InNをベースとした長波長円偏光半導体レーザ創製に関する研究

• Project/Area Number: 19032006
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Osaka University
• Principal Investigator: 朝日 一 Osaka University, 産業科学研究所, 教授 (90192947)
• Co-Investigator(Kenkyū-buntansha): 長谷川 繁彦 大阪大学, 産業科学研究所, 准教授 (50189528) ; 江村 修一 大阪大学, 産業科学研究所, 助教 (90127192) ; 周 逸凱 大阪大学, 産業科学研究所, 助教 (60346179)
• Project Period (FY): 2007 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥7,600,000 (Direct Cost: ¥7,600,000); Fiscal Year 2008: ¥3,900,000 (Direct Cost: ¥3,900,000); Fiscal Year 2007: ¥3,700,000 (Direct Cost: ¥3,700,000)
• Keywords: 窒化物半導体 / スピンエレクトロニクス / 光物性 / 結晶工学 / MBE

Research Abstract

本研究では、InN窒化物半導体の潜在能力を活かし、長波長かつ円偏光の発光デバイスの創製を目指すものであり、そのためにInN, InGaNに遷移金属または希土類元素を添加して室温強磁性半導体を創製する。本年度は、プラズマ励起M3E法によりInCrN, GaGdNの低温成長、GaGdN/GaN超格子構造、GaDyN, InGaGdNの結晶成長とその評価を中心に研究を進め、次の成果を得た。
(1)遷移金属Cr添加InCrNの成長においては、350℃と低温で成長することにより、CrがInサイトを置換したInCrNが成長できることが分かった。(2)強磁性半導体GaGdNと非磁性半導体GaNからなるGaGdN/GaN超格子構造を成長し、相対的にGaGdN層が薄い場合にキャリア誘起による磁気モーメントの増大が観測された。(3)GaGdNを300℃の低温で成長することにより、Gd濃度を12.5%まで増加させることが可能となり、磁化の増大が観測された。GaGdN低温成長中にSiを共添加することにより、キャリア誘起強磁性の効果で更に磁化を増大させられることが分かった。(4)希土類原子Dy添加を添加したGaDyNでは、室温での強磁性、PL発光を観測すると共に、MCD測定においてGaNバンド端でのMCD信号の増大が観測された。(5)InGaNにGdを添加したInGaGdNの成長を試み、その成長を確認した。

Research Products

• [Journal Article] Structural and magnetic properties of GaGdN/GaN superlattice structures (2009)
  • Author(s): Y. K. Zhou, S. W. Choi, S. Kimura, S. Emura, S. Hasegawa, and H. Asahi
  • Journal Title: Thin Solid Films (印刷中)
  • Peer Reviewed
• [Journal Article] Crystal growth and characterization of GaCrN nanorods on Si substrate (2009)
  • Author(s): H. Tambo, S. Kimura, Y. Yamauchi, Y. Hiromura, S. Emura, S. Hasegawa, and H. Asahi
  • Journal Title: Journal of Crystal Growth (印刷中)
  • Peer Reviewed
• [Journal Article] Structural properties of AlCrN, GaCrN and InCrN (2009)
  • Author(s): S. Kimura, K. Tokuda, Y. K. Zhou, S. Emura, S. Hasegawa and H. Asahi
  • Journal Title: J. Crystal Growth (印刷中)
  • Peer Reviewed
• [Journal Article] Formation of aligned CrN nanoclusters in Cr-delta-doped GaN (2009)
  • Author(s): Y. K. Zhou, S. Kimura, S. Emura, S. Hasegawa and H. Asahi
  • Journal Title: J. Phys. : Condens. Matter 21
  • Peer Reviewed
• [Journal Article] Electronic structure of Gal-xCrxN and Si-doping effects studied by photoemission and X-ray absorption spectroscopy (2008)
  • Author(s): G. S. Song, M. Kobayashi, J. I. Hwang, T. Kataoka, M. Takizawa, A. Fujimori, T. Ohkouchi, Y. Takeda, T. Okane, Y. Saitoh, Yamagami, F.-H. Chang, L. Lee, H-J. Lin, D. J. Huang, C. T. Chen, S. Kimura, M. Funakoshi, S. Hasegawa, and H. Asahi
  • Journal Title: Phys. Rev. B 78
  • Peer Reviewed
• [Journal Article] Growth and characterization of InCrN and(In,Ga,Cr)N (2008)
  • Author(s): S. Kimura, S. Emura, K. Tokuda, Y. Hiromura, S. Hayakawa, Y. K. Zhou, S. Hasegawa, and H. Asahi
  • Journal Title: Phys. Stat. Sol.(c) 5 Pages: 1532-1535
  • Peer Reviewed
• [Journal Article] Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temneratures (2008)
  • Author(s): Y. K. Zhou, S. W. Choi, S. Emura, S. Hasegawa and H. Asahi
  • Journal Title: Appl. Phys. Lett. 92 92
  • Peer Reviewed
• [Journal Article] Low temperature molecular-beam epitaxy growth of cubic GaCrN (2008)
  • Author(s): S. Kimura, S. Emura, Y. Yamauchi, Y. K. Zhou, S. Hasegawa and H. Asahi
  • Journal Title: J. Cryst. Growth 310 Pages: 40-46
  • Peer Reviewed
• [Journal Article] Low temperature molecular-beam epitaxy growth of cubic GaCrN (2008)
  • Author(s): S., Kimura
  • Journal Title: J. Cryst. Growth 310 Pages: 40-46
  • Peer Reviewed
• [Journal Article] Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures (2008)
  • Author(s): Y.K., Zhou
  • Journal Title: Appl. Phys. Lett 92
  • Peer Reviewed
• [Journal Article] Growth and characterization of InCrN and (In,Ga,Cr)N (2008)
  • Author(s): S., Kimura
  • Journal Title: Phys. Stat. Sol. (印刷中)
  • Peer Reviewed
• [Journal Article] High Gd concentration GaGdN grown at low temperatures (2008)
  • Author(s): Y.K., Zhou
  • Journal Title: Journal of Superconductivity and Novel Magnetism (印刷中)
  • Peer Reviewed
• [Journal Article] Molecular-beam epitaxy growth and characterization of ferromagnetic cubic GaCrN on GaAs substrate (2007)
  • Author(s): S., Kobayashi
  • Journal Title: J. Cryst. Growth 308 Pages: 58-62
  • Peer Reviewed
• [Journal Article] Growth and Characterization of Ferromagnetic Cubic GaCrN: Structural and magnetic properties (2007)
  • Author(s): S., Kimura
  • Journal Title: J. Cryst. Growth 301-302 Pages: 651-655
  • Peer Reviewed
• [Journal Article] Cr atom alignment in Cr-delta-doped GaN (2007)
  • Author(s): S., Kimura
  • Journal Title: American Institute of Physics CP 882 Pages: 410-412
• [Presentation] Ferromagnetism and Luminescence of Diluted Magnetic Semiconductors GaGdN and AlGdN (2008)
  • Author(s): S. Emura, M. Takahashi, H. Tambo, T. Nakamura, Y. K Zhou, S. Hasegawa and H. Asahi
  • Organizer: 2008 Matedals Research Society Fall Meeting
  • Place of Presentation: ボストン(米国)(招待講演)
  • Year and Date: 2008-12-02
• [Presentation] Growth and characterization of transition-metal and rare-earth doped III-nitride based magnetic semiconductors for nano-spintronics (2008)
  • Author(s): H. Asahi, S. Hasegawa, S. Emura and Y. K. Zhou
  • Organizer: 4th Handai Nanoscineoe and Nanotechnology International Symposium
  • Place of Presentation: 大阪(招待講演)
  • Year and Date: 2008-10-01
• [Presentation] Crystal growth and characterization of GaCrN nanorods on Si substrate (2008)
  • Author(s): H. Tambo, S. Kimura, Y. Yamauchi, Y. Hiromura, S. Emura, S. Hasegawa and H. Asahi
  • Organizer: The 2nd International Symposium on Growth of III-Nitrides
  • Place of Presentation: 伊豆
  • Year and Date: 2008-10-01
• [Presentation] Magnetic properties of GaGdN studied by SQUID and SX-MCD (2008)
  • Author(s): M. Takahashi, Y. K. Zhou, S. Emura, T. Nakamura, S. Hasegawa, and H Asahi
  • Organizer: 5th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors
  • Place of Presentation: Foz do Iguacu(ブラジル)
  • Year and Date: 2008-08-05
• [Presentation] Annealing effect in GaDyN on optical and magnetic properties (2008)
  • Author(s): Y. K. Zhou, M. Takahashi, S. Emura, S. Hasegawa, H. Asahi
  • Organizer: 5th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors
  • Place of Presentation: Foz do Iguacu(ブラジル)
  • Year and Date: 2008-08-04
• [Presentation] Structural properties of AlCrN, GaCrN and InCrN (2008)
  • Author(s): S. Kimura, K. Tokuda, Y. K. Zhou, S. Emura, S. Hasegawa, and H. Asahi
  • Organizer: 15th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: バンクーバー(カナダ)
  • Year and Date: 2008-08-04
• [Presentation] Third magnetic phase of GaGdN detected by SX-MCD (2008)
  • Author(s): M. Takahashi, Y. Hiromura, S. Emura, T. Nakamura Y. K. Zhou, S. Hasegawa, and H Asahi
  • Organizer: 29th International Conference on Physics of Semiconductors
  • Place of Presentation: リオデジャネイロ(ブラジル)
  • Year and Date: 2008-07-30
• [Presentation] Orbital ordering on dilute Cr3+ions doped in GaN (2008)
  • Author(s): S. Emura, S. Kimura, K. Tokuda, Yi-Kai Zhou, S. Hasegawa and H. Asahi
  • Organizer: 29th International Conference on Physics of Semiconductors
  • Place of Presentation: リオデジャネイロ(ブラジル)
  • Year and Date: 2008-07-29
• [Presentation] Formation of aligned CrN nano-clusters in Cr-delta-doped GaN (2008)
  • Author(s): Y. K. Zhou, S. Kimura, S. Emura, S. Hasegawa and H. Asahi
  • Organizer: International Conference on Quantum Simulators and Design 2008
  • Place of Presentation: 東京
  • Year and Date: 2008-06-01
• [Presentation] GdをドープしたGaNナノロッドの成長と局所構造評価 (2008)
  • Author(s): 亀岡恒志
  • Organizer: 第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-30
• [Presentation] Si基板上GaCrNナノロッドの作製とその評価(2) (2008)
  • Author(s): 丹保浩行
  • Organizer: 第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-30
• [Presentation] 四元混晶(Al,Ga,Cr)Nの結晶成長とその局所構造評価 (2008)
  • Author(s): 徳田克彦
  • Organizer: 第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-29
• [Presentation] GaGdN薄膜のSX-MCDによる磁性評価 (2008)
  • Author(s): 高橋政寛
  • Organizer: 第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-28
• [Presentation] GaDyNの結晶成長及びその物性 (2008)
  • Author(s): 周逸凱
  • Organizer: 第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-28
• [Presentation] 四元混晶(In,Ga,Cr)Nの結晶成長とその物性 (2007)
  • Author(s): 木村重哉
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-06
• [Presentation] 低温成長アンドープGaGdN及びSiドープGaGdNの諸特性 (2007)
  • Author(s): 周逸凱
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-06
• [Presentation] MBE Growth and Characterization of Rare-Earth Doped Nitride Semiconductors for Spintronics (2007)
  • Author(s): H, Asahi
  • Organizer: E-MRS-2007
  • Place of Presentation: フランス・ストラスブール
• [Presentation] Enhancement of magnetic moment in GaGdN/GaN superlattice structure (2007)
  • Author(s): Y, K, Zhou
  • Organizer: ChinaNANO 2007
  • Place of Presentation: 中国・北京
• [Presentation] High Gd concentration GaGdN grown at low temperature (2007)
  • Author(s): Y, K, Zhou
  • Organizer: Spin Tech-IV
  • Place of Presentation: 米国・ハワイ
• [Presentation] Enhancement of magnetic moment in GaGdN/GaN superlattice structure (2007)
  • Author(s): Y, K, Zhou
  • Organizer: Material Today Asia
  • Place of Presentation: 中国・北京
• [Presentation] Growth and characterization of InCrN and (In,Ga,Cr)N diluted magnetic semiconductors (2007)
  • Author(s): S, Kimura,
  • Organizer: 7th International Conference on Nitride Semiconductors
  • Place of Presentation: 米国・ラスべがス
• [Book] 薄膜ハンドブック(分担執筆) (2008)
  • Author(s): 朝日一
  • Total Pages: 5
  • Publisher: オーム社
• [Remarks]
  • URL: http://www.sanken.osaka-u.ac.jp/labs/pem/
• [Remarks]
  • URL: http://www.sanken.osaka-u.ac.jp/labs/pem/