Research / Invited
• [Presentation] Spin-orbit torque switching and its applications, from high-speed memory to artificial neural network (2018)
  • Author(s): S. Fukami, C. Zhang, W. A. Borders, A. Kurenkov, S. DuttaGupta, and H. Ohno
  • Organizer: 5th International Conference of Asian Union of Magnetics Societies (IcAUMS 2018)
  • Int'l Joint Research / Invited
• [Presentation] Engineering of spin-orbit torques in W/CoFeB/MgO heterostructures for efficient control of magnetization (2018)
  • Author(s): Y. Takeuchi, K. Furuya, Y. Takahashi, B. Jinnai, C. Zhang, S. Fukami, and H. Ohno
  • Organizer: 2nd Tohoku/SG-SPIN Workshop in Spintronics
  • Int'l Joint Research
• [Presentation] Spin-orbit torque switching in in-plane nanomagnets characterized by planar Hall effect (2018)
  • Author(s): Y. Takahashi, Y. Takeuchi, C. Zhang, B. Jinnai, S. Fukami, and H. Ohno
  • Organizer: NIMS Academic Symposium
  • Int'l Joint Research
• [Presentation] Spin-orbit torque switching in perpendicular-magnetized Co/Pt multilayers (2018)
  • Author(s): B. Jinnai, C. Zhang, A. Kurenkov, M. Bersweiler, H. Sato, S. Fukami, and H. Ohno
  • Organizer: NIMS Academic Symposium
  • Int'l Joint Research
• [Presentation] Spin-orbit torque induced switching of in-plane nanomagnet arrays evaluated through differential planar Hall effect (2018)
  • Author(s): Y. Takahashi, Y. Takeuchi, C Zhang, B. Jinnai, S. Fukami and H. Ohno
  • Organizer: The 21st International Conference on Magnetism (ICM2018)
  • Int'l Joint Research
• [Presentation] Spin-orbit torque in W/CoFeB/MgO heterostructures, Wide-range W resistivity dependence (2018)
  • Author(s): Y. Takeuchi, K. Furuya, Y. Takahashi, C Zhang, A. Okada, B. Jinnai, H. Sato, S. Fukami and H. Ohno
  • Organizer: The 21st International Conference on Magnetism (ICM2018)
  • Int'l Joint Research
• [Presentation] Extended harmonic Hall measurement of spin-orbit torques in high-resistivity-W/CoFeB/MgO (2018)
  • Author(s): Y. Takeuchi, C. Zhang, A. Okada, H. Sato, S. Fukami, and H. Ohno
  • Organizer: 7th Workshop of the Core-to-Core Project Tohoku-York-Kaiserslautern
  • Int'l Joint Research
• [Presentation] Harmonic measurement of current induced spin-orbit torques in high-resistivity-W/CoFeB/MgO (2018)
  • Author(s): Y. Takeuchi, C. Zhang, A. Okada, H. Sato, S. Fukami, and H. Ohno
  • Organizer: IEEE International Magnetics Conference (INTERMAG 2018)
  • Int'l Joint Research
• [Presentation] Evaluation of write-error rate of spin-orbit torque induced magnetization switching (2018)
  • Author(s): K. Miyasaka, T. Saino, C. Zhang, S. Fukami and H. Ohno
  • Organizer: 第37回電子材料シンポジウム
• [Presentation] Enhancement of spin-orbit torque efficiency in W/CoFeB/MgO by engineering W resistivity (2018)
  • Author(s): K. Furuya, Y. Takeuchi, Y. Takahashi, C. Zhang, A. Okada, B. Jinnai, S. Fukami and H. Ohno
  • Organizer: 第37回電子材料シンポジウム
• [Presentation] Magnetization switching combining spin-orbit torque and spin-transfer torque (2018)
  • Author(s): C. Zhang, Y. Takeuchi, Y. Takahashi, S. Fukami, and H. Ohno
  • Organizer: 第79回応用物理学会秋季学術講演会
• [Patent(Industrial Property Rights)] Magnetoresistance effect element and magnetic memory device (2018)
  • Inventor(s): S. Fukami, C. Zhang et al.
  • Industrial Property Rights Holder: S. Fukami, C. Zhang et al.
  • Industrial Property Rights Type: 特許
  • Filing Date: 2018
  • Acquisition Date: 2018
  • Overseas