| Budget Amount *help |
¥102,180,000 (Direct Cost: ¥78,600,000、Indirect Cost: ¥23,580,000)
Fiscal Year 2010: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
Fiscal Year 2009: ¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
Fiscal Year 2008: ¥29,510,000 (Direct Cost: ¥22,700,000、Indirect Cost: ¥6,810,000)
Fiscal Year 2007: ¥41,600,000 (Direct Cost: ¥32,000,000、Indirect Cost: ¥9,600,000)
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| Research Abstract |
Metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated on diamond exhibiting high current, high frequency and high temperature performance. The maximum drain current density is above 1 A/mm and the highest transconductance is 400 mS/mm. These values are comparable to those of modern FETs made of Si or III-V semiconductors. Regarding RF performance, the highest cutoff frequency reaches nearly 50 GHz. The power handling capability exceeds those of Si and GaAs at 1 GHz. The operation temperature of diamond MOSFETs increased to be 400℃ indicating the stable operation of diamond transistor. Josephson junction devices composed of superconducting diamonds show the junction characteristic frequency in THz region.
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