| Project/Area Number |
18K14141
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 30010:Crystal engineering-related
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
SANG Liwen 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 独立研究者 (90598038)
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| Project Period (FY) |
2018-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2019: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2018: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 窒化物半導体 / 電界効果トランジスタ / 窒化物 / MOSFET / 集積回路 |
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| Outline of Final Research Achievements |
1)The two-dimensional hole gas at the InGaN/GaN was successfully achieved by experiment. The growth conditions were optimized and a super-thin GaN interlayer was utilized to improve the hole concentration. 2)The p-channel MOSFETs were successfully fabricated, which can be working at the temperature as low as 8K. The interface defects at the MOS was reduced by using the two-step treatment and oxygen-free gate dielectric layrs. 3)The InGaN/GaN p-channel heterojunction was deposited on the AlGaN/GaN HEMT wafer to fabricate the complementary power CMOS circuits. The lattice mismatch was investigated, and high-quality heterojunction was obtained. Both the n-channel and p-channel MOSFETs were fabricated. The device performance was characterized.
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| Academic Significance and Societal Importance of the Research Achievements |
In recent years, with the power increasing of GaN electronic devices, the current Si-based integrated circuits can not meet high-power operations. Our proposed GaN-based CMOS to drive GaN electronic devices is promising and can be energy-saving, environment freely, and compact in size.
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