| Project/Area Number |
19201026
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
|
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| Research Institution | Nagoya University |
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Principal Investigator |
SATO Kazuo Nagoya University, 工学研究科, 教授 (30262851)
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| Co-Investigator(Kenkyū-buntansha) |
SHIKIDA Mitsuhiro 名古屋大学, 大学院・工学研究科, 准教授 (80273291)
PREM Pal 名古屋大学, 大学院・工学研究科, COE研究員(当時) (20444416)
KIMURA Yasuo 東北大学, 電気通信研究所, 助教 (40312673)
GOSALVEZ Miguel 名古屋大学, 大学院・工学研究科, COE研究員 (10377814)
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| Co-Investigator(Renkei-kenkyūsha) |
GOSALVEZ Miguel ヘルシンキ工科大学, 研究員
HYNNINEN Teemu ヘルシンキ工科大学, 研究員
FERRANDO Nestor バレンシア工科大学, 研究助手
|
|---|
| Project Period (FY) |
2007 – 2009
|
| Project Status |
Completed (Fiscal Year 2009)
|
| Budget Amount *help |
¥44,200,000 (Direct Cost: ¥34,000,000、Indirect Cost: ¥10,200,000)
Fiscal Year 2009: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2008: ¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2007: ¥21,450,000 (Direct Cost: ¥16,500,000、Indirect Cost: ¥4,950,000)
|
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| Keywords | シリコン / 結晶 / 異方性エッチング / 不純物イオン / 界面活性剤 / 固液界面 / FTIR |
|---|
| Research Abstract |
We investigated wet anisotropic etching of single crystal silicon using alkaline solutions. We clarified the mechanisms of easily changeable anisotropy in the etch rate by a small change in the etching solution contents. It was clarified both theoretically and experimentally that a cupper ion as an impurity in etching solution significantly suppresses etch rate and deteriorates etched surface roughness. Also, we clarified a mechanism of dramatic anisotropy change occurring by a small amount of surfactant added to etching solution. This was first found by our in-situ FTIR observation of liquid-solid interface between etching solution and silicon. By utilizing the variable anisotropy in etch rate, we invented new fabrication processes for 3D microstructures for MEMS applications with a minimal process cost.
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