難固溶不純物原子添加半導体のナノ量子構造に関する実験的研究

• Project/Area Number: 19019008
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Osaka University
• Principal Investigator: 周 逸凱 Osaka University, 産業科学研究所, 助教 (60346179)
• Co-Investigator(Kenkyū-buntansha): 朝日 一 大阪大学, 産業科学研究所, 教授 (90192947) ; 長谷川 繁彦 大阪大学, 産業科学研究所, 准教授 (50189528) ; 江村 修一 大阪大学, 産業科学研究所, 助教 (90127192)
• Project Period (FY): 2007 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥5,300,000 (Direct Cost: ¥5,300,000); Fiscal Year 2008: ¥2,300,000 (Direct Cost: ¥2,300,000); Fiscal Year 2007: ¥3,000,000 (Direct Cost: ¥3,000,000)
• Keywords: スピンエレクトロニクス / 半導体物性 / MBE / ナノ材料 / 結晶工学

Research Abstract

本研究では、分子線エピタキシー(MBE)装置を用いて、Cr及びGdを縦型自己形成ナノ細線構造に添加し、実際に磁性不純物濃度及び細線形状を制御しやすいGaCrN及びGaGdNナノロッドを作製する。更に、それらの基本物性を明らかにし、スピンメモリデバイス作製を試みる。本年度は以下のような成果を得た。
(1)GaGdNナノロッドはMBE法により、Si基板上に成長された。Gdの化合物の生成を抑えるために、成長温度をやや低くし、約550℃で成長を行った。走査型電子顕微鏡の観察により、成長温度を低くしてもGaGdNナノロッドの結晶成長ができることがわかった。
(2)Gdセル温度を変え、異なるGd濃度のGaGdNナノロッドを作製し、その形状のGd濃度依存性を調べた。Gd濃度が高いほうが、ナノロッドの径が太くなるとわかった。磁化測定からGaGdNナノロッドが室温強磁性を示し、スピンメモリデバイスの基本材料として、要求している一つ重要な特性を持つことがわかった。
(3)スピンメモリデバイスの一つ基本構造となるGaCrN/AIN多重量子Diskナノロッドを作製し、ナノロッド径は一様な太さで成長することが確認でき、スピンメモリデバイスでは欠かせないGaCrN/AINヘテロをナノロッド中に作製することができた。スピンメモリデバイスの作製に一つの大きな問題点を解決した。また、この様な構造もより磁気特性の良いGaGdNを利用して作製することができる。

Research Products

• [Journal Article] Structural and magnetic properties of GaGdN/GaN superlattice structures (2009)
  • Author(s): Y. K. Zhou, S. W. Choi, S. Kimura, S. Emura, S. Hasegawa and H. Asahi
  • Journal Title: Thin Solid Films (印刷中)
  • Peer Reviewed
• [Journal Article] Crystal growth and characterization of GaCrN nanorods on Si substrate (2009)
  • Author(s): H. Tambo, S. Kimura, Y. Yamauchi, Y. Hiromura, S. Emura, S. Hasegawa and H. Asahi
  • Journal Title: Journal of Crystal Growth (印刷中)
  • Peer Reviewed
• [Journal Article] Structural properties of AlCrN, GaCrN and InCrN (2009)
  • Author(s): S. Kimura, K. Tolcuda, Y. K. Zhou, S. Ernura, S. Hasegawa and H. Asahi
  • Journal Title: J. Crystal Growth (印刷中)
  • Peer Reviewed
• [Journal Article] Formation of aligned CrN nanoclusters in Cr-delta-doped GaN (2009)
  • Author(s): Y. K. Zhou, S. Kimura, S. Emura, S. Hasegawa, and H. Asahi
  • Journal Title: J. Phys. : Condens. Matter 21
  • Peer Reviewed
• [Journal Article] Electronic structure of Ga1-xCrxN and Si-doping effects studied by photoemission and X-ray absorption spectroscopy (2008)
  • Author(s): G S. Song, M. Kobayashi, J. I. Hwang, T. Kataoka, M. Takizawa, A. Fujimori, T. Ohkouchi, Y Takeda, T. Okane, Y. Saitoh, H. Yamagami, F.H. Chang, L. Lee, H-J. Lin, D. J. Huang, C. T. Chen, S. Kimura, M. Funakoshi, S. Hasegawa, and H. Asahi
  • Journal Title: Phys. Rev. B 78
  • Peer Reviewed
• [Journal Article] Growth and characterization of InCrN and(In, Ga, Cr)N (2008)
  • Author(s): S. Kimura, S. Emura, K. Tokuda, Y. Hiromura, S. Hayakawa, Y. K. Zhou, S. Hasegawa, and H. Asahi
  • Journal Title: Phys. Stat. Sol. c 5 Pages: 1532-1535
  • Peer Reviewed
• [Journal Article] Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures (2008)
  • Author(s): Y. K. Zhou, S. W. Choi, S. Emura, S. Hasegawa, and H. Asahi
  • Journal Title: Appl. Phys. Lett. 92 92
  • Peer Reviewed
• [Journal Article] Low temperature molecular-beam epitaxy growth of cubic GaCrN (2008)
  • Author(s): S. Kimura, S. Emura, Y Yamauchi, Y. K. Thou_ S. Hasegawa, and H. Asahi
  • Journal Title: J. Cryst. Growth 310 Pages: 40-46
  • Peer Reviewed
• [Journal Article] Low temperature molecular-beam cpitaxy growth of cubic GaCrN (2008)
  • Author(s): S., Kimura
  • Journal Title: J. Cryst. Growth 310 Pages: 40-46
  • Peer Reviewed
• [Journal Article] Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatuers (2008)
  • Author(s): Y.K., Zhou
  • Journal Title: Appl. Phys. Lett 92
  • Peer Reviewed
• [Journal Article] Growth and characterization of InCrN and (In,Ga,Cr)N (2008)
  • Author(s): S., Kimura
  • Journal Title: Phys. Stat. Sol. (印刷中)
  • Peer Reviewed
• [Journal Article] High Gd concentration GaGdN grown at low temperatures (2008)
  • Author(s): Y.K., Zhou
  • Journal Title: Journal of Superconductivity and Novel Magnetism (印刷中)
  • Peer Reviewed
• [Journal Article] Molecular-beam epitaxy epitaxy growth and characterization of ferromagnetic cubic GaCrN on GaAs substrate (2007)
  • Author(s): S., Kobayashi
  • Journal Title: J. Cryst. Growth 308 Pages: 58-62
  • Peer Reviewed
• [Journal Article] Growth and Characterization of Ferromagnetic Cubic GaCrN: Structural and magnetic properties (2007)
  • Author(s): S., Kimura
  • Journal Title: J. Cryst. Growth 301-302 Pages: 651-655
  • Peer Reviewed
• [Journal Article] Cr atom alignment in Cr-deIta-doped GaN (2007)
  • Author(s): S., Kimura
  • Journal Title: American Institute of Physics CP 882 Pages: 410-412
• [Presentation] Ferromagnetism and Luminescence of Diluted Magnetic Semiconductors GaGdN and AlGdN (2008)
  • Author(s): S. Emura, M. Takahashi, H. Tambo, T. Nakamura, Y. K Zhou, S. Hasegawa, and H. Asahi
  • Organizer: 2008 Materials Research Society Fall Meeting
  • Place of Presentation: ボストン(来国)(招待講演)
  • Year and Date: 2008-12-02
• [Presentation] Growth and characterization of transition-metal and rare-earth doped III-nitride based mannetic semiconductors for nano-snintronics (2008)
  • Author(s): H. Asahi, S. Hasegawa, S. Emura, and Y. K. Zhou
  • Organizer: 4th Handai Nanoscinece ahd Nanotechnology International Symposium
  • Place of Presentation: 大阪(招待講演)
  • Year and Date: 2008-10-01
• [Presentation] Crystal growth and characterization otGaCrN nanorods on Si substrate (2008)
  • Author(s): H. Tambo, S. Kimura, Y. Yamauchi, Y. Hiromura, S. Emura, S. Hasegawa and H. Asahi
  • Organizer: The 2nd International Symposium on Growth of III-Nitrides
  • Place of Presentation: 伊豆
  • Year and Date: 2008-10-01
• [Presentation] Magnetic properties of GaGdN studied by SQUID and SX-MCD (2008)
  • Author(s): M. Takahashi, Y. K. Thou, S. Emura, T. Nakamura. S. Hasegawa. and H Asahi
  • Organizer: 5th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors
  • Place of Presentation: Foz do Iguacu(ブラジル)
  • Year and Date: 2008-08-05
• [Presentation] Annealing effect in GaDyN on optical and magnetic properties (2008)
  • Author(s): Y. K. Zhou, M. Takahashi, S. Emura, S. Hasegawa, H. Asahi
  • Organizer: 5th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors
  • Place of Presentation: Foz do Iguacu(ブラジル)
  • Year and Date: 2008-08-04
• [Presentation] Structural properties of AICrN, GaCrN and InCrN (2008)
  • Author(s): S. Kimura, K. Tokuda, Y. K. Zhou, S. Emura, S. Hasegawa and H. Asahi
  • Organizer: 15th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: バンクーバー(カナダ)
  • Year and Date: 2008-08-04
• [Presentation] Third magnetic phase of GaGdN detected by SX-MCD (2008)
  • Author(s): M. Takahashi, Y. Hiromura, S. Emura, T. Nakamura Y. K. Zhou, S. Hasegawa, and H Asahi
  • Organizer: 29th International Conference on Physics of Semiconductors
  • Place of Presentation: リオテジャネイロ(ブラジル)
  • Year and Date: 2008-07-30
• [Presentation] Orbital ordering on dilute Cr3+ions doped in GaN (2008)
  • Author(s): S. Emura, S. Kimura, K. Tokuda, Yi-Kai Zhou, S. Hasegawa and H Asahi
  • Organizer: 29th International Conference on Physics of Semiconductors
  • Place of Presentation: リオデジャネイロ(ブラジル)
  • Year and Date: 2008-07-29
• [Presentation] Formation of aligned CrN nano-clusters in Cr-delta-doped GaN (2008)
  • Author(s): Y. K. Thou, S. Kimura, S. Emura, S. Hasegawa and H. Asahi
  • Organizer: International Conference on Quantum Simulators and Design 2008
  • Place of Presentation: 東京
  • Year and Date: 2008-06-01
• [Presentation] GdをドープしたGaNナノロッドの成長と局所構造評価 (2008)
  • Author(s): 亀岡恒志
  • Organizer: 第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-30
• [Presentation] Si基板上GaCrNナノロッドの作製とその評価 (2) (2008)
  • Author(s): 丹保浩行
  • Organizer: 第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-30
• [Presentation] 四元混晶(A1,Ga,Cr)Nの結晶成長とその局所構造評価 (2008)
  • Author(s): 徳田克彦
  • Organizer: 第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-29
• [Presentation] GaGdN薄膜のSX-MCDによる磁性評価 (2008)
  • Author(s): 高橋政寛
  • Organizer: 第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-28
• [Presentation] GaDyNの結晶成長及びその物性 (2008)
  • Author(s): 周逸凱
  • Organizer: 第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-28
• [Presentation] 低温成長アンドープGaGdN及びSiドープGaGdNの諸特性 (2007)
  • Author(s): 周逸凱
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-07
• [Presentation] 四元混晶(In,Ga,Cr)Nの結晶成長とそ物性 (2007)
  • Author(s): 木村重哉
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-06
• [Presentation] MBE Growth and Characterization of Rare-Earth Doped Nitride Semiconductors for Spintronice (2007)
  • Author(s): H, Asahi
  • Organizer: E-MRS-2007
  • Place of Presentation: フランス・ストラスブール
• [Presentation] Enhancement of magnetic moment in GaGdN/GaN superlattice structure (2007)
  • Author(s): Y, K, Zhou
  • Organizer: ChinaNANO 2007
  • Place of Presentation: 中国・北京
• [Presentation] High Gd concentration GaGdN grown at low temprature (2007)
  • Author(s): Y, K, Zhou
  • Organizer: SpinTech-IV
  • Place of Presentation: 米国・ハワイ
• [Presentation] Enhancement of magnetic moment in GaGdN/GaN superlattice structure (2007)
  • Author(s): Y, K, Zhou
  • Organizer: Material Today Asia
  • Place of Presentation: 中国・北京
• [Presentation] Growht and characterizatin of InCrN and (In,Ga,Cr)N dilute magnetic semiconductors (2007)
  • Author(s): S, Kimura,
  • Organizer: 7th Internatioonal Conference on Nitride Semiconductors
  • Place of Presentation: 米国・ラスベガス
• [Book] 薄膜ハンドブック(分担執筆) (2008)
  • Author(s): 朝日一
  • Total Pages: 5
  • Publisher: オーム社
• [Remarks]
  • URL: http://www.sahken.osaka-u.ac.jp/labs/pem/
• [Remarks]
  • URL: http://www.sanken.osaka-u.ac.jp/labs/pem/