| Budget Amount *help |
¥49,140,000 (Direct Cost: ¥37,800,000、Indirect Cost: ¥11,340,000)
Fiscal Year 2010: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2009: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2008: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
Fiscal Year 2007: ¥26,650,000 (Direct Cost: ¥20,500,000、Indirect Cost: ¥6,150,000)
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| Research Abstract |
We have succeeded in fabricating high-quality GaAs/AlGaAs waveguiding QPM wavelength conversion devices based on the sublattice reversal epitaxy technique, and have achieved the lowest propagation loss of 2.7 dB/cm (GaAs waveguide @1.55 μm) and the highest SHG conversion efficiency of 34 %/W (2.96-mm-long Al0.5Ga0.5As waveguide @1.55 μm fundamental). Low-temperature MBE regrowth is essential for this achievement. Formation of (111)A dislocations and spatial compositional modulation should be suppressed in order to achieve further improvements. We have also proposed novel high-performance AlGaAs waveguiding devices incorporating new phase matching techniques (HIC-BPM, ZQPM and TQPM).
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