Development of large-area X-ray imaging detectors with energy discrimination capability for medical use.
| Project/Area Number |
19200044
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Medical systems
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
YASUDA Kazuhito Nagoya Institute of Technology, 大学院・工学研究科, 教授 (60182333)
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| Co-Investigator(Kenkyū-buntansha) |
NIRAULA Madan 名古屋工業大学, 大学院・工学研究科, 准教授 (20345945)
富田 康弘 浜松ホトニクス(株), 電子管事業部, 専任部員 (50394169)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥35,620,000 (Direct Cost: ¥27,400,000、Indirect Cost: ¥8,220,000)
Fiscal Year 2009: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2008: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2007: ¥27,430,000 (Direct Cost: ¥21,100,000、Indirect Cost: ¥6,330,000)
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| Keywords | 放射線検出器 / カドミウムテルル / ヘテロ接合ダイオード / 有機金属気相成長法 / エネルギー弁別機能 / 放射線画画像検出器 / テルル化カドミウム / 成長前処理 / 検出器アレイ / 厚膜層成長 / ヨウ素ドーピング / 自己補償機構 |
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| Research Abstract |
Large scale X-ray imaging detector arrays with energy discrimination capabilities have been studied using single crystal thick CdTe layers grown on Si substrate by metalorganic vapor phase epitaxy. Structure of the detector was high-resistive thick p-CdTe/n-buffer CdTe/n^+-Si substrates. Growth and iodine doping conditions for p-CdTe and n-CdTe layers were established. Pretreatment of Si substrates for high quality CdTe growth was also established.
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Report
(4 results)
Research Products
(52 results)
