Development of novel fabrication process of amorphous oxide semiconductor using field effect
| Project/Area Number |
18K13990
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 26020:Inorganic materials and properties-related
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Keisuke Ide 東京工業大学, 科学技術創成研究院, 助教 (70752799)
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| Project Period (FY) |
2018-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2019: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2018: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | アモルファス酸化物半導体 / 電界効果トランジスタ / 欠陥制御 |
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| Outline of Final Research Achievements |
Amorphous oxide semiconductor (AOS) represented by amorphous In-Ga-Zn-O has been widely applied for various practical displays. To develop further future display, high-mobility and large-band gap AOS is necessary. However, it is known that the controlling defect formation of high-performance AOS is difficult.
In this study, we developed a novel process of AOS using hydrogen doping. Amorphous gallium oxide (a-GaO) has ultra wide-bandgap larger than 4 eV and is suitable for transparent devices. However, it is difficult to enhance the carrier density of a-GaO; the ever-reported carrier density was only 10^14 cm-3. We succeed to enhance the carrier density of a-GaO up to 5x10^15 cm-3 and improve the operation voltage of a-GaO transistors by using our process.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究は、新規作製プロセスの開発にとどまらず、さらに発展してAOS中の欠陥の起源解明、環境フレンドリーな水素を使った手法への展開、さらには実デバイスの実証を行ったものである。特に今回着目したアモルファス酸化ガリウムは、室温で作製できる唯一の超ワイドバンドギャップ半導体であり、その一番の課題であるキャリアドーピングの課題を解決しうるものである。今後のフレキシブルパワーエレクトロニクス発展へ寄与できる結果であると考えられる。
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Report
(3 results)
Research Products
(24 results)
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[Journal Article] Multiple Color Inorganic Thin-Film Phosphor, RE-Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature2018
Author(s)
N. Watanabe, K. Ide, J. Kim, T. Katase, H. Hiramatsu, H. Hosono, T. Kamiya
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Journal Title
Phys. Status Solidi A
Volume: N/A
Issue: 5
Pages: 1700833-1700833
DOI
Related Report
Peer Reviewed / Open Access
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[Presentation] Light emitting diodes on glass using amorphous oxide semiconductor thin-film phosphors, rare-earth doped a-Ga-O2019
Author(s)
aoto Watanabe, Keisuke Ide, Takayoshi Katase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
Organizer
Materials Research Meeting 2019
Related Report
Int'l Joint Research
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[Presentation] Low-temperature fabrication of multi-color thin-film phosphor and light emitting diodes using amorphous oxide semiconductor, rare-earth doped a-Ga-O2019
Author(s)
Naoto Watanabe, Keisuke Ide, Takayoshi Katase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
Organizer
11th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics
Related Report
Int'l Joint Research
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[Presentation] アモルファス酸化物半導体a-GaOxをホストとする蛍光体を用いた直流駆動型発光素子の低温作製2019
Author(s)
渡邉脩人, 井手啓介, 片瀬貴義, 笹瀬雅人, 戸田喜丈, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫
Organizer
第66回応用物理学会春季学術講演会
Related Report
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