• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Direct bonding of widegap semiconductors and diamond for high-efficiency devices and investigation of bonding interface characteristics

Research Project

Project/Area Number 18K19034
Research Category

Grant-in-Aid for Challenging Research (Exploratory)

Allocation TypeMulti-year Fund
Review Section Medium-sized Section 30:Applied physics and engineering and related fields
Research InstitutionOsaka City University

Principal Investigator

Shigekawa Naoteru  大阪市立大学, 大学院工学研究科, 教授 (60583698)

Co-Investigator(Kenkyū-buntansha) 嘉数 誠  佐賀大学, 理工学部, 教授 (50393731)
梁 剣波  大阪市立大学, 大学院工学研究科, 准教授 (80757013)
Project Period (FY) 2018-06-29 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2019: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2018: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Keywordsダイヤモンド / ワイドギャップ半導体 / 直接接合 / 熱処理効果 / 界面中間層 / 熱処理 / 界面熱抵抗 / Si / Al / Cu / 表面活性化接合 / 固相固相界面
Outline of Final Research Achievements

Diamond FETs were successfully fabricated by growing diamond epi layers on single crystal diamonds directly bonded to Si substrates and performing device process, which indicated that the directly-bonded interfaces are equipped with enough thermal tolerance from the practical viewpoint. GaN epi layers were successfully bonded to diamonds. The bonding interfaces revealed a thermal tolerance at 600 degrees Celsius. TEM observation of GaN/diamond junctions revealed that the intermediate layer formed at bonding interfaces got thinned by annealing. Al and Cu were also bonded to diamonds. The bonding interfaces revealed the thermal tolerance up to temperatures close to the metling points of metals.

Academic Significance and Societal Importance of the Research Achievements

接合直後のダイヤモンドと異種材料(GaN、金属)の直接接合界面が準安定状態にあることを示すとともに、ダイヤモンド/Si界面において、界面の耐熱性の起源を示唆する結果を得た。ダイヤモンド/GaN界面がGaN素子作製プロセスに必要な耐熱性を有することを示し、従来技術を凌ぐ高熱伝導率GaN素子を実現可能であることを明らかにした。

Report

(3 results)
  • 2019 Annual Research Report   Final Research Report ( PDF )
  • 2018 Research-status Report
  • Research Products

    (24 results)

All 2020 2019 2018 Other

All Int'l Joint Research (2 results) Journal Article (6 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 6 results) Presentation (14 results) (of which Int'l Joint Research: 8 results) Patent(Industrial Property Rights) (2 results)

  • [Int'l Joint Research] ブリストル大学(英国)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] University of Bristol(英国)

    • Related Report
      2018 Research-status Report
  • [Journal Article] Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management2020

    • Author(s)
      J. Liang, Y. Ohno, Y. Yamashita, Y. Shimizu, S. Kanda, N. Kamiuchi, S-W Kim, K. Koyama, Y. Nagai, M. Kasu, and N. Shigekawa
    • Journal Title

      Appl. Nano Materials

      Volume: 3 Issue: 3 Pages: 2455-2462

    • DOI

      10.1021/acsanm.9b02558

    • NAID

      120007002299

    • URL

      https://ocu-omu.repo.nii.ac.jp/records/2019587

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of diamond/Cu direct bonding interface for power device applications2020

    • Author(s)
      S. Kanda, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, and J. Liang
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SB Pages: SBBB03-SBBB03

    • DOI

      10.7567/1347-4065/ab4f19

    • NAID

      210000157393

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 半導体基板の常温直接接合技術2020

    • Author(s)
      重川直輝、梁 剣波
    • Journal Title

      電子情報通信学会和文論文誌C

      Volume: J103-C

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Annealing effect of surface-activated bonded diamond/Si interface2019

    • Author(s)
      Liang Jianbo、Zhou Yan、Masuya Satoshi、Gucmann Filip、Singh Manikant、Pomeroy James、Kim Seongwoo、Kuball Martin、Kasu Makoto、Shigekawa Naoteru
    • Journal Title

      Diamond and Related Materials

      Volume: 93 Pages: 187-192

    • DOI

      10.1016/j.diamond.2019.02.015

    • NAID

      120007003475

    • URL

      https://ocu-omu.repo.nii.ac.jp/records/2019804

    • Related Report
      2018 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Room-temperature direct bonding of diamond and Al2019

    • Author(s)
      Liang Jianbo、Yamajo Shoji、Kuball Martin、Shigekawa Naoteru
    • Journal Title

      Scripta Materialia

      Volume: 159 Pages: 58-61

    • DOI

      10.1016/j.scriptamat.2018.09.016

    • NAID

      120006957157

    • URL

      https://ocu-omu.repo.nii.ac.jp/records/2020485

    • Related Report
      2018 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Stability of Diamond/Si Bonding Interface during Device Fabrication Process2018

    • Author(s)
      Liang Jianbo、Masuya Satoshi、Kim Seongwoo、Oishi Toshiyuki、Kasu Makoto、Shigekawa Naoteru
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 1 Pages: 016501

    • DOI

      10.7567/1882-0786/aaeedd

    • NAID

      120006770046

    • URL

      https://ocu-omu.repo.nii.ac.jp/records/2019625

    • Related Report
      2018 Research-status Report
    • Peer Reviewed
  • [Presentation] GaN/多結晶ダイヤモンド直接接合の作製及び特性評価2020

    • Author(s)
      小林 礼佳、清水 康雄、大野 裕、金 聖祐、小山 浩司、嘉数 誠、重川 直輝、梁 剣波
    • Organizer
      2020年 第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 高出力パワーデバイス応用に向けたGaN/Diamond直接接合の作製2019

    • Author(s)
      梁 剣波、清水 康雄、大野 裕、白崎 謙次、永井 康介、嘉数 誠、金 聖祐、Kuball Martin、重川 直輝
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] GaAs/Diamond直接接合の界面評価2019

    • Author(s)
      中村 祐志、清水 康雄、大野 裕、詹 天卓、山下 雄一郎、白崎 謙次、永井 康介、渡邊 孝信、嘉数 誠、重川 直輝、梁 剣波
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Fabrication of GaAs/diamond direct bonding for high power device applications2019

    • Author(s)
      Y. Nakamura, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, and J. Liang
    • Organizer
      13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications2019

    • Author(s)
      J. Liang, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, S. Kim, M. Kasu, M. Kuball, and N. Shigekawa
    • Organizer
      13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Direct Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature2019

    • Author(s)
      Jianbo Liang, Makoto Kasu, Martin Kuball and Naoteru Shigekawa
    • Organizer
      13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effect of annealing temperature on diamond/Si interfacial structure2019

    • Author(s)
      J. Liang, Y. Zhou, S. Masuya ; F. Gucmann, M. Singh, J. Pomeroy, S. Kim, M. Kuball, M. Kasu, N. Shigekawa
    • Organizer
      2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fabrication of Diamond/Cu Direct Bonding for Power Device Application2019

    • Author(s)
      S. Kanda, S. Masuya, M. Kasu, N. Shigekawa, and J. Liang
    • Organizer
      2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Direct bonding of diamond and Cu at room temperature for power device application2019

    • Author(s)
      J. Liang, N. Shigekawa
    • Organizer
      13th New Diamond and Nano Carbons Conference (NDNC 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] パワーデバイス応用に向けたダイヤモンド/Cu直接接合の形成2019

    • Author(s)
      梁 剣波、神田 進司、桝谷 聡士、嘉数 誠、重川 直輝
    • Organizer
      2019年 第66回応用物理学会春季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] 高出力デバイス応用に向けたGaAs/Diamond直接接合の作製2019

    • Author(s)
      中村 祐志、桝谷 聡士、嘉数 誠、重川 直輝、梁 剣波
    • Organizer
      2019年 第66回応用物理学会春季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] Siと接合したダイヤモンド基板上のFETの作製2018

    • Author(s)
      神田 進司、山條 翔二、Martin Kuball、重川 直輝、梁 剣波
    • Organizer
      2018年第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] Room-Temperature Direct Bonding of Diamond to Aluminum2018

    • Author(s)
      Jianbo Liang, Shoji Yamajo, Martin Kuball and Naoteru Shigekawa
    • Organizer
      New Diamond and Nano Carbons Conference (NDNC 2018)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] The combination of Diamond devices with Si LSI by surface activated bonding2018

    • Author(s)
      Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu, and Naoteru Shigekawa
    • Organizer
      29th International Conference on Diamond and Carbon Materials
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Patent(Industrial Property Rights)] 特許権2019

    • Inventor(s)
      梁剣波、重川直輝
    • Industrial Property Rights Holder
      梁剣波、重川直輝
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2019-125039
    • Filing Date
      2019
    • Related Report
      2019 Annual Research Report
  • [Patent(Industrial Property Rights)] 知的財産権2018

    • Inventor(s)
      梁剣波、重川直輝、嘉数誠
    • Industrial Property Rights Holder
      梁剣波、重川直輝、嘉数誠
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2018-094186
    • Filing Date
      2018
    • Related Report
      2018 Research-status Report

URL: 

Published: 2018-07-25   Modified: 2021-02-19  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi