Study of Novel Silicon Heterojunction Solar Cells with Controlled Fixed Charge
| Project/Area Number |
19206001
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
KONAGAI Makoto Tokyo Institute of Technology, 大学院・理工学研究科, 教授 (40111653)
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| Co-Investigator(Kenkyū-buntansha) |
YAMADA Akira 東京工業大学, 大学院・理工学研究科, 教授 (40220363)
MIYAJIMA Shinsuke 東京工業大学, 大学院・理工学研究科, 助教 (90422526)
ABE Katsuya 信州大学, 工学部, 准教授 (70334498)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥48,620,000 (Direct Cost: ¥37,400,000、Indirect Cost: ¥11,220,000)
Fiscal Year 2009: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2008: ¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000)
Fiscal Year 2007: ¥21,840,000 (Direct Cost: ¥16,800,000、Indirect Cost: ¥5,040,000)
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| Keywords | 太陽光発電 / 太陽電池 / ヘテロ接合 / シリコン太陽電池 |
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| Research Abstract |
Novel Si heterojunction solar cells were proposed to improve the energy conversion efficiency of conventional Si solar cells. For p-type Si solar cells with a widegap n-type micorcystalline 3C-SiC as an emitter layer and with an amorphous AlO as a backside passivation layer, an efficiency of 16% was demonstrated for the first time in the world. Furthermore, very high efficiency of 18.5% has been achieved for a novel solar cell with a configuration of n-type microcrystalline Si/undoped-SiO/p-type Si wafer/p-type microcrystalline SiO back contact. Almost all research targets were met by FY2009.
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Report
(4 results)
Research Products
(27 results)
