Improve the understanding of the mechanism of spin-orbit torque induced magnetization reversal and construct the material and device technologies based on it
| Project/Area Number |
18K13796
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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| Research Institution | Tohoku University |
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Principal Investigator |
Zhang Chaoliang 東北大学, 学際科学フロンティア研究所, 助教 (80807678)
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| Project Period (FY) |
2018-04-01 – 2021-03-31
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| Project Status |
Completed (Fiscal Year 2020)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2020: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2019: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2018: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | スピントロニクス / スピン軌道トルク |
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| Outline of Final Research Achievements |
Magnetoresistive random-access memory has attracted significant attention these years as a promising alternative to the current volatile random-access memory technologies. Since it stores information as the magnetization directions of ferromagnetic thin films in magnetic tunnel junctions (MTJs), no energy is required to retain bit information. Meanwhile, the schemes which can reverse the magnetization direction with lower power consumption and faster speed become extremely important. In this work, we systematically study the magnetization reversal via spin-transfer torque (STT) and spin-orbit torque (SOT) in the ultra-fast regime 200 ps < tp < 1ns. We find that low-current fast switching can be achieved by modifying the combination of STT and SOT. Our findings are expected to provide clues for understanding the magnetization reversal mechanism with STT&SOT and eventually pave the way towards the nonvolatile spintronics device with high-speed and low-power-consumption performance.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究により、高性能なSOT-MTJ素子の材料設計、デバイス設計に関する系統的な理解が得られる。これらの知見を応用することで、製造が容易な構造で、高速動作、高信頼性、高い書き込み耐性を実現できるメモリ素子の実現が期待される。このため学術界に大きなインパクトを与える同時に、産業界へも高い貢献にもつながると考えられる。
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Report
(4 results)
Research Products
(43 results)
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[Presentation] Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage2020
Author(s)
M. Natsui,A. Tamakoshi,H. Honjo,T. Watanabe,T. Nasuno,C. Zhang,T. Tanigawa,H. Inoue,M. Niwa,T. Yoshiduka,Y. Noguchi,M. Yasuhira,Y. Ma,H. Shen,S. Fukami,H. Sato,S. Ikeda,H. Ohno,T. Endoh,T. Hanyu
Organizer
Symposia on VLSI Technology and Circuits
Related Report
Int'l Joint Research
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[Presentation] First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology2019
Author(s)
H. Honjo, A. Nguyen Thi Van, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshizuka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. Ma, H. Koike, Y. Takahashi, K. Furuya, H. Shen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
Organizer
2019 IEEE International Electron Devices Meeting (IEDM2019)
Related Report
Int'l Joint Research
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