| Project/Area Number |
18K19016
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| Research Category |
Grant-in-Aid for Challenging Research (Exploratory)
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| Allocation Type | Multi-year Fund |
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| Review Section |
Medium-sized Section 29:Applied condensed matter physics and related fields
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2018-06-29 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2019: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2018: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | 酸化ハフニウム基強誘電体 / 圧電性 / HfO2基強誘電体 |
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| Outline of Final Research Achievements |
This study tries to grow thick ferroelectric HfO2 films for Piezo MEMS applications. 1 micrometer-thick ferroelectric HfO2-based films were successfully grown. Ferroelectric property of these films was almost independent of the film thickness. Moreover, epitaxial films with {100} orientation were obtained on (100)ITO//(100)YSZ and (100)ITO//(100)YSZ/(100)Si substrates. Piezoresponse of these films was 2-3 pm/V. Finally, a micrometer -thick ferroelectric films were obtained even by room temperature deposition.
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| Academic Significance and Societal Importance of the Research Achievements |
HfO2はトランジスターのゲート酸化物で実用になっており、Si基の半導体プロセスと高い親和性を有する。従来の圧電体はこのプロセスとの親和性が低く、圧電MEMSの実用化はなかなか進んでこなかった。本研究によって、HfO2基の強誘電体が圧電MEMSで必要な１μmまでの厚膜化が実現できたこと、室温プロセスが実現できたことは、圧電MEMSへのHfO2の応用の可能性を開いた研究と言え、その社会的意義は大きい。
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