| Budget Amount *help |
¥108,810,000 (Direct Cost: ¥83,700,000、Indirect Cost: ¥25,110,000)
Fiscal Year 2011: ¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2010: ¥20,540,000 (Direct Cost: ¥15,800,000、Indirect Cost: ¥4,740,000)
Fiscal Year 2009: ¥21,580,000 (Direct Cost: ¥16,600,000、Indirect Cost: ¥4,980,000)
Fiscal Year 2008: ¥23,790,000 (Direct Cost: ¥18,300,000、Indirect Cost: ¥5,490,000)
Fiscal Year 2007: ¥24,570,000 (Direct Cost: ¥18,900,000、Indirect Cost: ¥5,670,000)
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| Research Abstract |
Integrating GaN light source devices with Si three-dimensional structures and micro actuators monolithically, functional micro-electro-mechanical systems (MEMS)for optical applications were developed. Crystal growth of GaN-LED on Si substrate, GaN crystal growth on micro-machined GaN/Si substrate, integration of GaN-LED with Si actuator, and fabrication of GaN actuator were carried out. Integrating GaN-LED with Si-MEMS, a variable lightning device, a micro fluorescent analysis chip etc. were demonstrated.
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