• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

III族窒化物半導体混晶の欠陥準位・表面準位の評価と制御

Research Project

Project/Area Number 19032001
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionHokkaido University

Principal Investigator

橋詰 保  Hokkaido University, 量子集積エレクトロニクス研究センター, 教授 (80149898)

Co-Investigator(Kenkyū-buntansha) 佐藤 威友  北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50343009)
金子 昌充  北海道大学, 量子集積エレクトロニクス研究センター, 非常勤研究員 (70374709)
Project Period (FY) 2007 – 2008
Project Status Completed (Fiscal Year 2008)
Budget Amount *help
¥8,700,000 (Direct Cost: ¥8,700,000)
Fiscal Year 2008: ¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 2007: ¥4,300,000 (Direct Cost: ¥4,300,000)
KeywordsGaN / AlGaN / DLTS / 深い準位 / 表面準位 / 表面伝導 / 電気化学プロセス / 表面酸化
Research Abstract

発光素子の効率・安定動作・信頼性には、バルクの結晶欠陥とともに、ヘテロ界面での禁制帯内連続電子準位(界面準位)や端面での表面準位の特性が影響する場合が多いが、これらの特性は明らかになっていない。本研究では、GaNおよびAlGaNのバルク欠陥準位と表面・端面・ヘテロ界面における表面電子準位を詳細に評価し、その特性の理解と制御を目的として研究を展開した。
1) Al組成26%のAlGaN混晶にショットキー接合を形成し、暗中および光照射下での過渡容量応答評価を行なった。伝導帯下端より1.0eVおよび禁制帯中央付近の深い準位からの応答を検出し、詳しい解析の結果、5-8×10^<16>cm^<-3>程度の比較的高い密度を有することを明らかにした。
2) 保護膜高温熱処理によるp-GaN表面の特性変化を詳細に評価した。XPS解析より1000℃以上の熱処理によりGa原子の外方拡散とMg原子の表面偏析が明らかになった。また、電流-電圧測定とPL評価より深い準位の生成による表面抵抗の増大が観測され、Ga空孔や格子間Mgに関連する複合欠陥の存在が示唆された。
3) 電気化学酸化によるGaNおよびAlGaNの表面制御を検討した。酸化膜を溶液除去した表面に金属接合を形成した場合、接合特性の均一性が向上することが確認された。また、ドライエッチングで形成したナノ細線側面を選択的に酸化した場合、細線の伝導特性が向上することが明らかになった。これらの結果より、電気化学酸化による表面欠陥や表面準位の低減が確認され、表面制御に適用できる事を示した。

Report

(2 results)
  • 2008 Annual Research Report
  • 2007 Annual Research Report
  • Research Products

    (35 results)

All 2009 2008 2007 Other

All Journal Article (13 results) (of which Peer Reviewed: 13 results) Presentation (19 results) Remarks (3 results)

  • [Journal Article] Effects of native oxide formation on AlGaN on DC characteristics of AlGaN/GaN high-electron-mobility transistors2009

    • Author(s)
      T. Tajima, J. Kotani and T. Hashizume
    • Journal Title

      Jpn. J. Appl. Phys. 48

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] UV-induced variation of interface potential in the AlOx/n-GaN structure2009

    • Author(s)
      C. Mizue, J. Kotani, M. Miczek, and T. Hashizume
    • Journal Title

      Jpn. J. Appl. Phys. 48

    • NAID

      40016464704

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of carbon incorporation on electric properties of n-type GaN surfaces2009

    • Author(s)
      T. Kimura and T. Hashizume
    • Journal Title

      J. Appl. Phys. 105

    • NAID

      120001102068

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improvements of Electronic and Optical Characteristics of n-GaN-based structures by Photoelectrochemical Oxidation in Glycol Solution2009

    • Author(s)
      N. Shiozaki and T. Hashizume
    • Journal Title

      J. Appl. Phys. 105

    • NAID

      120001152960

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Surface control of GaN alloys for photonic and electronic devices2009

    • Author(s)
      T. Hashizume, N. Shiozaki and K. Ohi
    • Journal Title

      Proc. of SPIE, Gallium Nitride Materials and Devices IV 7216

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of interface states and temperature on the C-V behavior of metal/insulator/A1GaN/GaN heterostructure capacitors2008

    • Author(s)
      M. Miczek, C. Mizue, T. Hashizume, and B. Adamowicz
    • Journal Title

      J. Appl. Phys. 103

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Temperature-dependent interface-state response in an Al_2O_3/n-GaN structure2008

    • Author(s)
      K. Ooyama, H. Kato, M. Miczek, and T. Hashizume
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 5426-5428

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Deposition of aluminum oxide layer on GaN using diethyl-aluminum-ethoxide as a precursor2008

    • Author(s)
      T. Uesugi, T. Kachi, M. Sugimoto, C. Mizue, and T. Hashizume
    • Journal Title

      J. Appl. Phys. 104

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors2008

    • Author(s)
      M. Miczek, C. Mizue, T. Hashizume, B. Adamowicz
    • Journal Title

      J. Appl. Phys. 103(In press)

    • NAID

      120000952722

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution With Glycol and Water2007

    • Author(s)
      N. Shiozaki, T. Sato, T. Hashizume
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 1471-1473

    • NAID

      10018900586

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical and deep-level characterization of GaP_<1-x>N_x grown by gas-source molecular beam epitaxy2007

    • Author(s)
      M. Kaneko, T. Hashizume, V. A. Odnoblyudov and C. W. Tu
    • Journal Title

      J. Appl. Phys. 101

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Chemical and Potential-Bending Characteristics of SiN_x/AlGaN Interfaces Preparedby In Situ Metal-Organic Chemical Vapor Deposition2007

    • Author(s)
      E. Ogawa, T. Hashizume, T. Ueda and T. Tanaka
    • Journal Title

      Jpn. J. Appl. Phys. 46

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures2007

    • Author(s)
      J. Kotani, M. Tajima, S. Kasai and T. Hashizume
    • Journal Title

      Appl. Phys. Lett. 91

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] (Invited) Surface control of GaN alloys for photonic and electronic devices2009

    • Author(s)
      T. Hashizume
    • Organizer
      Society of Photographic Instrumentation Engineers (SPIE), Photonics West
    • Place of Presentation
      San Hose, CA, USA
    • Related Report
      2008 Annual Research Report
  • [Presentation] (Invited) Surface control of AlGaN for the stability improvement of AlGaN/GaN HEMTs2008

    • Author(s)
      T. Hashizume
    • Organizer
      66th Device Research Conference(DRC-66)
    • Place of Presentation
      Univ. California, Santa Barbara, USA
    • Related Report
      2008 Annual Research Report
  • [Presentation] (Invited) Surface control structures for high-performance AIGaN/GaN HEMTs2008

    • Author(s)
      T. Hashizume
    • Organizer
      7th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2008)
    • Place of Presentation
      Smolenice, Slovakia
    • Related Report
      2008 Annual Research Report
  • [Presentation] Characterization of GaN surfaces after high-temperature annealing and carbon diffusion2008

    • Author(s)
      T. Kimura and T. Hashizume
    • Organizer
      Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2008)
    • Place of Presentation
      Sapporo
    • Related Report
      2008 Annual Research Report
  • [Presentation] Mesa-gate AlGaN/GaN HEMTs having narrow-width channels2008

    • Author(s)
      K. Ohi, T. Tamura, J. Kotani and T. Hashizume
    • Organizer
      2008 International Conference on Solid-State Devices and Materials(SSDM2008)
    • Place of Presentation
      Tsukuba
    • Related Report
      2008 Annual Research Report
  • [Presentation] Near-midgap deep levels in MOVPE-grown AlGaN2008

    • Author(s)
      K. Sugawara, J. Kotani and T. Hashizume
    • Organizer
      2008 International Conference on Solid-State Devices and Materials (SSDM2008)
    • Place of Presentation
      Tsukuba
    • Related Report
      2008 Annual Research Report
  • [Presentation] Control of Electronic States at n-GaN Surfaces by Photoelectrochemical Oxidation in Glycol Solution2008

    • Author(s)
      Nanako Shiozaki, Taketomo Sato, Tamotsu Hashizume
    • Organizer
      2008 International Workshop on Nitride Semiconductors (IWN-2008)
    • Place of Presentation
      Montreux, Swizerland
    • Related Report
      2008 Annual Research Report
  • [Presentation] Impurity incorporation and Ga outdiffusion at n-GaN surfaces during high-temperature annealing processes2008

    • Author(s)
      Takshi Kimura and Tamotsu Hashizume
    • Organizer
      2008 International Workshop on Nitride Semiconductors (IWN-2008)
    • Place of Presentation
      Montreux, Swizerland
    • Related Report
      2008 Annual Research Report
  • [Presentation] Depletion layer modulation at the Al_2O_3/n-GaN interface under UV-illumination2008

    • Author(s)
      Chihoko Mizue and Tamotsu Hashizume
    • Organizer
      2008 International Workshop on Nitride Semiconductors (IWN-2008)
    • Place of Presentation
      Montreux, Swizerland
    • Related Report
      2008 Annual Research Report
  • [Presentation] Variation of Mg density and conductivity at p-GaN surfaces caused by high-temperature anneal2008

    • Author(s)
      Eri Ogawa and Tamotsu Hashizume
    • Organizer
      2008 International Workshop on Nitride Semiconductors (IWN-2008)
    • Place of Presentation
      Montreux, Swizerland
    • Related Report
      2008 Annual Research Report
  • [Presentation] Impacts of Surface of Oxidation and Oxynitridation on DC Characteristics of AlGaN/GaN HEMTs2008

    • Author(s)
      Masafumi Tajima and Tamostu Hashizume
    • Organizer
      2008 International Workshop on Nitride Semiconductors (IWN-2008)
    • Place of Presentation
      Montreux, Swizerland
    • Related Report
      2008 Annual Research Report
  • [Presentation] Interface state characterization of insulating gates on AlGaN layers and AlGaN/GaN heterostructures2007

    • Author(s)
      C. Mizue, J. Kotani, M. Miczek, T. Hashizume
    • Organizer
      2007 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
    • Place of Presentation
      Osaka University Nakanoshima Center, Osaka, Japan
    • Related Report
      2007 Annual Research Report
  • [Presentation] Analysis of lateral surface leakage in the vicinity of Schottky gates in AlGaN/GaN HEMTs2007

    • Author(s)
      J. Kotani, M. Tajima, S. Kasai and T. Hashizume
    • Organizer
      65th Annual Device Research Conference (DRC-65)
    • Place of Presentation
      University of Notre Dame, South Bend, USA
    • Related Report
      2007 Annual Research Report
  • [Presentation] Characterization of thin native-oxide layer formed on GaN by photoelectrochemical process in glycol solution2007

    • Author(s)
      N. Shiozaki and T. Hashizume
    • Organizer
      International Conference on Nano Science and Technology (ICN+T 2007)
    • Place of Presentation
      Stockholm International Fairs, Stockholm, Sweden
    • Related Report
      2007 Annual Research Report
  • [Presentation] Characterization of deep levels in MOVPE-grown AlGaN by capacitance transient spectroscopy2007

    • Author(s)
      J. Kotani and T. Hahsizume
    • Organizer
      International Conference on Nano Science and Technology (ICN+T 2007)
    • Place of Presentation
      Stockholm International Fairs, Stockholm, Sweden
    • Related Report
      2007 Annual Research Report
  • [Presentation] Dynamic response of interface state charges in GaN MIS structures2007

    • Author(s)
      K. Ooyama, H. Kato, M. Miczek and T. Hashizume
    • Organizer
      2007 International Conference on Solid-State Devices and Materials (SSDM2007)
    • Place of Presentation
      Tsukuba International Congress Center, Tsukuba, Japan
    • Related Report
      2007 Annual Research Report
  • [Presentation] Correlation between chemical and electrical properties of p-GaN surfaces subjected to halogen-based plasma2007

    • Author(s)
      E. Ogawa, M. Sugimoto, T. Kachi, T. Uesugi, N. Soejima, T. Hashizume
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, USA
    • Related Report
      2007 Annual Research Report
  • [Presentation] High-quality native oxide of GaN for surface passivation formed by photo-enhanced electrochemical process2007

    • Author(s)
      N. Shiozaki, F. Ishikawa, A. Trampert, H. T. Grahn, T. Hashizume
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      MGM Grand Hotel, Las Vegas, USA
    • Related Report
      2007 Annual Research Report
  • [Presentation] The effects of interface states on C-V behavior of insulated gates on AlGaN/GaN heterostructures2007

    • Author(s)
      M. Miczek, C. Mizue and T. Hashizume
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      MGM Grand Hotel, Las Vegas, USA
    • Related Report
      2007 Annual Research Report
  • [Remarks] 北海道大学学術成果コレクション

    • URL

      http://eprints.lib.hokudai.acjp/dspace/

    • Related Report
      2008 Annual Research Report
  • [Remarks] 北海道大学量子集積エレクトロニクス研究センター

    • URL

      http://www.rciqe.hokudai.ac.jp

    • Related Report
      2008 Annual Research Report
  • [Remarks]

    • URL

      http://www.rciqe.hokudai.ac.jp

    • Related Report
      2007 Annual Research Report

URL: 

Published: 2007-04-01   Modified: 2018-03-28  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi