| Project/Area Number |
18K14096
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 28030:Nanomaterials-related
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
JEVASUWAN Wipakorn 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究員 (40748216)
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| Project Period (FY) |
2018-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2019: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2018: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | Nanostructures / Nanowires / Silicon / Germanium / Nanowire / Vapor-liquid-solid / Aluminum / nanowire / silicon / aluminium |
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| Outline of Final Research Achievements |
The multi-functional aluminium (Al)-catalyzed silicon nanowire (SiNW) growths on the controlling of surface transformation were successfully performed. The effects of growth parameters on SiNW formation using a vapor-liquid-solid (VLS) mechanism were studied. The SiNW properties for photovoltaic applications were obtained extremely low light reflectance below 10% and the Al doping concentration of less than 1019 cm-3 range. The Al-catalyzed SiNW-based solar cell fabrication was realized with an efficiency higher than 9% with complete Al catalyst removal. Thin SiNW solar cells provided by pre-chemical etch and post-mechanical polish for developing into the flexible devices were achieved the efficiency upon 5.0%. The core-shell and core-double-shell NW structures of p-Si and i-Ge were studied for NW transistor applications. The thin B-doped Si intermediate layer and B doping in the p-Si shell outermost layer successfully improved the ability of carrier generation.
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| Academic Significance and Societal Importance of the Research Achievements |
All functionalized SiNW formations together with device demonstration encourage the increased ability to widespread SiNW-based applications with low-cost materials and high throughput techniques as new alternative SiNWs and nanostructures providing for future technology.
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