| Project/Area Number |
19206003
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
MIKI Kazushi National Institute for Materials Science, ナノ有機センター, グループリーダー (30354335)
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| Co-Investigator(Kenkyū-buntansha) |
NITTO Ko'ichi 独立行政法人物質・材料研究機構, ナノ有機センター, 研究業務員 (20421414)
SAKAMOTO Kunihiro 独立行政法人産業技術総合研究所, エレクトロニクス研究部門, 主幹研究員 (50357109)
KAWABATA Shiro 独立行政法人産業技術総合研究所, ナノシステム研究部門, 主任研究員 (30356852)
FUKATSU Susumu 東京大学, 大学院・総合文化研究科, 教授 (60199164)
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| Project Period (FY) |
2007 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥40,430,000 (Direct Cost: ¥31,100,000、Indirect Cost: ¥9,330,000)
Fiscal Year 2010: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2009: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2008: ¥13,390,000 (Direct Cost: ¥10,300,000、Indirect Cost: ¥3,090,000)
Fiscal Year 2007: ¥14,950,000 (Direct Cost: ¥11,500,000、Indirect Cost: ¥3,450,000)
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| Keywords | 結晶工学 / 結晶成長 / 半導体物性 / 量子コンピュータ / MBE・エピタキシャル / MBE・エピタキシャル成長 |
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| Research Abstract |
A new technology that forms a δ layer with various elements dopants in the silicon, by combining two methods to dope elements with usage of characteristic surface structures and to move the doping atoms into substitutional sites to activate them by using a short laser annealing, was advocated. It was demonstrated that by choosing the bismuth atomic nanolines on the Si(001) surface as doping source, Bi atoms in the nanoline was partially changed into Er atoms, and both elements was doped into a δ layer in silicon crystal. Hybrid laser annealing, i.e., a serial combination of laser exposure and furnace annealing, is demonstrated to activate Bi donors that are δ-doped in Si. The photoluminescence reveals that the dense Bi atoms are activated so efficiently that an impurity band develops upon rapid radiation heating of the focused area close to the melting point of Si. The unintentional defects that are created thereby can be totally eliminated by subsequent furnace annealing at 390℃. The unintentional defects were characterized to be the G-centers and they get a lot of attention due to new photonic material for laser application. We propose a new method of creating G-centers in a surface region with highly dense carbon atoms of up to 4×10^<19>cm^<-3>, above the solubility limit of carbon atoms in silicon crystal.
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