| Project/Area Number |
19201019
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanostructural science
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
HANEDA Hajime National Institute for Materials Science, センサ材料センター, センター長 (70354420)
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| Co-Investigator(Kenkyū-buntansha) |
OHASHI Naoki 独立行政法人物質・材料研究機構, 光材料センター, センター長 (60251617)
WADA Yoshiki 独立行政法人物質・材料研究機構, 光材料センター, 主幹研究員 (90343847)
SAKAGUCHI Isao 独立行政法人物質・材料研究機構, 光材料センター, 主幹研究員 (20343866)
YUSA Hitoshi 独立行政法人物質・材料研究機構, ナノスケール物質萌芽ラボ, 主幹研究員 (10343865)
ADACHI Yutaka 独立行政法人物質・材料研究機構, 光材料センター, 主任研究員 (30354418)
HISHITA Shunichi 独立行政法人物質・材料研究機構, センサ材料センター, 主席研究員 (40354419)
SAITO Noriko 独立行政法人物質・材料研究機構, センサ材料センター, 主任研究員 (20354417)
OHGAKI Takeshi 独立行政法人物質・材料研究機構, センサ材料センター, 研究員 (80408731)
ISHIOKA Kunie 独立行政法人物質・材料研究機構, ナノ計測センター, 主幹研究員 (30343883)
KITAJIMA Masahiro 防衛大学校, 大学院・理工学研究科, 教授 (00343830)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥48,100,000 (Direct Cost: ¥37,000,000、Indirect Cost: ¥11,100,000)
Fiscal Year 2009: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
Fiscal Year 2008: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
Fiscal Year 2007: ¥33,020,000 (Direct Cost: ¥25,400,000、Indirect Cost: ¥7,620,000)
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| Keywords | 同位体 / フォノン / 酸化物半導体 / 窒化物半導体 / 人工超格子 / 拡散 / SIMS |
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| Research Abstract |
The isotope-modulated superlattice structures of zinc oxide (ZnO), gallium nitride (GaN) and aluminum nitride (AlN), that are wide bandgap semiconductors, were synthesized successfully. The isotope with same electronic state and different mass number were intentionally distributed in these thin films. The changes of lattice vibrations, crystallographic properties and optical properties of these thin films were investigated. Furthermore, precisely measurements of the mass difference of isotope using a secondary ion mass spectrometry (SIMS) were carried out to calculate the diffusion coefficients exactly. Based on these experimental results, the lattice defect structure of thin films and the growth mechanism of particles were clarified successfully.
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