Control of deep ultraviolet light emission properties of hexagonal boron nitride crystals

• Project/Area Number: 19205026
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Functional materials/Devices
• Research Institution: National Institute for Materials Science
• Principal Investigator: TANIGUCHI Takashi National Institute for Materials Science, ナノスケール物質萌芽ラボ, グループリーダー (80354413)
• Co-Investigator(Kenkyū-buntansha): WATANBE Kenji 独立行政法人物質・材料研究機構, 光材料センター, 主幹研究員 (20343840) ; KOIZUMI Satoshi 独立行政法人物質・材料研究機構, センサ材料センター, 主幹研究員 (90215153) ; KOBAYASHI Kazuaki 独立行政法人物質・材料研究機構, 計算科学センター, 主幹研究員 (00354150) ; OBA Fumiyasu 京都大学, 工学研究科, 准教授 (90378795) ; YAMADA Takatoshi 独立行政法人産業技術総合研究所, ナノチューブ応用研究センター, 研究員 (30306500) ; 津田 統 独立行政法人物質・材料研究機構, 光材料センター, NIMS特別研究員 (10242041)
• Project Period (FY): 2007 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥49,790,000 (Direct Cost: ¥38,300,000、Indirect Cost: ¥11,490,000); Fiscal Year 2010: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000); Fiscal Year 2009: ¥11,960,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥2,760,000); Fiscal Year 2008: ¥12,480,000 (Direct Cost: ¥9,600,000、Indirect Cost: ¥2,880,000); Fiscal Year 2007: ¥15,730,000 (Direct Cost: ¥12,100,000、Indirect Cost: ¥3,630,000)
• Keywords: 遠紫外線発光 / 六方晶窒化ホウ素 / 自由励起子発光 / 高圧結晶合成 / 深紫外線発光 / 金属フラックス結晶成長 / 電子線励起型紫外線発光デバイス / 紫外線殺菌 / グラフェンデバイス用基板

Research Abstract

The purpose of this study is to realize the potential of hexagonal boron nitride(hBN) crystal as a deep ultraviolet light emission materials. High purity single crystals of hBN were obtained under high pressure flux growth process and their optical properties were characterized. Synthesis technique of high purity hBN under atmospheric pressure was also established by using Ni base solvent system. The plot-type of deep ultraviolet emission device combined with hBN crystals and electron emitter were fabricated and its usefulness for sterilization of bacteria was realized.

Research Products

• [Journal Article] Giant Nonlocality Near the Dirac Point in Graphene (2011)
  • Author(s): D.A.Abanin, S.V.Morozov, L.A.Ponomarenko, R.V.Gorbachev, A.S.Mayorov, M.I.Katsnelson, K.Watanabe, T.Taniguchi, K.S.Novoselov, L.S. Levitov, A.K.Geim
  • Journal Title: Science 15 Pages: 328-328
  • Peer Reviewed
• [Journal Article] Giant Nonlocality Near the Dirac Point in Graphene (2011)
  • Author(s): D.A.Abanin, S.V.Morozov, L.A.Ponomarenko, R.V.Gorbachev, A.S.Mayorov, M.I.Katsnelson, K.Watanabe, T.Taniguchi, K.S.Novoselov, L.S.Levitov, A.K.Geim
  • Journal Title: Science Volume: 15 Pages: 328-330
  • Peer Reviewed
• [Journal Article] Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride (2011)
  • Author(s): J.Xue, J.Yamagishi, D.Bulmash, P.Jacquod, A.Deshpande, K.Watanabe, T.Taniguchi, P.J-Herrero, B.LeRoy
  • Journal Title: Nature Mater Volume: 10 Pages: 282-285
  • Peer Reviewed
• [Journal Article] Hunting for Monolayer Boron Nitride : Optical and Raman Signatures (2011)
  • Author(s): R.V.Gorbachev, I.Riaz, R.R.Nair, R.Jalil, L.Britnell, B.D.Belle, E.W.Hill, K.S.Novoselov, K.Watanabe, T.Taniguchi, A.K.Geim, P.Blake
  • Journal Title: small, 7,465 Volume: 7 Pages: 465-468
  • Peer Reviewed
• [Journal Article] Boron nitride substrates for high-quality graphene electronics (2011)
  • Author(s): C.R.Dean, A.F.Young, I.Meric, C.Lee, W.Lei, S.Sorgenfrei, K.Watanabe, T.Taniguchi, P.Kim, K.L.Shepard, J.Hone
  • Journal Title: Nature Nanotechnology Volume: 5 Pages: 722-726
  • Peer Reviewed
• [Journal Article] Synthesis of high-crystallinity cubic-GaN nanoparticles using the Na fluxmethod-A proposed new usage for a belt-type high pressure apparatus (2011)
  • Author(s): F.Kawamura, K.Watanabe, T.Takeda, T.Taniguchi
  • Journal Title: J.Crystals Growth Volume: 321 Pages: 100-105
  • Peer Reviewed
• [Journal Article] Elasticity of cubic boron nitride under ambient conditions (2011)
  • Author(s): J.S.Zhand, J.D.Bass, T.Taniguchi, A.F.Gobcharov, Y-Y Chand, S.D.Jacobsen
  • Journal Title: J.Appl.Phys Volume: 109
  • Peer Reviewed
• [Journal Article] Field electron emission properties of n-type (111)-oriented single crystal cubic boron nitride (2011)
  • Author(s): T.Yamada, C.E.Nebel, T.Taniguchi
  • Journal Title: J.Vac.Sci.Technol.B Volume: 29
  • Peer Reviewed
• [Journal Article] Boron nitride substrates for high-quality graphene electronics (2010)
  • Author(s): C.R. Dean, A.F.Young, I.Meric, C.Lee, W.Lei, S.Sorgenfrei, K Watanabe, T.Taniguchi, P.Kim, K.L.Shepard, J.Hone
  • Journal Title: Nature Nanotechnology 5 Pages: 722-726
  • Peer Reviewed
• [Journal Article] Doping of hexagonal boron nitride via intercalation : A theoretical prediction (2010)
  • Author(s): F.Oba, A.Togo, I.Taknaka, K.Watanabe T.Taniguchi
  • Journal Title: Phys.Rev.B 81
  • NAID: 120002462971
  • Peer Reviewed
• [Journal Article] Crystallization of hexagonal boron nitride exhibiting excitonic luminescence in the deep ultraviolet region at room temperature via thermal chemical vapor phase deposition (2010)
  • Author(s): O.Tsuda, K.Watanabe, T.Taniguchi
  • Journal Title: Diamond & Related Materials 19 Pages: 83-90
  • Peer Reviewed
• [Journal Article] The Isothermal Equation of State of CaPtO_3 Post-perovskite to 40 GPa" (2010)
  • Author(s): A.Lindsay-Scott, I.G.Wood, D.P.Dobson, L.Vocadlo, J.P.Brodholt, W.Crichton, M.Hanfland, T.Taniguchi
  • Journal Title: Physics of the Earth and Planetary Interiors Volume: 19 Pages: 8150-8156
  • Peer Reviewed
• [Journal Article] Resonant field emission from two-dimensional density of state on hydrogen-terminated intrinsic diamond (2010)
  • Author(s): T.Yamada, S.Shikata, C.E.Nebel
  • Journal Title: Journal of Applied Physics 107 Pages: 13705-13705
  • Peer Reviewed
• [Journal Article] Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal (2009)
  • Author(s): K.Watanabe, T.Taniguchi
  • Journal Title: Phys.Rev.B 79
  • Peer Reviewed
• [Journal Article] Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride (2009)
  • Author(s): K.Watanabe, T.Taniguchi, T.Niiyama, K.Miya, M.Taniguchi
  • Journal Title: Nat.Photonics 3 Pages: 591-594
  • Peer Reviewed
• [Journal Article] Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal (2009)
  • Author(s): K. Watanabe, T. Taniguchi
  • Journal Title: Phys.Rev.B 79
  • Peer Reviewed
• [Journal Article] Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride (2009)
  • Author(s): K. Watanabe, T. Taniguchi, T. Niiyama, K. Miya, M. Taniguchi
  • Journal Title: Nat.Photonics 3 Pages: 591-594
  • Peer Reviewed
• [Journal Article] Synthesis of cubic boron nitride crystals using Ni-Cr and Ni-Cr-Al solvents under High Pressure (2009)
  • Author(s): Y.Kubota, T.Taniguchi
  • Journal Title: Jpn.J.Appl.Phys 48 Pages: 71004-71007
  • NAID: 40016664142
  • Peer Reviewed
• [Journal Article] Far ultraviolet plane-emission handheld device based on hexagonal boron nitride (2009)
  • Author(s): K.Watanabe, T.Taniguchi, A.Niiyama, K.Miya, M.Taniguchi
  • Journal Title: Nature Photonics 3 Pages: 591-594
  • Peer Reviewed
• [Journal Article] Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal (2009)
  • Author(s): K.Watanabe, T.Taniguchi
  • Journal Title: Phys.Rev.B 19 Pages: 193104-193106
  • Peer Reviewed
• [Journal Article] Field emission properties of nano-structured phosphorus-doped diamond (2009)
  • Author(s): T.Yamada, C.E.Nebel, S.Shikata
  • Journal Title: Applied Surface Science 256 Pages: 1006-1009
  • Peer Reviewed
• [Journal Article] Structure of chemically derived mono- and few-atomic-layer boron nitride sheets (2008)
  • Author(s): Wei-Qiang Han, L.Wu, Y.Zhu, K.Watanabe T.Taniguchi
  • Journal Title: Appl.Phys.Lett. 93 Pages: 223103-223103
  • Peer Reviewed
• [Journal Article] Hexagonal Boron Nitride Single Crystal Growth at Atmospheric Pressure Using Ni-Cr Solvent (2008)
  • Author(s): Kubota, K.Watanabe, O.Tsuda, T.Taniguchi
  • Journal Title: Chem.Mater. 20 Pages: 1661-1661
  • Peer Reviewed
• [Journal Article] Hexagonal Boron Nitride Single Crystal Growth at Atmospheric Pressure Using Ni-Cr Solvent (2008)
  • Author(s): Y. Kubota, K. Watanabe, O. Tsuda, T. Taniguchi
  • Journal Title: CHEMISTRY OF MATERIALS 20 Pages: 1661-1663
  • Peer Reviewed
• [Journal Article] Structure of chemically derived mono- and few-atomic-layer boron nitride sheets (2008)
  • Author(s): W. Han, L. Wu, Y. Zhu, K. Watanabe, T. Taniguchi
  • Journal Title: APPLIED PHYSICS LETTERS 93
  • Peer Reviewed
• [Journal Article] Synthesis of Cubic Boron Nitride Using Ni-Mo Alloy as a Solvent (2008)
  • Author(s): Y. Kubota, T. Taniguchi
  • Journal Title: JAPANESE JOURNAL OF APPLIED PHYSICS 47 Pages: 8375-8378
  • NAID: 40016346949
  • Peer Reviewed
• [Journal Article] Characterization of p-n junctions in wide-gap semiconductors using a cathodoluminescence/electron-beam-induced current technique (2008)
  • Author(s): T. Sekiguchi, X. L. Yuan, S. Koizumi, T. Taniguchi
  • Journal Title: Beam Injection Based Nanocharacterization of Advanced Materials Pages: 139-152
• [Journal Article] Time-resolved photoluminescence in band-edge region of hexagonal boron nitride single crystals (2008)
  • Author(s): K. Watanabe, T. Taniguchi, T. Kuroda O. Tsuda, H. Kanda
  • Journal Title: Diamond and Related Materials 17 Pages: 830-832
  • Peer Reviewed
• [Journal Article] First-principles approach to chemical diffusion of lithium atoms in a graphite intercalation compound (2008)
  • Author(s): K. Toyoura, Y. Koyama, A. Kuwabara, F. Oba, I. Tanaka
  • Journal Title: Phys. Rev. B 78
  • Peer Reviewed
• [Journal Article] Electron emission mechanism of hydrogenated natural type IIb diamond (111) (2008)
  • Author(s): H. Yamaguchi, I. Saiso, Y. Kudo, T. Masuzawa, T. Yamada, M. Kudo, Y. Takakywa, K. Okano
  • Journal Title: Diamond and Related Materals 17 Pages: 162-166
  • Peer Reviewed
• [Journal Article] Combined X-ray photoelectron spectroscopy/ultraviolet photoelectron spectroscopy/field emission spectroscopy for characterization of electron-emission mechanism of diamond (2008)
  • Author(s): H. Yamaguchi, Y. Kudo, M. Kudo, T. Yamada, Y. Takakywa, K. Okano
  • Journal Title: Journal of Vacuum Science and Technology B 26 Pages: 737-737
  • Peer Reviewed
• [Journal Article] Field emission from modified P-doped diamond surface with different barrier height (2008)
  • Author(s): Y. Kudo, T. Yamada, H. Yamaguchi, T. Masuzawa, I. Saito, S. Shikata C. E. Nebel, K. Okano
  • Journal Title: Japanese Journal of Applied Physics 47 Pages: 9821-8924
  • NAID: 40016389635
  • Peer Reviewed
• [Journal Article] リン添加ダイヤモンドナノチップアレーからの電界電子放出特性 (2008)
  • Author(s): 山田貴壽, Christoph E. Nebel, 鹿田真一
  • Journal Title: 信学技法 ED2008-11 Pages: 11-14
  • NAID: 110007006036
• [Journal Article] Hexagonal Boroll Nitride Single Crystal Growth at Atmospheric (2008)
  • Author(s): Y. Kubota, K. Watanabe, O. Tsuda, T. Taniguchi
  • Journal Title: Chemistry of Materials 20 Pages: 1661-1663
  • Peer Reviewed
• [Journal Article] First-principles-based phase diagram of the cubic BNC ternary system (2008)
  • Author(s): K. Yuge, A. Seko, Y. Koyama, F. Oba, L. Tanaka
  • Journal Title: Phys.Rev.B 77
  • Peer Reviewed
• [Journal Article] Time-resolved photoluminescence in band-edge region of hexagonal boron nitride (2008)
  • Author(s): 渡辺 賢司、黒田 隆、谷口 尚、津田 統、神田 久生
  • Journal Title: Diamond and Related Materials (In press)(Available on line)
  • Peer Reviewed
• [Journal Article] Deep Ultraviolet Light?Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure (2007)
  • Author(s): Y..Kubota, K.Watanabe, O.Tsuda, T.Taniguchi
  • Journal Title: Science 317 Pages: 932-934
  • Peer Reviewed
• [Journal Article] Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure (2007)
  • Author(s): Kubota, K. Watanabe, O. Tsuda, T. Taniguchi
  • Journal Title: Science 317 Pages: 932-934
  • Peer Reviewed
• [Journal Article] Synthesis of high purity boron nitride single crystals under high pressure by using Ba-BN solvent (2007)
  • Author(s): T. Taniguchi&K. Watanabe
  • Journal Title: J.Cryst.Growth 303 Pages: 525-529
  • Peer Reviewed
• [Journal Article] Photoluminescence Investigation of Cubic Boron Nitride Doped with Beryllium (2007)
  • Author(s): E. M. Shishonok, Takashi Taniguchi, Takashi Sekiguchi
  • Journal Title: Physics of the Solid State 49 Pages: 1797-1803
  • Peer Reviewed
• [Journal Article] Development of Radiation detector made of a cubic boron nitride polycrystal (2007)
  • Author(s): J. H. Kaneko, T. Taniguchi, S. Kawamura, K. Satou, F. Fujita, A. Homma M. Furusak
  • Journal Title: Nuclear Instruments&Methods in Physics Section Accelerators Spectrometers Detectors and Associate Equipment 576 Pages: 417-421
  • Peer Reviewed
• [Journal Article] First-Principles Study of Various Hexagonal BN Phases (2007)
  • Author(s): K. Kobayashi, K. Watanabe, T. Taniguchi
  • Journal Title: J.Phys.Soc.Japan 76
  • NAID: 110006448321
  • Peer Reviewed
• [Journal Article] Effect of Al on the Formation of Cubic Boron Nitride Using Ni3Al Solventunder High Pressure (2007)
  • Author(s): Y. Kubota, K. Kosuda, T. Taniguchi
  • Journal Title: Jpn.J.Appl Phys Pages: 7388-7391
  • Peer Reviewed
• [Journal Article] Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure (2007)
  • Author(s): Y. Kubota, K. Watanabe, O. Tsuda, T. Taniguchi
  • Journal Title: Science 317 Pages: 932-934
  • Peer Reviewed
• [Journal Article] 熱CVD法による深紫外発光性六方晶窒化ホウ素の合成 (2007)
  • Author(s): 津田 統、渡辺 賢司、谷口 尚
  • Journal Title: 表面技術 58 Pages: 819-822
  • NAID: 10019979511
  • Peer Reviewed
• [Journal Article] 高純度六方晶窒化ホウ素粉末のバンド端発光特性 (2007)
  • Author(s): 渡辺 賢司、黒田 隆、谷口 尚、津田 統、神田 久生
  • Journal Title: NEW DIAMOND 23 Pages: 24-25
  • Peer Reviewed
• [Journal Article] 超高圧を用いた物質合成:窒化ホウ素単結晶、焼結体の合成 (2007)
  • Author(s): 谷口 尚
  • Journal Title: Fine Ceramics Report 25 Pages: 126-130
  • Peer Reviewed
• [Journal Article] Combined x-ray photoelectron spectroscopy/ultraviolet photoelectron spectroscopy/fledemission spectroscopy for characterization of electron-emission mechanism of diamond
  • Author(s): H. Yamaguchi, Y. Kudo, T. Masuzawa, M. Kudo, T. Yamada, Y. Takakuwa, K. Okano
  • Journal Title: J.Vac.Sci.Technol.B in press
  • Peer Reviewed
• [Presentation] n型立方晶窒化ホウ素単結晶からの電界電子放出特性 (2011)
  • Author(s): 山田貴壽, 長谷川雅考, 増澤智昭, 工藤唯義, 岡野健, 谷口尚
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 震災のため講演会中止(予稿集)
  • Year and Date: 2011-03-26
• [Presentation] Hexagonal boron nitride as a new ultraviolet luminescent material and its application (2010)
  • Author(s): K.Watanabe
  • Organizer: 2010 MRS Fall Meeting
  • Place of Presentation: Boston(米国)
  • Year and Date: 2010-11-30
• [Presentation] 負の電子親和力を有するn型半導体ダイヤモンドからの電界電子放出 (2010)
  • Author(s): 山田貴壽、長谷川雅考、C.E.Nebel、工藤唯義、山口尚登, 増沢智昭、岡野健
  • Organizer: 電子情報通信学会 電子デバイス研究会
  • Place of Presentation: 京都大学(京都府)
  • Year and Date: 2010-10-25
• [Presentation] 高純度・超微粒立方晶窒化ホウ素焼結体の高圧合成 (2010)
  • Author(s): 谷口尚
  • Organizer: 第51回高圧討論会
  • Place of Presentation: 仙台戦災復興会館(宮城県)
  • Year and Date: 2010-10-20
• [Presentation] Hexagonal boron nitride as a new ultraviolet luminescent material and its application (2010)
  • Author(s): K.Watanabe
  • Organizer: Diamond 2010
  • Place of Presentation: Budapest(ハンガリー)
  • Year and Date: 2010-09-08
• [Presentation] High-purity boron nitride single crystals and sintered bodies (2010)
  • Author(s): 谷口尚
  • Organizer: CIMTEC 2010
  • Place of Presentation: Palazzo deiCongressi, Montecatini Terme Italy
  • Year and Date: 2010-09-07
• [Presentation] High-purity boron nitrides single crystals and sintered bodies (2010)
  • Author(s): 谷口尚
  • Organizer: CIMTEC 2010
  • Place of Presentation: Palazzo dei Congressi, Montecatini Terme (PT)-(イタリア)
  • Year and Date: 2010-09-07
• [Presentation] Field electron emission properties of n-type single crystal cubic boron nitride (2010)
  • Author(s): T.Yamada, C.E.Nebel, T.Taniguchi
  • Organizer: International Vacuum Nanoelectronics Conference 2010
  • Place of Presentation: Stanford(英国)
  • Year and Date: 2010-07-26
• [Presentation] 金属系溶媒を用いた窒素一気圧下でのhBN結晶成長 (2010)
  • Author(s): 谷口尚、渡邊賢司
  • Organizer: 第29回電子材料シンポ
  • Place of Presentation: ラフォーレ修善寺,伊豆市
  • Year and Date: 2010-07-15
• [Presentation] 金属系溶媒を用いた窒素-気圧下でのhBN結晶成長 (2010)
  • Author(s): 谷口尚、渡邊賢司
  • Organizer: 第29回電子材料シンポジウム
  • Place of Presentation: ラフォーレ修善寺(静岡県)
  • Year and Date: 2010-07-15
• [Presentation] 六方晶窒化ホウ素のバンド端光学特性 (2010)
  • Author(s): 渡邊賢司
  • Organizer: 第29回電子材料シンポジウム
  • Place of Presentation: ラフォーレ修善寺(鞭岡県)
  • Year and Date: 2010-07-15
• [Presentation] Hexagonal Boron Nitride as a new Ultraviolet Luminescent Material and its Device Application (2010)
  • Author(s): K.Watanabe
  • Organizer: Progress in Electromagnetics Research Symposium
  • Place of Presentation: Cambridge(米国)
  • Year and Date: 2010-07-06
• [Presentation] Synthesis of ultra-fine-grained cubic boron nitride sintered bodies without any additive under high pressure and their properties (2010)
  • Author(s): 谷口尚
  • Organizer: STAC-4
  • Place of Presentation: メルパルク横浜(神奈川県)
  • Year and Date: 2010-06-22
• [Presentation] Far UV emitter based on hexagonal boron nitride (2010)
  • Author(s): K.Watanabe
  • Organizer: The international Conference on Nanophotonics 2010
  • Place of Presentation: エポカルつくば(茨城県)
  • Year and Date: 2010-05-31
• [Presentation] 新遠紫外発光材料六方晶窒化ホウ素のデバイス応用 (2010)
  • Author(s): 渡邊賢司
  • Organizer: 日本学術振興会真空ナノエレクトロニクス第158委員会 第82研究会
  • Place of Presentation: 筑波大学東京キャンパス(東京都)
  • Year and Date: 2010-04-19
• [Presentation] Doping of hexagonal boron nitride via intercalation : A first-principlesstudy (2009)
  • Author(s): F. Oba, A. Togo, I. Tanaka, K.Watanabe, T.Taniguchi
  • Organizer: 2009 MRS fall meeting
  • Place of Presentation: Boston, USA
  • Year and Date: 2009-11-30
• [Presentation] Doping of hexagonal boron nitride via intercalation : A first-principles study (2009)
  • Author(s): F.Oba, A.Togo, I.Tanaka, K.Watanabe, T.Taniguchi
  • Organizer: 2009 MRS fall meeting
  • Place of Presentation: John B.Hynes Convention Center, Boston USA
  • Year and Date: 2009-11-30
• [Presentation] 高純度窒化ホウ素単結晶の高圧・常圧合成 (2009)
  • Author(s): 谷口尚
  • Organizer: 第22回 秋季シンポジウム,日本セラミックス協会
  • Place of Presentation: 愛媛大学(愛媛県)
  • Year and Date: 2009-09-16
• [Presentation] High Pressure Synthesis of Functionalized Boron Nitride by Doping under high pressure with temperature gradient method (2009)
  • Author(s): 谷口尚
  • Organizer: 47th EHPRG International Conference
  • Place of Presentation: パリ大学(フランス)
  • Year and Date: 2009-09-10
• [Presentation] Growth of cubic boron nitride crystals by using metal solvents under high pressure with temperature gradient method (2009)
  • Author(s): 谷口尚
  • Organizer: Joint AIRAPT-22 & HPCJ-50
  • Place of Presentation: 東京国際交流館(東京都)
  • Year and Date: 2009-07-27
• [Presentation] 高圧合成プロセスにおける機能元素制御による新機能材料の創製 (2009)
  • Author(s): 谷口尚
  • Organizer: 日本金属学会セミナー「機能元素のナノ材料科学」
  • Place of Presentation: 京都大学(京都市)
  • Year and Date: 2009-07-24
• [Presentation] 六方晶窒化ホウ素を発光層に用いた電子線励起遠紫外発光デバイス (2009)
  • Author(s): 渡邊賢司, 谷口尚, 新山剛宏, 宮健太, 谷口昌照
  • Organizer: 2009年(平成21年)春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学,つくば市
  • Year and Date: 2009-03-31
• [Presentation] Carrier doping in Hexagonal Boron Nitride via Intercalation : A First-Principles Study / Carrier doping in Hexagonal Boron Nitride via Intercalation : A First-Principles Study (2009)
  • Author(s): 大場史康, 東後篤, 田中功, 谷口尚, 渡辺賢司
  • Organizer: 日本金属学会2009年春期(第144回)大会
  • Place of Presentation: 東京工業大学 大岡山キャンパス,東京都
  • Year and Date: 2009-03-29
• [Presentation] Field emission characteristics of 2D hole accumulation layer on H-terminated CVD diamond (2009)
  • Author(s): T.Yamada, S.Shikata, C.E.Nebel
  • Organizer: International Vacuum Nanoelectronics Conference
  • Place of Presentation: ACT CITY Congress Center(浜松市)
• [Presentation] Ni系金属溶媒を用いた高圧下温度差法による立方晶窒化ホウ素単結晶成長 (2008)
  • Author(s): 谷口尚
  • Organizer: 第49回高圧討論会
  • Place of Presentation: 姫路市商工会議所,兵庫県
  • Year and Date: 2008-11-12
• [Presentation] 10-12GPa領域における立方晶窒化ホウ素焼結体の合成と特性評価 (2008)
  • Author(s): 谷口尚
  • Organizer: 第49回高圧討論会
  • Place of Presentation: 姫路市商工会議所,兵庫県
  • Year and Date: 2008-11-11
• [Presentation] 低温における六方晶窒化ホウ素の励起子発光スペクトル (2008)
  • Author(s): 渡辺賢司,谷口尚
  • Organizer: 第22回ダイヤモンドシンポジウム
  • Place of Presentation: 早稲田大学、東京
  • Year and Date: 2008-10-21
• [Presentation] 超微粒立方晶窒化ホウ素焼結体の高圧合成とその切削特性評価 (2008)
  • Author(s): 谷口尚, 藤崎和弘, 横田秀夫
  • Organizer: 第22回ダイヤモンドシンポジウム
  • Place of Presentation: 早稲田大学,東京
  • Year and Date: 2008-10-21
• [Presentation] 低温における六方晶窒化ホウ素の励起子発光スペクトル (2008)
  • Author(s): 渡辺賢司, 谷口尚
  • Organizer: 第22回ダイヤモンドシンポジウム
  • Place of Presentation: 早稲田大学大久保キャンパス,東京都新宿区
  • Year and Date: 2008-10-21
• [Presentation] ガスソースを用いた深紫外発光性六方晶窒化ホウ素の合成 (2008)
  • Author(s): 津田統, 渡辺賢司, 谷口尚
  • Organizer: 第22回ダイヤモンドシンポジウム
  • Place of Presentation: 早稲田大学大久保キャンパス,東京
  • Year and Date: 2008-10-21
• [Presentation] 超高圧力下におけるIII族窒化物単結晶・焼結体の合成〜高純度化と不純物添加による機能発現 (2008)
  • Author(s): 谷口尚
  • Organizer: 日本金属学会2008年秋季(第143回)大会
  • Place of Presentation: 熊本大学,熊本
  • Year and Date: 2008-09-25
• [Presentation] III族窒化物中の希土類機能元素の配位環境と電子状態 (2008)
  • Author(s): 大場史康, 酒井俊文, 林博之田中功, 谷口尚
  • Organizer: 日本金属学会2008年秋期講演大会
  • Place of Presentation: 熊本大学,熊本
  • Year and Date: 2008-09-25
• [Presentation] Synthesis of group III-nitride crystals and their sintered bodies under high pressure by using belt-type apparatus (2008)
  • Author(s): T. Taniguchi
  • Organizer: 4th International Workshop on Spinel-Nitrides and Related Material
  • Place of Presentation: Jagdschloss Niederwald, Ruedesheim, ドイツ
  • Year and Date: 2008-09-04
• [Presentation] ポストアニールを利用した深紫外発光性六方晶窒化ホウ素成長(2) (2008)
  • Author(s): 津田統, 渡辺賢司, 谷口尚
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学,愛知県春日井市
  • Year and Date: 2008-09-04
• [Presentation] Ni-Cr-Mo-Al溶媒を用いたcBN単結晶の高圧合成 (2008)
  • Author(s): 谷口尚, 窪田陽一
  • Organizer: 第27回電子材料シンポジウム
  • Place of Presentation: ラフォーレ修善寺,静岡県,伊豆市
  • Year and Date: 2008-07-09
• [Presentation] Crystallization of boron nitride under high pressure and atmospheric pressure by using Ni-base metal solvent (2008)
  • Author(s): T. Taniguchi, Y. Kubota
  • Organizer: NDNC2008
  • Place of Presentation: Grand Hotel, 台北,台湾
  • Year and Date: 2008-05-27
• [Presentation] アルカリ金属系溶媒を用いたIII族窒化物結晶の高圧合成ど不純物制御 (2008)
  • Author(s): 谷口 尚、渡辺 賢司、中山 敦子
  • Organizer: 日本金属学会2008年春期(第142回)大会
  • Place of Presentation: 武蔵工業大学
  • Year and Date: 2008-03-28
• [Presentation] Nano-structured phosphorus-doped diamond arrays for field emitters (2008)
  • Author(s): T. Yamada, C. E. Nebel, S. Shikata
  • Organizer: 21th International Vacuum Nanoelectronics Conference
  • Place of Presentation: Wroctaw, ポーランド
• [Presentation] リン添加ダイヤモンドナノチップアレーからの電界電子放出特性 (2008)
  • Author(s): 山田貴壽, C. E. Nebel, 鹿田真一
  • Organizer: 電子情報通信学会研究会
  • Place of Presentation: 静岡大学,静岡県
• [Presentation] リン添加ダイヤモンドチップアレーからの電界電子放出特性 (2008)
  • Author(s): 山田貴壽, C. E. Nebel, 鹿田真一
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学,愛知県
• [Presentation] リン添加ダイヤモンドチップアレーからの電界電子放出 (2008)
  • Author(s): 山田貴壽, Christoph E. Nebel, 鹿田真一
  • Organizer: 第22回ダイヤモンドシンポジウム
  • Place of Presentation: 早稲田大学,東京都
• [Presentation] Fabrication of nano-whisker structures of P-doped diamond for field emitters (2008)
  • Author(s): T. Yamada, C. E. Nebel, S. SHikata
  • Organizer: 4th Vacuum and Surface Sciences Conference of Asia and Australia
  • Place of Presentation: 松江,島根県
• [Presentation] 六方晶窒化ホウ素の薄膜堆積と紫外発光特性 (2007)
  • Author(s): 津田 統、渡辺 賢司、谷口 尚
  • Organizer: 第21回ダイヤモンドシンポジウム
  • Place of Presentation: 長岡技術科学大学
  • Year and Date: 2007-11-22
• [Presentation] Ni系金属溶媒における立方晶窒化ホウ素の核発生と結晶成長 (2007)
  • Author(s): 窪田 陽一、福長 脩、谷口 尚
  • Organizer: 第48回高圧討論会
  • Place of Presentation: 倉吉パークスクエア
  • Year and Date: 2007-11-20
• [Presentation] Syllthesis of III-V nitride single crystals under high pressure by using belt-type high-pressure apparatus (2007)
  • Author(s): 谷口 尚
  • Organizer: 第21回高圧力の科学と技術のための国際会議(AIRAPT21)
  • Place of Presentation: Catania,イタリア
  • Year and Date: 2007-09-20
• [Presentation] Time-resolved photoluminescence of hexagonal boron nitride (2007)
  • Author(s): 渡辺 賢司、黒田 隆、谷口 尚、津田 統、窪田 陽一、神田 久生
  • Organizer: 第26回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖
  • Year and Date: 2007-07-04
• [Presentation] Hexagonal BN,cubic BN and AIN synthesis using a metal solvent under high pressures and high temperatures (2007)
  • Author(s): 窪田 陽一, 渡辺 賢司, 津田 統, 谷口 尚
  • Organizer: 第26回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖
  • Year and Date: 2007-07-04
• [Presentation] Synthesis of UV luminous boron nitride by thermal chemical vapor phase deposition (2007)
  • Author(s): 津田 統、渡辺 賢司, 谷口 尚
  • Organizer: 第26回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖
  • Year and Date: 2007-07-04
• [Presentation] Synthesis and characterization of doped boron nitride crystals (2007)
  • Author(s): T.Taniguchi, et.al
  • Organizer: New Diamond and Nano Carbons 2007 (NDNC2007)
  • Place of Presentation: 千里ライフサイエンスセンター、大阪
  • Year and Date: 2007-05-28
• [Presentation] アルカリ性溶媒による窒化ホウ素及び窒化アルミニウム結晶の高圧合成とその光学的特性評価 (2007)
  • Author(s): 谷口 尚, 渡辺 賢司, 津田 統, 窪田 陽一, 中山 敦子
  • Organizer: 第26回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖
  • Year and Date: 2007-05-28
• [Presentation] Synthesis and characterization of doped boron nitride crystals (2007)
  • Author(s): 谷口 尚, 渡辺 賢司, 津田 統, 窪田 陽一, 中山 敦子
  • Organizer: New Diamond and Nano Carbons 2007(NDNC2007)
  • Place of Presentation: 千里ライフサイエンスセンター
  • Year and Date: 2007-05-28
• [Presentation] Thme-resolved photoluminescence in band-edge region of hexagonal boron nitride (2007)
  • Author(s): 渡辺 賢司、黒田 隆、谷口 尚、津田 統、神田 久生
  • Organizer: New Diamond and Nano Carbons 2007(NDNC2007)
  • Place of Presentation: 千里ライフサイエンスセンター
  • Year and Date: 2007-05-28
• [Presentation] Synthesis of high-quality hexagonal boron nitride crystals at atmospheric pressure by using a Ni-Mo solvent (2007)
  • Author(s): 窪田 陽一, 渡辺 賢司, 津田 統, 谷口 尚
  • Organizer: New Diamond and Nano Carbons 2007(NDNC2007)
  • Place of Presentation: 千里ライフサイエンスセンター
  • Year and Date: 2007-05-28
• [Presentation] Thermal chemical vapor deposition of hexagnal boron nitride exhibiting free exciton luminescence at 215nm (2007)
  • Author(s): 津田 統、渡辺 賢司, 谷口 尚
  • Organizer: New Diamond and Nano Carbons 2007(NDNC2007)
  • Place of Presentation: 千里ライフサイエンスセンター
  • Year and Date: 2007-05-28
• [Book] 超の技術 (2009)
  • Author(s): 谷口尚
  • Total Pages: 8
  • Publisher: 無機マテリアル学会
• [Book] ホウ素・ホウ素化物および関連物質の基礎と応用 (2008)
  • Author(s): 谷口尚
  • Publisher: シーエムシー出版
• [Book] ホウ素・ホウ素化物および関連物質の基礎と応用 (2008)
  • Author(s): 谷口 尚
  • Total Pages: 10
  • Publisher: シーエムシー出版
• [Book] Wide Bandgap Semiconductors(348-351 chap.6.1.4) (2007)
  • Author(s): T.Taniguchi, K.Watanabe
  • Publisher: Springer
• [Book] Wide Bandgap Semiconductors (2007)
  • Author(s): T. Taniguchi, K. Watanabe
  • Publisher: Springer
• [Book] Wide Bandgap Semiconductors pp.348-351(chap.6.1.4) (2007)
  • Author(s): T. Taniguchi, K. Watanabe
  • Total Pages: 4
  • Publisher: Springer
• [Remarks] 六方晶窒化ホウ素遠紫外線発光デバイスで殺菌効果を確認 日刊工業新聞、化学工業日報 2010年10月27日記事
• [Remarks] 六方晶窒化ホウ素を用いた遠紫外線面発光素子の試作に成功-手のひらサイズの水銀レス高効率遠紫外発光素子(225 nm)日刊工業、科学、鉄鋼、日経産業2009年9月18日 記事
• [Patent(Industrial Property Rights)] 遠紫外高輝度発光する高純度六方晶窒化ホウ素単結晶とその製造方法ならびに前記単結晶からなる遠紫外高輝度発光素子とこの素子を使用した固体レーザ、および固体発光装置 (2011)
  • Inventor(s): 渡邊賢司/谷口尚/小泉聡/神田久生/片桐雅之/山田貴壽/ミロスネスラデク
  • Industrial Property Rights Holder: 潮田資勝
  • Acquisition Date: 2011-03-23
• [Patent(Industrial Property Rights)] 遠紫外高輝度発光する高純度六方晶窒化ホウ素単結晶粉末とその製造方法 (2011)
  • Inventor(s): 渡邊賢司/谷口尚/神田久生
  • Industrial Property Rights Holder: 潮田資勝
  • Acquisition Date: 2011-01-04
• [Patent(Industrial Property Rights)] 紫外線発光六方晶窒化ホウ素結晶体の製造方法 (2010)
  • Inventor(s): 谷口尚/渡邊賢司/窪田陽一/津田統
  • Industrial Property Rights Holder: 潮田資勝
  • Acquisition Date: 2010-10-12
• [Patent(Industrial Property Rights)] 紫外線発光六方晶窒化ホウ素結晶体の製造方法 (2010)
  • Inventor(s): 谷口尚/渡邊賢司/窪田陽一/津田統
  • Industrial Property Rights Holder: 物質・材料研究機構
  • Acquisition Date: 2010-10-12
  • Overseas
• [Patent(Industrial Property Rights)] 六方晶窒化ホウ素単結晶およびそれを用いた紫外線発光素子 (2009)
  • Inventor(s): 渡邊賢司,谷口尚
  • Industrial Property Rights Holder: 岸輝雄
  • Filing Date: 2009-03-17
• [Patent(Industrial Property Rights)] 高輝度紫外線発光六方晶窒化ホウ素単結晶とその製造方法及び高輝度紫外線発光素子 (2009)
  • Inventor(s): 谷口尚、渡邊賢司
  • Industrial Property Rights Holder: 潮田資勝
  • Acquisition Date: 2009-07-17
• [Patent(Industrial Property Rights)] 六方晶窒化ホウ素単結晶およびそれを用いた紫外線発光素子 (2009)
  • Inventor(s): 渡邊賢司, 谷口尚
  • Industrial Property Rights Holder: (独) 物質・材料研究機構
  • Industrial Property Number: 2009-064552
  • Filing Date: 2009-03-17
• [Patent(Industrial Property Rights)] 紫外線発光六方晶窒化ホウ素結晶体の製造方法 (2007)
  • Inventor(s): 谷口尚/窪田陽一/渡邊賢司
  • Industrial Property Rights Holder: 岸輝雄
  • Filing Date: 2007-05-24
• [Patent(Industrial Property Rights)] 紫外線発光六方晶窒化ホウ素結晶体の製造方法 (2007)
  • Inventor(s): 谷口尚/窪田陽一/渡辺賢
  • Industrial Property Rights Holder: 岸 輝雄
  • Industrial Property Number: 2007-137365
  • Filing Date: 2007-05-24