Control of structure and property in new low dimensional structures on Si nanomembrane
| Project/Area Number |
19206005
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
FUJIKAWA Yasunori Tohoku University, 金属材料研究所, 准教授 (70312642)
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| Co-Investigator(Kenkyū-buntansha) |
AL-MAHBOOB A 東北大学, 原子分子材料科学高等研究機構, 助教 (10455850)
小野 崇人 東北大学, 工学研究科, 准教授 (90282095)
秋山 琴音 東北大学, 金属材料研究所, 助教 (60447175)
CHEN Mingwei 東北大学, 金属材料研究所, 教授 (20372310)
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| Co-Investigator(Renkei-kenkyūsha) |
ONO Takahito 東北大学, 工学研究科, 教授 (90282095)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥43,160,000 (Direct Cost: ¥33,200,000、Indirect Cost: ¥9,960,000)
Fiscal Year 2009: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2008: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2007: ¥33,280,000 (Direct Cost: ¥25,600,000、Indirect Cost: ¥7,680,000)
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| Keywords | 走査プローブ顕微鏡 / 低次元電気伝導 / 薄膜成長 / 表面・界面物性 |
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| Research Abstract |
GaN has been integrated on Si(001) via Si(111)-SOI structure by MBE, demonstrating the validity of symmetry conversion via Si(111)-SOI for epitaxial growth with symmetry mismatch. Transport properties of various low-dimensional systems have been also investigated, finding out that the conductivity of Si(111)-SOI is strongly surface dependent by scanning tunneling microscopy and 4-probe measurements.
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Report
(4 results)
Research Products
(37 results)
